Zobrazeno 1 - 10
of 69
pro vyhledávání: '"G. Gaudiello"'
Transmission Electron Microscopy Sample Preparation By Design Based Recipe Writing in a DBFIB Part 2
Autor:
Marc A. Bergendahl, M. Biedrzycki, J. Hager, K. Nguyen, M. Persala, J. Arjavac, Brad Austin, Carol Boye, S. Shaar, Mary Breton, Michael Rizzolo, John G. Gaudiello, Sean Teehan, Shravan Matham, B. Cilingiroglu, James J. Demarest
Publikováno v:
International Symposium for Testing and Failure Analysis.
Demarest et al. concluded in their previous report that a ten times improvement in placement accuracy was required to enable automated transmission electron microscopy (TEM) sample preparation, and wafer alignment by GDS coordinates demonstrated a fa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4ca71e6c1294b3cd26decf2043970581
https://doi.org/10.31399/asm.cp.istfa2019p0470
https://doi.org/10.31399/asm.cp.istfa2019p0470
Autor:
Devendra K. Sadana, Brock Mendoza, John G. Gaudiello, Ankit Jain, Shravan Matham, Heungsoo Choi, Sean Teehan, Curtis Durfee, Martin Plihal, Stephen W. Bedell
Publikováno v:
2019 30th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC).
Historically, haze metrology on KLA-Tencor Surfscan® unpatterned wafer inspection systems is the preferred inline non-destructive method for ascertaining crystal quality of epitaxial deposited films. However, this metrology is limited to unpatterned
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::71db54515d5ca099eecae45f66f9eda1
https://doi.org/10.1109/asmc.2019.8791801
https://doi.org/10.1109/asmc.2019.8791801
Autor:
Chi-Chun Liu, Frougier Julien, Aron Cepler, Matthew Sendelbach, Nicolas Loubet, Dexin Kong, Daniel Schmidt, Gangadhara Raja Muthinti, Soon-Cheon Seo, Mary Breton, Veeraraghavan S. Basker, Pietro Montanini, Gilad Barak, Robinhsinkuo Chao, Itzik Kaplan, Susan Ng-Emans, John G. Gaudiello
Publikováno v:
Metrology, Inspection, and Process Control for Microlithography XXXII.
As device scaling continues, controlling defect densities on the wafer becomes essential for high volume manufacturing (HVM). One type of defect, the non-selective SiGe nodule, becomes more difficult to control during SiGe epitaxy (EPI) growth for p-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b6cb854098e9ca2522cd164324bfc146
https://doi.org/10.1117/12.2297377
https://doi.org/10.1117/12.2297377
Autor:
Nelson Felix, Spyridon Skordas, Rohit Galatage, Junli Wang, Dinesh Gupta, Xin Miao, Deok-Hyung Lee, R. Divakaruni, John C. Arnold, Vamsi Paruchuri, Ohyun Kwon, Adra Carr, Seng Luan Lee, Soon-Cheon Seo, T. Gow, James Chingwei Li, Muthumanickam Sankarapandian, Y. Xu, Zuoguang Liu, D. Corliss, Stuart A. Sieg, Robert C. Wong, Chun Wing Yeung, Albert M. Young, Jingyun Zhang, Jeffrey C. Shearer, Huiming Bu, C. Labelle, Zhenxing Bi, Bassem Hamieh, M. Guillom, Andreas Knorr, Tenko Yamashita, Jae-Yoon Yoo, D. Brown, Peng Xu, Robin Chao, Dexin Kong, Terence B. Hook, P. Oldiges, T. Wu, Shogo Mochizuki, Young-Kwan Park, W. Xu, Raja Muthinti, S. Lian, Ruqiang Bao, S. Kanakasabapathy, Myung-Hee Na, Richard A. Conti, Frougier Julien, Robert R. Robison, Nicolas Loubet, Yann Mignot, Theodorus E. Standaert, Hemanth Jagannathan, Ho Ju Song, Pietro Montanini, Myounggon Kang, John G. Gaudiello, Mukesh Khare, Abraham Arceo, Su Chen Fan, Andrew M. Greene
Publikováno v:
2017 Symposium on VLSI Technology.
In this paper, for the first time we demonstrate that horizontally stacked gate-all-around (GAA) Nanosheet structure is a good candidate for the replacement of FinFET at the 5nm technology node and beyond. It offers increased W eff per active footpri
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8172c77d8489643bbaac20dc37532850
https://doi.org/10.23919/vlsit.2017.7998183
https://doi.org/10.23919/vlsit.2017.7998183
Autor:
Michael Shifrin, Robin Chao, Gangadhara Raja Muthinti, Matthew Sendelbach, Wei Ti Lee, Abraham Arceo de la Pena, Ronen Urenski, Susan Emans, Jacques Simon, John G. Gaudiello, Mary Breton, Aron Cepler, Yoav Etzioni
Publikováno v:
Metrology, Inspection, and Process Control for Microlithography XXXI.
Electrical test measurement in the back-end of line (BEOL) is crucial for wafer and die sorting as well as comparing intended process splits. Any in-line, nondestructive technique in the process flow to accurately predict these measurements can signi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::81e3b8b681731177f89ff44a6321fdb8
https://doi.org/10.1117/12.2261091
https://doi.org/10.1117/12.2261091
Publikováno v:
SPIE Proceedings.
Traditionally, the total measurement uncertainty (TMU) of overlay metrology focuses on dynamic precision, toolinduced-shift, and matching, while rarely examining inaccuracy. However, some researchers have recently shown that measurement inaccuracy ca
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::50c57d96d21216ba8e7ff0b36e9bcf1a
https://doi.org/10.1117/12.2260007
https://doi.org/10.1117/12.2260007
Autor:
P. Gin, Jody A. Fronheiser, Alexander Reznicek, B. Lherron, John G. Gaudiello, K. M. Matney, Paul Ryan, John Wall, Brock Mendoza, Nicolas Loubet, M. Wormington
Publikováno v:
2016 27th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC).
We describe the use of high resolution X-ray diffraction (HRXRD) for inline metrology of strain relaxed buffer (SRB) layers and epitaxial layers grown thereon. The use of SRBs as a virtual substrate is a promising candidate for advanced CMOS logic at
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::49e667cdbd5df4dd692eec620570ee78
https://doi.org/10.1109/asmc.2016.7491101
https://doi.org/10.1109/asmc.2016.7491101
Autor:
Peter Gin, Matthew Sendelbach, Robin Chao, Cornel Bozdog, Matthew Wormington, Tom Cardinal, Fee li Le, Brock Mendoza, Stuart A. Sieg, Raja Muthinti, John G. Gaudiello, Florence Nelson, Aron Cepler, Sivananda K. Kanakasabapathy, Shay Wolfling, B. Lherron, Mary Breton, Eric R. Miller, Abraham Arceo de la Pena, James J. Demarest, Nelson Felix
Publikováno v:
SPIE Proceedings.
Self-Aligned Quadruple Patterning (SAQP) is a promising technique extending the 193-nm lithography to manufacture structures that are 20nm half pitch or smaller. This process adopts multiple sidewall spacer image transfers to split a rather relaxed d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::97a1983109528f300cb1f79a7604bfdc
https://doi.org/10.1117/12.2220601
https://doi.org/10.1117/12.2220601
Autor:
Shay Wolfling, Oded Cohen, John A. Ott, Raja Muthinti, Nelson Felix, Cornel Bozdog, Michael A. Guillorn, Aron Cepler, P. Lund, Nicolas Loubet, Mark Klare, John G. Gaudiello, Robin Chao, Matthew Sendelbach
Publikováno v:
SPIE Proceedings.
Gate-all-around (GAA) nanowire (NW) devices have long been acknowledged as the ultimate device from an electrostatic scaling point of view. The GAA architecture offers improved short channel effect (SCE) immunity compared to single and double gate pl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0769f233efc5ba3d9af779d7ae07f459
https://doi.org/10.1117/12.2220379
https://doi.org/10.1117/12.2220379
Autor:
Yu Zhu, John G. Gaudiello, Juntao Li, L. Tai, J. Strane, L. Jiang, A. Grill, R. Conti, John Bruley, M. Belyansky, James J. Demarest, S. Metha
Publikováno v:
Microscopy and Microanalysis. 23:1462-1463
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4fe4974d4c643f2e340a03c3b648f70e
https://doi.org/10.1017/s1431927617007978
https://doi.org/10.1017/s1431927617007978