Zobrazeno 1 - 10
of 87
pro vyhledávání: '"G. Gammie"'
Publikováno v:
ITC
High levels of integration have complicated the entire IC manufacturing process. Crucial steps such as ramp to volume production and yield improvement techniques are being challenged. In this paper, a diagnostic system that has been developed and dep
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6a48df39ed6e39359c4ef810f0335cfb
https://doi.org/10.1109/test.1999.805619
https://doi.org/10.1109/test.1999.805619
Publikováno v:
Proceedings of IEEE International Electron Devices Meeting.
Microelectronic field emission arrays are used to develop a directly modulated cathode for microwave device applications. Results from dc and rf measurements are presented, indicating that an f/sub T/=1 GHz may be attainable under optimal conditions
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b5763c3348219834b5b46f81587f214b
https://doi.org/10.1109/iedm.1993.347204
https://doi.org/10.1109/iedm.1993.347204
Publikováno v:
9th International Vacuum Microelectronics Conference.
Volcano emitters with gate dimensions of 6, 9, 15, 25, and 50 /spl mu/m have been processed using chemical mechanical polishing (CMP) for the removal of the emitter material and the gate-to-emitter dielectric on top of the gate plateau. Devices were
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ddcfbc9602e95e67255efab378503958
https://doi.org/10.1109/ivmc.1996.601848
https://doi.org/10.1109/ivmc.1996.601848
Autor:
R. Rao, J. Hubacek, R. Nowicki, W. Urbanek, G. Gammie, S. Skala, H. Busta, J.E. Pogemiller, D. Devine
Publikováno v:
Proceedings of International Electron Devices Meeting.
Individual and groups of 3/spl times/3 and 10/spl times/10 gated volcano-shaped field emitters have been processed with gate dimensions of 4, 8, 14, 25 and 50 /spl mu/m and gate-to-emitter rim distances of 1.0 and 0.25 /spl mu/m. The 0.25 /spl mu/m d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ab913d88d0ee3cb685b3661e09be40c0
https://doi.org/10.1109/iedm.1995.499225
https://doi.org/10.1109/iedm.1995.499225
Akademický článek
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Publikováno v:
MRS Proceedings. 345
High luminance (brightness) thin-film phosphor materials have potential use in a variety of applications including heads-up, helmet-mounted, and electroluminescent displays, as well as in emerging flat-panel displays based on field emitter technology
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f60014163dde9d6125259eb72915b2c0
https://doi.org/10.1557/proc-345-281
https://doi.org/10.1557/proc-345-281
Conference
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Autor:
J. A. Emerton, J. G. Gammie
Publikováno v:
Vetus Testamentum. 43:286
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e2cd8d52d125390cc6994f3f30552bbe
https://doi.org/10.2307/1519378
https://doi.org/10.2307/1519378
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 9:1027
Scanning tunneling microscopy (STM) has been used to study the atomic and charge‐density wave (CDW) structure of the surface of the trichalcogenides NbSe3 and o‐TaS3. Atomic images of NbSe3 suggest the presence of an adatom on untreated surfaces
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::51202d6096304b0537329c9449410b5b
https://doi.org/10.1116/1.585252
https://doi.org/10.1116/1.585252
Akademický článek
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