Zobrazeno 1 - 10
of 32
pro vyhledávání: '"G. Galibert"'
Publikováno v:
Thin Solid Films. 218:259-273
In spite of its eventual use in very-large-scale integration techniques, silver photodissolution in amorphous chalcogenide thin films still remains an ill-understood phenomenon. In this paper we investigate the main theories reported through the use
Publikováno v:
Materials Science and Engineering: B. 13:309-317
Silver dissolution in vitreous GeSex thin films was investigated by secondary ion mass spectrometry (SIMS) measurements with 109Ag and 107Ag isotopes. Three compositions were used: x = 3, 4.5 and 5.5. After dissolution of the first 107Ag layer evapor
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 63:462-472
Ag photodissolution profile in amorphous GeSe x was investigated by secondary ion mass spectroscopy (SIMS), by Rutherford backscattering (RBS) and also by scanning electron microscopy (SEM). From SIMS measurements, Ag was found to exhibit generally a
Publikováno v:
Journal of Non-Crystalline Solids. 116:63-72
Optical reflectivity measurements on amorphous GeSe3 obtained by flash evaporation and photodoped with Ag have been carried out. Cooling the sample during Ag evaporation avoids Ag diffusion but when the sample returns to room temperature photodissolu
Publikováno v:
Journal de Physique. 51:2449-2463
This work compares the Ag photodissolution in the GeSe x glassy thin films elaborated from flash evaporation and from Plasma Enhanced Chemical Vapor Deposition (PECVD): the investigated composition range x runs from 3 to 5.5. The manufacturing of the
Publikováno v:
Molecular and cellular probes. 4(5)
PCR experiments using rRNA sequence-specific oligonucleotides were used to detect Plasmodium falciparum DNA and Plasmodium vivax DNA from cultures and blood samples.
Publikováno v:
Journal of Crystal Growth. 28:109-116
The epitaxial growth of ZnSe on (111) and (100) oriented substrates of GaAs, using an open (HCl-H 2 ) transport process is described. Various factors are discussed which are found to affect the epitaxial growth: the degree of supersaturation and the
Publikováno v:
Physica Status Solidi (a). 107:273-279
The photodoping of Ag in thin layers of amorphous GeSe3 semiconductors is studied according to the intensity and wavelength of the radiation used. This study is based on the electrical resistance variation of the Ag layer deposited above (or undernea
Publikováno v:
Physica Status Solidi (b). 49:257-269
An investigation is made of the variation of the attenuation coefficient for shear and longitudinal ultrasonic waves which propagate through monocrystalline p-type Gasb. The study was carried out for frequencies ranging from 0.5 to 1 GHz and in a ran
Publikováno v:
Physica Status Solidi (a). 15:169-180
The influence of the phonon–phonon interaction on the variation of the attenuation coefficient of longitudinal and transversal ultrasonic waves for the frequency of 750 MHz propagating in p-type single crystals of pure GaSb has been studied. Single