Zobrazeno 1 - 10
of 51
pro vyhledávání: '"G. G. Yakushcheva"'
Publikováno v:
AIP Advances, Vol 9, Iss 1, Pp 015310-015310-6 (2019)
The aim of the research was the studying of the topological insulators Bi2-xSbxTe3-ySey thin films with the different thickness and chemical composition. The obtained time dependences of terahertz radiation have indicated that the generation of THz w
Externí odkaz:
https://doaj.org/article/ea35e7a5a4964e6c8f020fe7c4a558e3
Autor:
Galiya Kh. Kitaeva, K. A. Kuznetsov, D. A. Safronenkov, Alexander A. Ezhov, G. G. Yakushcheva, P. I. Kuznetsov
Publikováno v:
2020 7th All-Russian Microwave Conference (RMC).
The paper presents the results of a study of terahertz radiating antennas made on the base of island films of topological insulators of bismuth and antimony chalcogenides. It has been shown experimentally that a topological insulator film only a few
Autor:
G. G. Yakushcheva, E A Savelyev, Alexey Temiryasev, P. I. Kuznetsov, V.A. Jitov, Vasiliy O. Yapaskurt, Dmitriy Sudas, Vasiliy Shcherbakov, Leonid Zakharov
Publikováno v:
Lithuanian Journal of Physics. 59
Metal organic chemical vapour deposition (MOCVD) technology is adapted for the deposition of thin zinc and bismuth chalcogenides films on the surface of silica optical fibres with short tapered sections. Growth runs were carried out in a special tubu
Autor:
Vasiliy O. Yapaskurt, B.S. Shchamkhalova, G. G. Yakushcheva, V.E. Sizov, V.A. Jitov, P. I. Kuznetsov, A. G. Temiryazev
Publikováno v:
Journal of Crystal Growth. 483:216-222
We present a first study of films of the quaternary Bi2−xSbxTe3−ySey solid solutions on (0 0 0 1) sapphire substrates grown by atmospheric pressure MOVPE. Trimethylbismuth, trimethylantimony, diisopropylselenide and diethyltelluride were used as
Autor:
V.E. Sizov, B.S. Shchamkhalova, V. D. Shcherbakov, G. G. Yakushcheva, V.A. Jitov, P. I. Kuznetsov, Vasiliy O. Yapaskurt, V. A. Luzanov
Publikováno v:
Journal of Crystal Growth. 471:1-7
The films of Sb-Te system have been deposited by MOVPE on (0 0 0 1) Al2O3 substrates with thin ZnTe buffer layers at different temperatures and Te/Sb ratios in the vapor phase. X-ray diffractometry, SEM microscopy, Raman and EDX spectroscopy were use
Autor:
Vasiliy O. Yapaskurt, P. I. Kuznetsov, V.A. Jitov, V. A. Luzanov, V. D. Shcherbakov, G. G. Yakushcheva, B.S. Shchamkhalova
Publikováno v:
Journal of Crystal Growth. 455:122-128
We have deposited films of Bi-Te system by atmospheric pressure MOVPE on (0001) Al 2 O 3 substrates with thin ZnTe or thick GaN buffer layers at different temperatures and Te/Bi ratio in the vapor phase. As-grown films were studied by X-ray diffracto
Autor:
Vasily Yapaskyrt, E A Savelyev, G. G. Yakushcheva, P. I. Kuznetsov, Dmitry Sudas, Vasily Sherbakov
Publikováno v:
2019 IEEE 14th Nanotechnology Materials and Devices Conference (NMDC).
Nanolayers of MoSe 2 , NiO, VO 2 , Bi 2 Se 3 , Bi 2 Te 3 , Sb 2 Te 3 compounds were fabricated using MOCVD technology. They were grown directly or mechanically deposited as a mixture with the polymer on the surface of tapered section of fibers. Taper
Autor:
D. A. Safronenkov, G. Kh. Kitaeva, P. I. Kuznetsov, A. G. Temiryazev, G. G. Yakushcheva, K. A. Kuznetsov
Publikováno v:
2019 44th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz).
Using time-domain spectroscopy we studied the topological insulators, Bi 2-x Sb x Te 3-y Se y thin films of different thickness and chemical composition. The obtained temporal dependences of terahertz pulses show that generation of THz radiation is m
Publikováno v:
Journal of Physics: Conference Series. 1851:012018
Nanoparticles of NiS (amorphous α and crystalline β phases), Ni3S2 and Ni were obtained by passing H2S through a solution of NiSO4•7H2O followed by drying or annealing of washed precipitate in hydrogen or nitrogen atmospheres. The synthesized mat
Autor:
P. I. Kuznetsov, G. G. Yakushcheva, B.S. Shchamkhalova, V.A. Jitov, A. G. Temiryazev, V. A. Luzanov
Publikováno v:
Journal of Crystal Growth. 433:114-121
We studied the metalorganic vapor phase epitaxy (MOVPE) of ( Bi 1 − x Sb x ) 2 Se 3 solid solution films with a different Sb content on (001) Al 2 O 3 substrates with thin ZnSe buffer layer in the range of temperatures 250–480 °C. As-grown films