Zobrazeno 1 - 4
of 4
pro vyhledávání: '"G. G. Mnatsakanyan"'
Autor:
S. I. Petrosyan, R. K. Hovsepyan, Natella Aghamalyan, G. G. Mnatsakanyan, E. A. Kafadaryan, A. A. Arakelyan
Publikováno v:
Journal of Contemporary Physics (Armenian Academy of Sciences). 55:157-163
The noise characteristics of field-effect transistors based on ZnO: Li films and obtained by the diffusion technology are studied. The results of an experimental study of the noise characteristics of the drain current are presented, namely, the Rando
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ff47299bf0c8acad00e69b4bc9871a64
https://doi.org/10.3103/s1068337220020127
https://doi.org/10.3103/s1068337220020127
Autor:
E. A. Kafadaryan, R. K. Hovsepyan, Natella Aghamalyan, A. A. Arakelyan, S. I. Petrosyan, G. G. Mnatsakanyan, G. R. Badalyan
Publikováno v:
Journal of Contemporary Physics (Armenian Academy of Sciences). 53:358-366
A technique for local diffusion doping of the certain areas of the ZnO film of donor (Ga) and acceptor (Li) impurities has been developed to produce the films with the topological pattern of doping regions. The diffusion process, electrophysical and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bd3950b80f25cc8cc51e4ceb632ab36a
https://doi.org/10.3103/s1068337218040114
https://doi.org/10.3103/s1068337218040114
Autor:
L M, Fonshtein, G G, Mnatsakanyan
Publikováno v:
Soviet genetics. 7(10)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::932694816fb88f73bce891c1a3da4b58
https://pubmed.ncbi.nlm.nih.gov/4596369
https://pubmed.ncbi.nlm.nih.gov/4596369
Publikováno v:
Soviet genetics. 8(2)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::aef1e49062a704b4b5d001b97db2ad9b
https://pubmed.ncbi.nlm.nih.gov/4602913
https://pubmed.ncbi.nlm.nih.gov/4602913