Zobrazeno 1 - 10
of 21
pro vyhledávání: '"G. G. Konovalov"'
Autor:
E. V. Kunitsyna, A. A. Pivovarova, I. A. Andreev, G. G. Konovalov, E. V. Ivanov, N. D. Il’inskaya, Yu. P. Yakovlev
Publikováno v:
Semiconductors. 55:601-607
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::028ab94a715b6266ad81cba6b50cd82f
https://doi.org/10.1134/s1063782621070083
https://doi.org/10.1134/s1063782621070083
Autor:
A. A. Pivovarova, Yu. P. Yakovlev, E. V. Ivanov, G. G. Konovalov, I. A. Andreev, E.V. Kunitsyna, N. D. Il’inskaya
Publikováno v:
Semiconductors. 52:1215-1220
GaSb/GaAlAsSb uncooled photodiodes for the 1.1–1.85 μm spectral range are fabricated and studied. A unique method for the growth of GaSb from lead solution-melts makes it possible to obtain a low carrier concentration in the active region: n = 2
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::29a8c82cb0998e7f3f6a251f0cd406b7
https://doi.org/10.1134/s1063782618090099
https://doi.org/10.1134/s1063782618090099
Autor:
Maya P. Mikhailova, L. V. Danilov, Yu. P. Yakovlev, B. V. Pushnyi, R. V. Levin, E.V. Kunitsyna, G. G. Konovalov, I. A. Andreev, N. D. Il’inskaya, E. V. Ivanov
Publikováno v:
Semiconductors. 52:1037-1042
Significant photocurrent/photoconductivity amplification is observed at low reverse biases in a type-II n-GaSb/InAs/p-GaSb heterostructure with a single quantum well (QW), grown by metal-organic vapor phase epitaxy. A sharp increase in the photocurre
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f207cdb23bdf65fef32957c4c4c305f5
https://doi.org/10.1134/s1063782618080146
https://doi.org/10.1134/s1063782618080146
Autor:
R. V. Levin, L. V. Danilov, G. G. Konovalov, I. A. Andreev, G. G. Zegrya, B. V. Pushnyi, Maya P. Mikhailova, E. V. Ivanov
Publikováno v:
Semiconductors. 52:493-496
n-GaSb/n-InAs/p-GaSb heterostructure with a single InAs QW was grown for the first time by MOVPE. Photocurrent spectra were obtained at reverse bias in the range from 0 to 0.8 V. It was shown that the photocurrent increases nonlinearly. The maximum o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2165ec4f98149a4f993bd62548793aae
https://doi.org/10.1134/s1063782618040115
https://doi.org/10.1134/s1063782618040115
Publikováno v:
Acta Biomedica Scientifica, Vol 8, Iss 3, Pp 14-24 (2023)
The review presents evidence of the participation of low-density lipoproteins (LDL) modified by low molecular weight dicarbonyl compounds formed during freeradical oxidation of lipids (malondialdehyde) and carbohydrates in the development of endothel
Externí odkaz:
https://doaj.org/article/4ea45fa6c78e4080adf44dc54d843ed7
Publikováno v:
Semiconductors. 50:1403-1407
A new method is used to raise the spectral sensitivity of photodiodes based on GaSb/GaInAsSb/GaAlAsSb heterostructures for the spectral range 1.1–2.4 μm. It is shown that, with a profile formed as pits on the metal-free unilluminated rear surface
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5ee130db5a381924cf85abf35c45e2e8
https://doi.org/10.1134/s1063782616100158
https://doi.org/10.1134/s1063782616100158
Autor:
V. V. Sherstnev, N. D. Il’inskaya, A. A. Pivovarova, O. Yu. Serebrennikova, I. A. Andreev, E. V. Kunitsyna, G. G. Konovalov, Yu. P. Yakovlev
Publikováno v:
Semiconductors. 49:1671-1677
The results of a study aimed at the development of high-efficiency photodiodes for the spectral range 1.5–3.8 μm with various photosensitive-area diameters in the range 0.1–2.0 mm are reported. Epitaxial techniques for the growth of InAs/InAsSbP
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::351046dacf75c6a82444825cd90c5337
https://doi.org/10.1134/s1063782615120027
https://doi.org/10.1134/s1063782615120027
Autor:
Vladislav V. Dudelev, G. G. Konovalov, Grigorii S. Sokolovskii, Yu. P. Yakovlev, E. V. Kunitsyna, N. D. Ilynskaya, O. Yu. Serebrennikova, I. A. Andreev
Publikováno v:
Semiconductors. 47:1103-1109
High-speed p-i-n photodiodes for the spectral range of 1.2–2.4 μm are fabricated for the first time based on a GaAs/GaInAsSb/GaAlAsSb heterostructure with separated sensitive-(50 μm in diameter) and contact mesas, which are connected by a bridge
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::649acb28bc27fb0ee2a92bbfb253b74b
https://doi.org/10.1134/s1063782613080046
https://doi.org/10.1134/s1063782613080046
Autor:
Yu. P. Yakovlev, Alice Hospodková, E. Hulicius, Y. Pangrac, M. P. Mikhailova, Evgenii Ivanov, E. A. Grebentshikova, I. A. Andreev, G. G. Konovalov
Publikováno v:
Semiconductors. 47:1041-1045
The luminescence and photoelectric properties of heterostructures with a deep Al(As)Sb/InAsSb/Al(As)Sb quantum well grown on n-GaSb substrates by metalorganic vapor-phase epitaxy are investigated. Intense superlinear luminescence and increased optica
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::81831fe5a6f8f78383133b869cab0968
https://doi.org/10.1134/s1063782613080137
https://doi.org/10.1134/s1063782613080137
Autor:
V. V. Sherstnev, G. G. Konovalov, Yu. P. Yakovlev, I. A. Andreev, A. N. Imenkov, D. A. Starostenko, E. A. Grebenshchikova
Publikováno v:
Semiconductors. 47:701-706
InAs/InAs0.88Sb0.12/InAs0.50Sb0.20P0.30 heterostructure photodiodes operating at room temperature in the spectral range 1–4.8 μm are developed. It is shown that the formation of a curvilinear reflecting surface constituted by a number of hemispher
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f7455d57a983ddc4586c32343a5b49e6
https://doi.org/10.1134/s1063782613050114
https://doi.org/10.1134/s1063782613050114