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pro vyhledávání: '"G. G. Fischer"'
Publikováno v:
Silicon-Germanium Heterojunction Bipolar Transistors for Mm-wave Systems Technology, Modeling and Circuit Applications ISBN: 9781003339519
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::adaebd5e63207a30bfa6d8a1134a2f18
https://doi.org/10.1201/9781003339519-6
https://doi.org/10.1201/9781003339519-6
Publikováno v:
2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS).
Publikováno v:
Microelectronics Reliability. 92:143-148
In the last decade it has become increasingly popular to use germanium enriched silicon in modern field effect transistors (FET) due to the higher intrinsic mobility of both holes and electrons in SiGe as compared to Si. Whether used in the source/dr
Publikováno v:
2019 IEEE 26th International Symposium on Physical and Failure Analysis of Integrated Circuits (IPFA).
This publication presents Electro-Optical Frequency Mapping (EOFM) on lateral and vertical bipolar junction transistors. The acquired EOFM measurements are used to characterize the different operation modes of a parasitic bipolar junction transistor,
Publikováno v:
Microelectronics Reliability. 106:113583
Electro-optical frequency mapping (EOFM) is sensitive to carrier densities in electronic devices. Here, parametric measurements of FET and bipolar transistor structures have been performed with EOFM. The Metal-Insulator-Semiconductor (MIS) system of
Autor:
T O Kaé, M A P Vilela, W G G Fischer, Daniel Brito de Araujo, U L de Oliveira Filho, R de Almeida
Publikováno v:
Lupus. 26:1112-1114
Any of the various layers of the eye may suffer injury in systemic lupus erythematosus, ranging from keratoconjunctivitis sicca to retinopathy and optic neuritis. Rheumatologists must always be aware of ocular involvement in those patients since rapi
Publikováno v:
2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA).
In modern IC technologies, it is very common to use germanium enriched silicon in order to increase field effect transistor (FET) channel carrier mobility for high performance. The germanium content modifies the effective semiconductor band gap EG. T
Publikováno v:
IEEE Transactions on Electron Devices. 62:2384-2389
In this paper, we develop a correlated noise model for bipolar transistors from an accurate nonquasi-static model. The proposed noise model includes the signal delay through base-collector space-charge region and is implemented using four extra nodes
Autor:
Grazia Sasso, G. G. Fischer
Publikováno v:
Microelectronics Reliability. 55:498-507
The main reliability issue in SiGe heterojunction bipolar transistors (HBT) is the cumulative base current degradation which they may experience during circuit operation. This continuous transistor ageing is the result of the interplay between oxide
Autor:
Bernd Heinemann, Dirk Manger, Klaus Aufinger, Josef Bock, C. Wipf, Thomas Meister, Holger Rücker, Steffen Marschmeyer, Sabine Boguth, Rudolf Lachner, Herbert Knapp, Andreas Pribil, R. Barth, Jonas Wursthorn, G. G. Fischer, A. Fox, Wolfgang Liebl
Publikováno v:
IEEE Electron Device Letters. 36:642-644
The high-frequency performance of a novel SiGe heterojunction bipolar transistor (HBT) module with monocrystalline base link is investigated in an industrial 0.13- $\mu \text{m}$ BiCMOS environment. The main feature of this new HBT module is a signif