Zobrazeno 1 - 10
of 108
pro vyhledávání: '"G. Frankowsky"'
Publikováno v:
Materials Science and Engineering: B. 43:201-206
We have studied the optical gain spectra in GalnN/GaN and GaN/AlGaN double heterostructures and quantum wells at room temperature employing the stripe-excitation method. We compare the results with data for other III–V semiconductors. The optical g
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0f2b28b3fd4e6cfac7aaa2845c261bc6
https://doi.org/10.1016/s0921-5107(96)01861-2
https://doi.org/10.1016/s0921-5107(96)01861-2
Publikováno v:
Journal of Crystal Growth. 145:242-248
Selective area growth of GaInAs has been performed by low pressure metalorganic vapor phase epitaxy (MOVPE) on SiO 2 -masked InP substrates. The growth rate and composition variations induced by the mask pattern have been evaluated by cathodoluminesc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::85ae35efa5680580732ea6465f59bc44
https://doi.org/10.1016/0022-0248(94)91058-8
https://doi.org/10.1016/0022-0248(94)91058-8
Publikováno v:
Superlattices and Microstructures. 7:309-313
Differential electrotransmission measurements on InGaAs/InP and InGaAs/InGaAsP multi quantum well structures (MQW) with well widths 8,10 and 20 nm with InGaAsP barriers of E g (77 K ) = 1.2 eV are presented. The differential electrotransmission spect
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::831cb6eb2e0b266951aefea3ec805daa
https://doi.org/10.1016/0749-6036(90)90215-s
https://doi.org/10.1016/0749-6036(90)90215-s
Publikováno v:
Applied Physics Letters. 68:3746-3748
By optical gain spectroscopy we have studied the fundamental laser properties of GaInN/GaN heterostructures grown on sapphire. Utilizing the stripe excitation method we have measured optical gain spectra at room temperature. Due to the low symmetry o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::50a79f3763e02222b12e346382844d62
https://doi.org/10.1063/1.115993
https://doi.org/10.1063/1.115993
Autor:
T. Kirihata, G. Mueller, B. Ji, G. Frankowsky, J. Ross, H. Terletzki, D. Netis, O. Weinfurtner, D. Hanson, G. Daniel, L. Hsu, D. Storaska, A. Reith, M. Hug, K. Guay, M. Selz, P. Poechmueller, H. Hoenigschmid, M. Wordeman
Publikováno v:
1999 IEEE International Solid-State Circuits Conference. Digest of Technical Papers. ISSCC. First Edition (Cat. No.99CH36278).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0f0fcd0b78e94558e71dcbe866b56be3
https://doi.org/10.1109/isscc.1999.759336
https://doi.org/10.1109/isscc.1999.759336
Autor:
H. Hoenigschmid, A. Frey, J. DeBrosse, T. Kirihata, G. Mueller, G. Daniel, G. Frankowsky, K. Guay, D. Hanson, L. Hsu, B. Ji, D. Netis, S. Panaroni, C. Radens, A. Reith, D. Storaska, H. Terletzki, O. Weinfurtner, J. Alsmeier, W. Weber, M. Wordeman
Publikováno v:
1999 Symposium on VLSI Circuits. Digest of Papers (IEEE Cat. No.99CH36326).
A 7F/sup 2/ DRAM cell and corresponding vertically folded bitline architecture has been fabricated using a 0.175 /spl mu/m CMOS technology. This concept features an advanced 30/spl deg/ tilted array device layout and an area penalty free inter BL twi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5c35397f81af4dcc1520655829b3f0c9
https://doi.org/10.1109/vlsic.1999.797259
https://doi.org/10.1109/vlsic.1999.797259
Publikováno v:
Applied Physics Letters. 64:854-856
GaInAs layers were grown selectively on partially masked InP substrates by metalorganic vapor phase epitaxy using the conventional In precursor trimethyl‐indium (TMI) and the intramolecularly saturated compound dimethylaminopropyl‐dimethyl‐indi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e53fbf9e4f9496331d69429cbe27c587
https://doi.org/10.1063/1.111002
https://doi.org/10.1063/1.111002
Publikováno v:
1993 (5th) International Conference on Indium Phosphide and Related Materials.
The authors have studied the combination of the two alternative precursors DADI (dimethylaminopropyl-dimethylindium) and tertiary-butyl-arsine (TBA) in atmospheric pressure metalorganic vapor phase epitaxy of GaInAs lattice matched to InP. They could
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::073cef70fce83302a9f755472bb15342
https://doi.org/10.1109/iciprm.1993.380713
https://doi.org/10.1109/iciprm.1993.380713
Publikováno v:
Scopus-Elsevier
Using spatially and spectrally resolved low-temperature cathodoluminescence, we have investigated GaInAs/InP quantum wells grown by selective epitaxy. For quantum wells with a nominal thickness of 0.6 nm we observe a splitting of the luminescence int
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b9d8abd97e8ce41c830bf73a07440f8d
https://doi.org/10.1109/iciprm.1994.328304
https://doi.org/10.1109/iciprm.1994.328304
Publikováno v:
Scopus-Elsevier
We investigated optical properties (cathodoluminescence linescans) of selectively deposited quantum wells. As expected for selective MOVPE, composition and growth rate of bulk layers and quantum wells with thicknesses above 6 nm are determined by gas
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::cbacf5f07897d39ce162e53321143aea
https://doi.org/10.1109/iciprm.1995.522273
https://doi.org/10.1109/iciprm.1995.522273