Zobrazeno 1 - 10
of 37
pro vyhledávání: '"G. F. Spencer"'
Publikováno v:
Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits.
Epitaxial Si/ZnS/Si heterostructures were grown for the purpose of developing silicon-based quantum devices. An arsenic passivation technique was used on silicon surfaces for the growth of ZnS. A two-step growth method was developed for the epitaxial
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3a4618298ab2a8dc28f7d8434d4934b9
https://doi.org/10.1109/cornel.1995.482546
https://doi.org/10.1109/cornel.1995.482546
Experiments were performed to determine the effect of radiation on quantum devices. The devices included resonant tunneling devices and two-dimensional electron gas devices. None of the devices were radiation-hardened prior to testing. The radiation
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b4cee842e85adb26829e581d47c7b5f7
https://doi.org/10.21236/ada383248
https://doi.org/10.21236/ada383248
Publikováno v:
MRS Proceedings. 380
Special methods were developed to grow Si/ZnS/Si heterostructures for the purpose of developing silicon-based quantum devices. An arsenic passivation technique was used on silicon surfaces for the growth of ZnS. The effectiveness of this surface pass
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f35302ad6e9adbe41189edbf64c152ed
https://doi.org/10.1557/proc-380-3
https://doi.org/10.1557/proc-380-3
Publikováno v:
Physical review letters. 72(5)
We carried out magnetotransport measurements and scaling analysis to report on a new magnetic-field-induced metal-insulator transition in two dimensions, where the separatrix between insulating and conducting states appears at a critical magnetic fie
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c9da760155aa9b5b3086b2c307a5ba8e
https://pubmed.ncbi.nlm.nih.gov/10056503
https://pubmed.ncbi.nlm.nih.gov/10056503
Publikováno v:
MRS Proceedings. 300
Nanoscale gated quantum wires in GaAs MODFET material with the conduction channel and gates in the plane of the 2DEG have been fabricated and studied. Electron beam lithography was used for mask definition followed by flood exposure to low energy arg
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ca07e293a3ec8853bec502b5e263f859
https://doi.org/10.1557/proc-300-67
https://doi.org/10.1557/proc-300-67
Publikováno v:
Applied Physics Letters. 63:2277-2278
Giant magnetoresistance was observed in a disordered two‐dimensional electron system in a variable‐range hopping regime. The possibility of utilizing the phenomenon as a magnetic field sensor was demonstrated by the detection of trapped vortices
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2627821a1fadc1acfe895a53e6a3ef82
https://doi.org/10.1063/1.110528
https://doi.org/10.1063/1.110528
Publikováno v:
Journal of Applied Physics. 79:647
We present a systematic study of the low‐temperature magnetotransport properties of modulation‐doped GaAs heterostructures to examine the device isolation mechanism in a low‐energy (150 eV) Ar+ ion exposure process. Measurements were carried ou
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f31363e291aa4b238b808c6aa1cf4612
https://doi.org/10.1063/1.360807
https://doi.org/10.1063/1.360807
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 12:8
The fabrication of a nanoscale gated quantum wire in a GaAs modulation doped field effect transistor substrate is described. Both the wire conduction channel, with a 110 nm physical width, and the gates were patterned into the two‐dimensional elect
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6b3fa40985ff10979762d43a404ef2f7
https://doi.org/10.1116/1.587114
https://doi.org/10.1116/1.587114
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 11:2592
In order to determine the electrical isolation mechanism of low energy ions impinging on GaAs heterostructures, a systematic magnetotransport study was performed on the two‐dimensional electron gas (2DEG) of a GaAs modulation doped heterostructure.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ac6228e62b673c46cab5a6f58f4a1fb3
https://doi.org/10.1116/1.586631
https://doi.org/10.1116/1.586631
Publikováno v:
Journal of the American Oil Chemists Society. 58:545-550
Nine Spanish olive oils, including three each of virgin (pressed oil), refined virgin, and B-residue (solvent-extracted pomace oil) oils from different commercial sources, have been analyzed for their unsaponifiable matter (USM). Four sterolic fracti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::03d1628d6b3058a8b956baaded76f1b0
https://doi.org/10.1007/bf02541591
https://doi.org/10.1007/bf02541591