Zobrazeno 1 - 8
of 8
pro vyhledávání: '"G. F. Redinbo"'
Autor:
Richard C. Tiberio, David L. Allara, Michael J. Lercel, G. F. Redinbo, M. J. Rooks, C. W. Sheen, Harold G. Craighead
Publikováno v:
Microelectronic Engineering. 27:43-46
Self-assembled monolayers have been demonstrated to perform as high-resolution electron beam resists with minimum resolutions of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::43e730a5e71b39957652ed5752961fed
https://doi.org/10.1016/0167-9317(94)00052-v
https://doi.org/10.1016/0167-9317(94)00052-v
Publikováno v:
Journal of Applied Physics. 74:3099-3102
We have investigated proton implantation enhanced intermixing of GaAs/AlGaAs quantum wells for H+ doses ranging from 5×1013 to 1×1016 ions/cm2. Implantation of 20 keV H+ followed by a high temperature rapid thermal anneal leads to enhanced diffusio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ad477d14ebcfa623f74f40a546e63ca1
https://doi.org/10.1063/1.354575
https://doi.org/10.1063/1.354575
Publikováno v:
Applied Physics Letters. 68:1259-1261
Cathodoluminescence (CL) and continuous wave photoluminescence (cw‐PL) were used to study carrier recombination in the InxGa1−xAs/GaAs system for x=0.1 and x=0.2. Ambipolar diffusion length values of LD=0.9±0.1 μm and of LD=0.5±0.1 μm are mea
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fe9703c3725e37947eb8fe4a5378e2d0
https://doi.org/10.1063/1.115945
https://doi.org/10.1063/1.115945
Publikováno v:
Applied Physics Letters. 65:974-976
We have demonstrated that low energy electron beams (≤10 eV) from a scanning tunneling microscope (STM) can be used to modify a surface of self‐assembled monolayers of octadecanethiol [ODT, CH3(CH2)17SH] on gold and GaAs. STM modification in air
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e38070e04d149451834a7db174973bc7
https://doi.org/10.1063/1.113012
https://doi.org/10.1063/1.113012
Autor:
Harold G. Craighead, G. F. Redinbo
Publikováno v:
MRS Proceedings. 380
We have investigated the technique of implantation enhanced interdiffusion (IEI) for optical nanostructure fabrication in strained InxGal-xAs/GaAs quantum wells. Implantation masks with widths from 40 nm to 40 μm were fabricated on the surface of In
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1cbddeb6bdf8db6b5c7b2684f81a1db7
https://doi.org/10.1557/proc-380-67
https://doi.org/10.1557/proc-380-67
Publikováno v:
MRS Proceedings. 326
In this study, we have investigated the effectiveness of semimetallic, amorphous carbon films as a liftoff mask in the selective growth, by OMVPE, of GaInP epitaxial layers, on (001) oriented GaAs substrates. Scanning electron microscopy, cathodolumi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1eccfcd1f7d6bacc0c7d8831217deb5f
https://doi.org/10.1557/proc-326-55
https://doi.org/10.1557/proc-326-55
Autor:
David L. Allara, Michael J. Rooks, G. F. Redinbo, Michael J. Lercel, Atul N. Parikh, P. Simpson, Harold G. Craighead, Richard C. Tiberio, F. D. Pardo, C. W. Sheen
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 12:3663
Self‐assembled monolayers have been modified with focused electron beams of energy 1–50 keV and scanning tunneling microscopy (STM) based lithography with energies of ∼10 eV. Modifications ∼15 nm in size have been formed by STM and ∼25 nm i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7bac25d7942fb9dd35724d40832afa56
https://doi.org/10.1116/1.587635
https://doi.org/10.1116/1.587635
Publikováno v:
MRS Proceedings. 169
Critical current densities, magnetic field response, and microwave response have been measured for laser ablated YBa2Cu3O7-δ thin film lines on MgO and SrTiO3 substrates. Films on SrTiO3 have critical current densities > 1 x 106 A/cm2 at 77K and sho
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7f7251913c5a902b3221366fb9cb7941
https://doi.org/10.1557/proc-169-1193
https://doi.org/10.1557/proc-169-1193