Zobrazeno 1 - 10
of 46
pro vyhledávání: '"G. F. A. van de Walle"'
Autor:
G. F. A. van de Walle
Publikováno v:
Philips Journal of Research. 51:353-361
The trend of miniaturization of electronic products has had an effect on the development of passive components. A solution to the problems that are generated by size reduction of discrete passive components is to integrate resistors, capacitors and i
Publikováno v:
ChemInform. 22
Autor:
D.E.W. Vandenhoudt, J.M.L. van Rooij-Mulder, Dirk J. Gravesteijn, M.J.J. Theunissen, C. W. T. Bulle‐Lieuwma, G. F. A. van de Walle
Publikováno v:
Journal of Crystal Growth. 118:125-134
The characteristic shape of voids in UHV-deposited amorphous Si layers is investigated by TEM analysis. This shape is determined by the deposition temperature and by subsequent UHV annealing leading to densified layers. Amorphous layers with voids sh
Autor:
L.J. van IJzendoorn, Dirk J. Gravesteijn, C.W. Fredriksz, D.E.W. Vandenhoudt, C. W. T. Bulle‐Lieuwma, G. F. A. van de Walle, C. van Opdorp
Publikováno v:
Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms, 64(1-4), 120-124. Elsevier
Antimony 5-doping layers in Si have been prepared using molecular beam epitaxy. First of all, a crystalline buffer layer was deposited at 700°C, followed by Sb deposition from a Knudsen cell. After cooling down to room temperature, amorphous Si was
Autor:
J. F. van der Veen, W. F. J. Slijkerman, Dirk J. Gravesteijn, G. F. A. van de Walle, P. M. Zagwijn
Publikováno v:
Surface Science. 262:25-32
Medium-energy ion scattering was used to study the temperature dependence of the saturation coverage, the layer morphology and reordering of the substrate after adsorption of Sb 4 tetramers and Sb 1 monomers on Si(001). Depositions at room temperatur
Autor:
G. F. A. van de Walle, N. E. B. Cowern
Publikováno v:
Modern Physics Letters B. :1555-1566
Diffusion where an impurity ‘jumps’ at random time intervals by converting to a fast-migrating intermediate species, appears to be quite common in semiconductors. The special characteristics of this ‘intermittent’ mode of diffusion are analys
Publikováno v:
Journal of Applied Physics. 70:3003-3006
Epitaxial layers of silicon grown on a Si(100) substrate by molecular‐beam epitaxy (MBE) and solid‐phase epitaxy (SPE) have been investigated by slow positron beam analysis methods. Results of Doppler broadening measurements revealed that the S p
Autor:
Dirk J. Gravesteijn, G. F. A. van de Walle, W. F. J. Slijkerman, J. F. van der Veen, P. M. Zagwijn
Publikováno v:
Journal of Applied Physics. 70:2111-2116
We have studied Sb segregation at the moving crystal‐amorphous Si(001) interface during preparation of Sb delta‐doping layers. X‐ray reflectivity measurements reveal a broadening of the delta‐doping profile as a result of segregation during a
Publikováno v:
Physical Review Letters. 67:212-215
Many substitutional impurities in crystalline solids diffuse by a hybrid mechanism involving a fast-migrating intermediate species. Nonequilibrium measurements of the migration frequency g and migration length \ensuremath{\lambda} for such an impurit
Publikováno v:
Surface and Interface Analysis. 17:556-566
A number of Si/Si1−x Gex heterostructures, grown by molecular beam epitaxy (MBE) and vapour phase epitaxy (VPE), were examined with secondary ion mass spectrometry (SIMS). A variety of experimental conditions was employed, limited to positive secon