Zobrazeno 1 - 10
of 10
pro vyhledávání: '"G. E. Yakovlev"'
Publikováno v:
Industrial laboratory. Diagnostics of materials. 87:35-44
The properties of interfaces in the heterostructures which frequently govern their operation are of particular importance for the devices containing heterostructures as active elements. Any further improving of the characteristics of semiconductor de
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::34ce39e091e644a3d913aae35bc36cd5
https://doi.org/10.26896/1028-6861-2021-87-1-35-44
https://doi.org/10.26896/1028-6861-2021-87-1-35-44
Publikováno v:
Semiconductors. 53:268-272
The specific features of applying electrochemical capacitance–voltage profiling to investigate heavily doped structures with a sharp doping profile are considered. Criteria are presented, and recommendations are given for selection of the optimal m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6d9e14afdde47dad7e4b43497be090fe
https://doi.org/10.1134/s1063782619020076
https://doi.org/10.1134/s1063782619020076
Autor:
M. V. Dorokhin, Yu. A. Danilov, A. V. Zdoroveyshchev, V. I. Zubkov, G. E. Yakovlev, A. V. Kudrin, E. I. Malysheva, A. L. Dudin, B. N. Zvonkov
Publikováno v:
Semiconductors. 52:1004-1011
GaAs light-emitting (LED) and HEMT structures with δ-doped regions, InGaAs/GaAs quantum wells, and surface layers of InAs/GaAs quantum dots were studied by means of the electrochemical capacitance- voltage profiling technique. The concentration dept
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bcb876266a9820f185d6ccb28b2f11d0
https://doi.org/10.1134/s1063782618080250
https://doi.org/10.1134/s1063782618080250
Autor:
Sergey V. Zaitsev, A. V. Rykov, A. V. Kudrin, G. E. Yakovlev, A. V. Zdoroveyshchev, M. V. Dorokhin, V. I. Zubkov, D. S. Frolov, Yu. A. Danilov, E. I. Malysheva
Publikováno v:
Technical Physics. 62:1545-1550
Optical and transport properties of the heterostructure with the InAs/GaAs quantum dots doped with manganese or chromium atoms in the course of growth using metal-organic vapor phase epitaxy (MOVPE) are analyzed. Circularly polarized luminescence was
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::473d35fdf9faa93cd49d0a703f00cef8
https://doi.org/10.1134/s1063784217100085
https://doi.org/10.1134/s1063784217100085
Autor:
E. E. Levina, V. I. Zubkov, A. V. Solomonov, A. V. Zubkova, G. E. Yakovlev, D. S. Frolov, S. A. Sorokin, O. K. Sterlyadkin
Publikováno v:
Semiconductors. 50:320-325
The method of electrochemical capacitance–voltage profiling is used to study boron-implanted silicon structures for CCD matrices with backside illumination. A series of specially prepared structures with different energies and doses of ion implanta
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::50ae379698b6df638fb37b8b4d0a5a68
https://doi.org/10.1134/s1063782616030234
https://doi.org/10.1134/s1063782616030234
Autor:
S M Sobolev, G E Yakovlev
Publikováno v:
Journal of Physics: Conference Series. 1199:012036
GaAs-based LED and HEMT heterostructures were investigated using numerical simulation of the self-consistent Schrodinger and Poisson equations. The depth distributions of free charge carriers were obtained by simulation and analyzed in detail, then c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::560494d015b3128d680d9deee516ae6e
https://doi.org/10.1088/1742-6596/1199/1/012036
https://doi.org/10.1088/1742-6596/1199/1/012036
Autor:
G. E. Yakovlev, Yu. I. Galushkin
Publikováno v:
Geochemistry International. 45:625-637
Numerous studies on the potential of hydrocarbon generation by the rocks of the sedimentary cover of the northern Precaspian Basin are based either on the interpolation of measurements from a relatively sparse boreholes network or on the numerical es
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::42bae499a133b5cc022011a7c2c48fe8
https://doi.org/10.1134/s0016702907070014
https://doi.org/10.1134/s0016702907070014
Autor:
Yu. I. Galushkin, G. E. Yakovlev
Publikováno v:
Tectonophysics. 379:139-157
The GALO system is applied to the numerical reconstruction of burial and thermal histories of the West Bashkirian lithosphere from the Riphean to the present. An analysis of the variation in tectonic subsidence of the basin during its development is
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::655031f4e4d01535cc2334c0ef0a5bcb
https://doi.org/10.1016/j.tecto.2003.10.019
https://doi.org/10.1016/j.tecto.2003.10.019
Autor:
G. E. Yakovlev, Y. K. Burlin
Publikováno v:
60th EAGE Conference and Exhibition.
The common tendency in development of sedimentary basins had taken place on the Eastern margin of East European craton.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3e6923faa8b0693a1316faa0b1ea5cd3
https://doi.org/10.3997/2214-4609.201408473
https://doi.org/10.3997/2214-4609.201408473
Publikováno v:
Journal of Physics: Conference Series; 2019, Vol. 1124 Issue 4, p1-1, 1p