Zobrazeno 1 - 3
of 3
pro vyhledávání: '"G. E. Lux"'
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 11:2373-2378
The titanium based matrices TiSi2, TiN, and TiW are used extensively in current semiconductor fabrication. Quantification of elements in these matrices using secondary ion mass spectrometry (SIMS) is hampered by a lack of available information on the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::684b3e07da980a43b225c93f2b5908a5
https://doi.org/10.1116/1.578336
https://doi.org/10.1116/1.578336
Publikováno v:
Journal of Applied Physics. 73:2524-2529
Depth profiles and secondary ion mass spectrometry (SIMS) relative sensitivity factors (RSF) for quantification (inverse relative ion yields) are reported for oxygen ion bombardment and positive secondary ion mass spectrometry and for cesium bombardm
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a330a1fe2b42d3bffeecd824bed0024b
https://doi.org/10.1063/1.353084
https://doi.org/10.1063/1.353084
Publikováno v:
Surface and Coatings Technology. 51:358-363
More than 50 elements from hydrogen to uranium were implanted into beryllium, aluminum, titanium, nickel, tungsten and gold at energies up to 0.6 MeV and at fluences from 3 × 1013 to 5 × 1015 cm-2 to create standards appropriate for depth profiling
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::056fb65a42692a9a0da894445a257de5
https://doi.org/10.1016/0257-8972(92)90264-b
https://doi.org/10.1016/0257-8972(92)90264-b