Zobrazeno 1 - 10
of 385
pro vyhledávání: '"G. E. Cirlin"'
Autor:
R. R. Reznik, K. P. Kotlyar, I. V. Ilkiv, A. I. Khrebtov, I. P. Soshnikov, S. A. Kukushkin, A. V. Osipov, E. V. Nikitina, G. E. Cirlin
Publikováno v:
Advances in Condensed Matter Physics, Vol 2018 (2018)
The possibility of GaN, InN, and A3B5 nanowires MBE growth on a silicon substrate with a nanoscale SiC buffer layer has been demonstrated. Optical studies indicated a higher structural quality GaN NWs compared with the best structures of GaN NWs with
Externí odkaz:
https://doaj.org/article/1075ccf793d04c9ab9e5c732c9417851
Autor:
I. V. Ilkiv, K. P. Kotlyar, D. A. Kirilenko, A. V. Osipov, I. P. Soshnikov, A. N. Terpitsky, G. E. Cirlin
Publikováno v:
Semiconductors. 55:678-681
Autor:
I. P. Soshnikov, Konstantin P. Kotlyar, Sergey V. Mikushev, Vladimir G. Dubrovskii, Demid A. Kirilenko, Andrey V. Osipov, Igor V. Ilkiv, G. E. Cirlin
Publikováno v:
ACS Applied Nano Materials. 4:7289-7294
Autor:
V. O. Gridchin, R. R. Reznik, K. P. Kotlyar, V. V. Lendyashova, A. S. Dragunova, D. A. Kirilenko, N.V. Kryzhanovskaya, G. E. Cirlin
Publikováno v:
2022 International Conference Laser Optics (ICLO).
Publikováno v:
2022 International Conference Laser Optics (ICLO).
Hybrid nanostructures based on InGaN nanowires with deposited Ag NPs-SiOx for visible emission range
Publikováno v:
2022 International Conference Laser Optics (ICLO).
Publikováno v:
Technical Physics Letters. 47:862-864
Autor:
R. R. Reznik, K. M. Morozov, I. L. Krestnikov, K. P. Kotlyar, I. P. Soshnikov, L. Leandro, N. Akopian, G. E. Cirlin
Publikováno v:
Technical Physics Letters. 47:405-408
Autor:
G. E. Cirlin, Rodion R. Reznik, A. I. Khrebtov, I. D. Skurlov, I. V. Shtrom, A. S. Kulagina, A. P. Litvin, V. V. Danilov, E. S. Gromova
Publikováno v:
Semiconductors. 54:1141-1146
The results of studies of the decay photodynamics of excited states in a hybrid semiconductor nanostructure formed as an array of InP nanowires with an InAsP nanoinsert that are passivated with a quasi-Langmuir trioctylphosphine oxide (TOPO) layer co
Autor:
Alexey E. Zhukov, Rustam A. Khabibullin, Rodion R. Reznik, V. I. Gavrilenko, K. V. Maremyanin, S. V. Morozov, G. E. Cirlin
Publikováno v:
Semiconductors. 54:1092-1095
Data on the synthesis of structures for a quantum cascade terahertz laser in the AlGaAs/GaAs material system on GaAs substrates using the molecular-beam-epitaxy method and their characterization are presented. The specific features necessary for the