Zobrazeno 1 - 10
of 36
pro vyhledávání: '"G. E. Bulman"'
Autor:
G. E. Bulman, Dallas A. Marckx, Peter Thomas, Gordon Krueger, Rama Venkatasubramanian, Brian Ratliff
Publikováno v:
IEEE Electron Device Letters. 35:476-478
Single couple PbTe/TAGS-85 and thin-film superlattice Bi2Te3-based thermoelectric couples operated in a downhill active cooling mode, where the cold side temperature (Tc) is above that of the heat sink (Th), are shown to be able to pump heat loads of
Autor:
J. B. Lam, Jerzy S. Krasinski, T. Sugahara, S. K. Shee, J. J. Song, B. D. Little, Hua-Shuang Kong, Y. H. Kwon, G. E. Bulman, Gordon Gainer, Gil Han Park, S. Bidnyk, S.J. Hwang
Publikováno v:
physica status solidi (a). 183:105-109
We achieved low-threshold ultra-violet lasing in optically pumped GaN/AlGaN separate confinement heterostructures over a wide temperature range. Lasing modes of a single microcavity were examined from 20 to 300 K and gain mechanisms were compared to
Autor:
D. Slater, D. Emerson, K. Doverspike, John A. Edmond, K. Haberern, G. E. Bulman, Hua-Shuang Kong, H. Dieringer
Publikováno v:
Materials Science Forum. :1477-1482
Autor:
Yong-Hwan Kwon, H. S. Kong, G. H. Gainer, S. Bidnyk, J. B. Lam, G. E. Bulman, B. D. Little, J.J. Song
Publikováno v:
MRS Internet Journal of Nitride Semiconductor Research. 5:661-667
We report on an experimental study of microstructure-based lasing in an optically pumped GaN/AlGaN separate confinement heterostructure (SCH). We achieved low-threshold ultra-violet lasing in optically pumped GaN/AlGaN separate confinement heterostru
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 16:607-610
Changes in film morphology upon annealing Ni and Ni/Au contacts to GaN were examined using scanning electron microscopy and atomic force microscopy. Atomic force microscopy was performed on the GaN surface that was exposed by etching away the metal f
Autor:
John R. Thome, Jackson B. Marcinichen, Jay Lewis, Brian P. d’Entremont, G. E. Bulman, Rama Venkatasubramanian
Publikováno v:
Volume 1: Advanced Packaging; Emerging Technologies; Modeling and Simulation; Multi-Physics Based Reliability; MEMS and NEMS; Materials and Processes.
This study concerns cooling of electronic components of intense background heat flux with one ultra intense hot spot (e.g. 1000 Wcm−2 on a footprint of 1 cm × 1 cm with 5000 Wcm−2 applied to a 0.02 cm × 0.02 cm region at the center). To manage
Autor:
Irina P. Nikitina, Alexander V. Babanin, N.A. Bert, A. A. Sitnikova, D. V. Tsvetkov, G. E. Bulman, Vladimir A. Dmitriev, K.G. Irvine, Yu. G. Musikhin, John A. Edmond, Andrey Zubrilov, V. Nikolaev
Publikováno v:
Journal of Crystal Growth. 166:601-606
GaN is a promising wide-band-gap semiconductor for the production of blue and UV emitters. The main problem for the advancement of GaN device technology is the absence of GaN substrates. SiC may be used as a substrate for GaN because of its reasonabl
Autor:
G. E. Bulman, Charles Stokes, Jonathan Pierce, Rama Venkatasubramanian, Thomas Colpitts, Brooks O'Quinn, Edward Siivola, Philip Barletta, David A. Koester, J. B. Posthill
Publikováno v:
Modules, Systems, and Applications in Thermoelectrics ISBN: 9780429088254
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::91730c04b476308a704902b0412365cd
https://doi.org/10.1201/b11892-24
https://doi.org/10.1201/b11892-24
Autor:
B. D. Little, Yong-Hwan Kwon, T. J. Schmidt, J. B. Lam, G. E. Bulman, H. S. Kong, J. J. Song, S. Bidnyk
Publikováno v:
Applied Physics Letters. 75:3905-3907
We report the results of an experimental study on efficient laser action in an optically pumped GaN/AlGaN separate-confinement heterostructure (SCH) in the temperature range of 10–300 K. The lasing threshold was measured to be as low as 15 kW/cm2 a
Publikováno v:
Applied Physics Letters. 73:493-495
We report on spatially resolved optical measurements of high-quality InGaN/GaN multiple quantum wells under conditions of direct high optical injection (>1019 cm−3) using near-field optical microscopy in the collection mode. The spectral dependence