Zobrazeno 1 - 10
of 145
pro vyhledávání: '"G. Doornbos"'
Autor:
C. H. Wang, G. Doornbos, G. Astromskas, G. Vellianitis, R. Oxland, M. C. Holland, M. L. Huang, C. H. Lin, C. H. Hsieh, Y. S. Chang, T. L. Lee, Y. Y. Chen, P. Ramvall, E. Lind, W. C. Hsu, L.-E. Wernersson, R. Droopad, M. Passlack, C. H. Diaz
Publikováno v:
AIP Advances, Vol 4, Iss 4, Pp 047108-047108-9 (2014)
Two high-k dielectric materials (Al2O3 and HfO2) were deposited on n-type (100) and (110) InAs surface orientations to investigate physical properties of the oxide/semiconductor interfaces and the interface trap density (Dit). X-ray photoelectron spe
Externí odkaz:
https://doaj.org/article/c841c504d9fa439b858a0ea944715b3b
Autor:
Willem G. Doornbos
Publikováno v:
De Boekenwereld. 38:74-77
Akademický článek
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Autor:
M. Passlack, Peter Ramvall, T. Vasen, L.-E. Wernersson, G. Doornbos, Kimberly A. Dick, Aryan Afzalian, M. Holland, Claes Thelander
Publikováno v:
Scientific Reports, Vol 9, Iss 1, Pp 1-9 (2019)
Scientific Reports
Scientific Reports
Tunneling Field-Effect Transistors (TFET) are one of the most promising candidates for future low-power CMOS applications including mobile and Internet of Things (IoT) products. A vertical gate-all-around (VGAA) architecture with a core shell (C-S) s
Akademický článek
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Autor:
M. Passlack, T. Vasen, Kimberly A. Dick, M. Holland, Claes Thelander, Aryan Afzalian, G. Doornbos, Peter Ramvall, L.-E. Wernersson
Publikováno v:
2019 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA).
Tunneling field-effect transistors (TFET) based on a vertical gate-all-around (VGAA) nanowire (NW) architecture with a core-shell (CS) structure have been explored for future CMOS applications. Performance predictions based on a tight-binding mode-sp
Autor:
Ravi Droopad, Peter Ramvall, J.-R. Ramirez, M. Holland, L.-E. Wernersson, Kimberly A. Dick, Georgios Vellianitis, M. Passlack, G. Doornbos, Richard Kenneth Oxland, S. Wang, Yee-Chia Yeo, Claes Thelander, M.J.H. van Dal, Aryan Afzalian, Blandine Duriez, T. Vasen, Lars Samuelson, Tung-Tsun Chen
Publikováno v:
2016 IEEE Symposium on VLSI Technology.
InAs nanowires (NW) grown by MOCVD with diameter d as small as 10 nm and gate-all-around (GAA) MOSFETs with d = 12–15 nm are demonstrated. I on = 314 µA/µm, and S sat =68 mV/dec was achieved at V dd = 0.5 V (I off = 0.1 µA/µm). Highest g m meas
Autor:
Malgorzata Jurczak, M. Masahara, F. Neuilly, Liesbeth Witters, Serge Biesemans, E. Suzuki, Christa Vrancken, R. Surdeanu, Katia Devriendt, V.H. Nguyen, G. Van den bosch, Eddy Kunnen, G. Doornbos
Publikováno v:
Microelectronic Engineering. 84:2097-2100
Flexibly controllable threshold voltage (V"t"h) asymmetric gate oxide thickness (T"o"x) independent double-gate (DG) FinFETs (4T-FinFETs) have been demonstrated. Thin drive-gate oxide (HfO"2 or SiON or SiO"2) and slightly thick V"t"h-control-gate oxi
Publikováno v:
Statistics in Medicine. 19:2569-2578
We used disease mapping for health impact assessment of the national airport of the Netherlands. Spatio-temporal models were used to relate hospital discharge data for acute myocardial infarction and bronchitis in 1991, 1992 and 1993 to noise and dis
Autor:
J.C. Martinez, J.M. Huijbregtse, B. Stäuble-Pümpin, A.M. Testa, R.P. Griessen, G. Doornbos, Bernard Dam, F.C. Klaassen, R.C.F. van der Geest, S. Freisem, J.H. Rector
Publikováno v:
Nature. 399:439-442
Thin films of the high-temperature superconductor YBa2Cu3O7−δ exhibit both a large critical current (the superconducting current density generally lies between 1011 and 1012 A m−2 at 4.2 K in zero magnetic field) and a decrease in such currents