Zobrazeno 1 - 10
of 42
pro vyhledávání: '"G. Derst"'
Publikováno v:
Berichte der Bunsengesellschaft für physikalische Chemie. 101:1258-1264
With recent developments in solid state detectors combined with X-rays at glancing angles of incidence, Extended X-ray Absorption Fine Structure (EXAFS) experiments on arsenic ion-implanted into amorphous silicon surfaces have been obtained at diluti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0df82539586338a280b1309422254e16
https://doi.org/10.1002/bbpc.199700036
https://doi.org/10.1002/bbpc.199700036
Autor:
S. Kalbitzer, Andrew J. Dent, G. Derst, G.N. Greaves, B. R. Dobson, Gerhard Krötz, Gerhard Müller, W. Hellmich
Publikováno v:
Philosophical Magazine B. 73:245-259
Substitutional (B, P, As and Ga) and interstitial (K) dopants have been incorporated into H‐free amorphous Si (a‐Si) films produced by ion beam amorphization of crystalline silicon material. X‐ray absorption fine‐structure, photothermal defle
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c45ad494194b4f3b08425d6497d5aba6
https://doi.org/10.1080/01418639609365822
https://doi.org/10.1080/01418639609365822
Publikováno v:
Applied Physics A Materials Science and Processing. 61:193-201
Fine-grained (d≈0.1 μm), polycrytalline SiC films were prepared on top of insulating and optically transparent sapphire substrates by means of a thermal crystallization technique. Optical absorption measurements indicate that the individual SiC gr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::05c40885cbe9310f9ee7c9d1ccb5056d
https://doi.org/10.1007/bf01538389
https://doi.org/10.1007/bf01538389
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 97:426-429
Using a newly developed reflectometer we have measured the reflectivity of crystalline silicon and SiO x coated float glass at the silicon K absorption edge. The reflectometer can be used without the need for ultra high vacuum. The critical angle of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::75cc74f6d46a73f5f185a3a96389261f
https://doi.org/10.1016/0168-583x(94)00387-4
https://doi.org/10.1016/0168-583x(94)00387-4
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 97:312-315
To detect changes in the environment of the lattice constituents in ion beam amorphized Si material at various stages of annealing glancing angle X-ray absorption fine structure (XAFS) measurements at the Si K-edge were performed. The recrystallisati
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5ab9c47e5f1c3c39bc6a8921da94dad2
https://doi.org/10.1016/0168-583x(95)00361-4
https://doi.org/10.1016/0168-583x(95)00361-4
Publikováno v:
Materials Science and Engineering: B. 29:147-150
Fine-grained (d ≈ 0.1 μm), polycrystalline (pc) SiC films were prepared on top of insulating and optically transparent sapphire substrates by a thermal crystallization technique (SiCOS films). Unlike high-temperature deposited pc-SiC films, SiCOS
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5ea98e97e10eb7eb7dacd9a74419387b
https://doi.org/10.1016/0921-5107(94)04026-z
https://doi.org/10.1016/0921-5107(94)04026-z
Publikováno v:
Radiation Effects and Defects in Solids. 128:341-355
Optical reflection spectra and their derivatives of Ar+ ion (75 keV) bombarded single crystals of Si and GaAs, with fluence ranging from 5 × 1011-1 × 1015 ions cm−2, have been investigated in the spectral region of interband optical transitions.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f6942d3174e59bcc1c416d2349e2c7bc
https://doi.org/10.1080/10420159408221056
https://doi.org/10.1080/10420159408221056
Publikováno v:
Diamond and Related Materials. 3:917-921
Thin-film SiC in its various crystalline (c-) and amorphous (a-) forms exhibits a number of properties which make these materials interesting for optical and optoelectronic applications. This paper describes the preparation and properties of such fil
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8c983abf382c11d7b1ddcaa4789b321f
https://doi.org/10.1016/0925-9635(94)90299-2
https://doi.org/10.1016/0925-9635(94)90299-2
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. :927-930
Ion implantation doping experiments have been performetion fine-grained, polycrystalline SiC films deposited onto insulating and optically transparent sapphire substrates. The efficiency of implantation doping has been found to be critically dependen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b811a17be141d25f1e49a9322140aa86
https://doi.org/10.1016/0168-583x(93)90711-e
https://doi.org/10.1016/0168-583x(93)90711-e
Publikováno v:
Materials Science and Engineering: B. 11:79-82
Thin crystalline films of SiC have been produced by ion beam modification of heteroepitaxial silicon thin films on sapphire and by plasma-enhanced chemical vapour deposition on crystalline silicon and sapphire substrates. Both methods yield highly tr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8803971158132781060e07d2a44e4129
https://doi.org/10.1016/0921-5107(92)90195-f
https://doi.org/10.1016/0921-5107(92)90195-f