Zobrazeno 1 - 10
of 69
pro vyhledávání: '"G. Dehlinger"'
Autor:
Steven J. Koester, Fuad E. Doany, Laurent Schares, Clint L. Schow, Richard A. John, Jeremy D. Schaub, G. Dehlinger
Publikováno v:
Journal of Lightwave Technology. 25:46-57
In this paper, an overview and assessment of high-performance receivers based upon Ge-on-silicon-on-insulator (Ge-on-SOI) photodiodes and Si CMOS amplifier ICs is provided. Receivers utilizing Ge-on-SOI lateral p-i-n photodiodes paired with high-gain
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::447ee2f599723f9b1515f425efbf3d99
https://doi.org/10.1109/jlt.2006.888923
https://doi.org/10.1109/jlt.2006.888923
Publikováno v:
IEEE Journal of Selected Topics in Quantum Electronics. 12:1489-1502
An overview of recent results on high-speed germanium-on-silicon-on-insulator (Ge-on-SOI) photodetectors and their prospects for integrated optical interconnect applications are presented. The optical properties of Ge and SiGe alloys are described an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4b2ea7a3e21eaf8590e2caa503bd3354
https://doi.org/10.1109/jstqe.2006.883160
https://doi.org/10.1109/jstqe.2006.883160
Autor:
Jack O. Chu, Laurent Schares, S.J. Koester, Richard A. John, Fuad E. Doany, Clint L. Schow, G. Dehlinger, Jeremy D. Schaub
Publikováno v:
ECS Transactions. 3:99-109
This paper provides an assessment of the performance capabilities of infrared detectors and receivers using Ge-on- silicon-on-insulator (Ge-on-SOI) photodiodes and CMOS ICs. An overview of our recent results on these detectors is given, and an estima
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6775563d609be0e5ad31da11bf277160
https://doi.org/10.1149/1.2355798
https://doi.org/10.1149/1.2355798
Autor:
David C. Ahlgren, John D. Cressler, S.J. Koester, K Rim, S.A.S.T Onge, G Dehlinger, Gregory G. Freeman, Alvin J. Joseph, Jae-Sung Rieh, Douglas D. Coolbaugh, F Anderson, David R. Greenberg, J. Dunn, Vidhya Ramachandran, David L. Harame, P Cottrel, S. Subbanna
Publikováno v:
Applied Surface Science. 224:9-17
SiGe is having a major impact in device electronics. The most mature application is the SiGe BiCMOS technology which is in production throughout the world. The areas of most rapid growth are in CMOS where SiGe is being considered for a wide variety o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ba2d2e14258aac25be777a3c9ae6dbb6
https://doi.org/10.1016/j.apsusc.2003.08.086
https://doi.org/10.1016/j.apsusc.2003.08.086
Autor:
D. L’Hôte, Thomas Ihn, G. Dehlinger, Detlev Grützmacher, R. Tourbot, R. Leturcq, V. Senz, Klaus Ensslin, Ulf Gennser
Publikováno v:
Europhysics Letters (EPL). 61:499-505
We study the resistivity vs. electric-field dependence ρ(E) of a dilute two-dimensional hole (h) system in SiGe, on both sides of the crossover from weak to strong localization at B = 0. Using ρ as a "thermometer" to obtain the effective temperatur
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::65b4bbeed68e006e9e6b97ea8b1955cf
https://doi.org/10.1209/epl/i2003-00157-x
https://doi.org/10.1209/epl/i2003-00157-x
Autor:
Klaus Ensslin, Thomas Heinzel, Detlev Grützmacher, Thomas Ihn, Euyheon Hwang, Ulf Gennser, G. Dehlinger, V. Senz, S. Das Sarma
Publikováno v:
Physica E: Low-dimensional Systems and Nanostructures. 13:723-727
The temperature dependence of a system exhibiting a `metal-insulator transition in two dimensions at zero magnetic field' (MIT) is studied up to 90K. Using a classical scattering model we are able to simulate the non-monotonic temperature dependence
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3ccc48201f00444eefa263548cdcec86
https://doi.org/10.1016/s1386-9477(02)00268-0
https://doi.org/10.1016/s1386-9477(02)00268-0
Autor:
G. Dehlinger, Hans Sigg, Detlev Grützmacher, Olivier Kermarrec, Elisabeth Müller, Yves Campidelli, Laurent Diehl, Daniel Bensahel, Ulf Gennser, Jérôme Faist, Isabelle Sagnes, Klaus Ensslin
Publikováno v:
Physica E: Low-dimensional Systems and Nanostructures. 13:829-834
Si=SiGe quantum cascade structure of 3 × 4 periods show well-resolved intersubband electroluminescence, whose non-radiativelifetimesarefoundtodependstronglyonthedesignofthequantumwellstructure,andareshowntoreachvaluescomparabletothatofanequivalentGa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::161b2915b989fd2c4de0034d991fe70c
https://doi.org/10.1016/s1386-9477(02)00214-x
https://doi.org/10.1016/s1386-9477(02)00214-x
Autor:
Laurent Diehl, G. Bauer, Ulf Gennser, Tomas Roch, Hans Sigg, G. Dehlinger, Jérôme Faist, S. Stutz, Detlev Grützmacher, J. Stangl, Elisabeth Müller
Publikováno v:
Materials Science and Engineering: B. 89:30-35
In this paper, we report on the successful deposition of Si/SiGe quantum cascade (QC) structures by molecular beam epitaxy (MBE). The structures are pseudomorphically grown on Si in the metastable regime, thus low temperature (T=350 °C) deposition i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::04a183511d0ce39b233247539d4c3144
https://doi.org/10.1016/s0921-5107(01)00786-3
https://doi.org/10.1016/s0921-5107(01)00786-3
Autor:
Klaus Ensslin, Ulf Gennser, Laurent Diehl, Hans Sigg, G. Dehlinger, S. Stutz, Elisabeth Müller, Detlev Grützmacher, Jérôme Faist
Publikováno v:
Physica E: Low-dimensional Systems and Nanostructures. 11:240-244
The principle of intersubband emission is applied to the Si/SiGe material system, using hole intersubband transitions in structures grown pseudo-morphically on Si substrate by molecular beam epitaxy. Cascade structures consisting of three times four
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d034445458bd95b8abf97b5d36ebfa0f
https://doi.org/10.1016/s1386-9477(01)00211-9
https://doi.org/10.1016/s1386-9477(01)00211-9
Publikováno v:
Thin Solid Films. 369:390-393
Pseudomorphically grown p-type Si/SiGe double barrier resonant tunneling diodes have been investigated. The main resonances are shown to be due to tunneling through heavy and light hole states in the well. However, temperature activated resonances an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3f015d07af6b4d53bbbad14cc8bbc1c5
https://doi.org/10.1016/s0040-6090(00)00897-x
https://doi.org/10.1016/s0040-6090(00)00897-x