Zobrazeno 1 - 10
of 72
pro vyhledávání: '"G. DeSalvo"'
Akademický článek
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Autor:
Kristofer Roe, G. Desalvo, G. Katulka, G. Eldridge, R. Messham, James Kolodzey, R. C. Clarke, Charles P. Swann
Publikováno v:
Journal of Electronic Materials. 31:346-350
The effects of implanted Ge on the resistance of nickel-metal contacts to n-type and p-type 4H-SiC are reported. The Ge was implanted with an energy of 346 keV and a dose of 1.7 × 1016 cm-2, and the wafer was annealed up to 1700°C for 30 min. Conta
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7c5fbd5ca241ee8b14e4b13746251678
https://doi.org/10.1007/s11664-002-0080-0
https://doi.org/10.1007/s11664-002-0080-0
Autor:
J. Gillespie, R. Dettmer, T. Quach, T. Jenkins, K. Nakano, J. Ebel, J. Sewell, C. Bozada, G. DeSalvo, C. Havasy, C. Pettiford, D. Via, C. Ito, R. Anholt
Publikováno v:
Solid-State Electronics. 41:1739-1743
In heterojunction bipolar transistors (HBTs), the reverse base currents flow from the outer base periphery to the collector. The reverse base and collector resistances are therefore dominated by contact resistance, which is inversely proportional to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::129e82cb34a5d38950d71459c97d25c6
https://doi.org/10.1016/s0038-1101(97)00150-0
https://doi.org/10.1016/s0038-1101(97)00150-0
Autor:
G. DeSalvo, K. Nakano, J. Ebel, J. Gillespie, J. Sewell, R. Anholt, C. Bozada, J. Barrette, T. Jenkins, D. Via, C. Pettiford, T. Quach, C. Ito, R. Dettmer, C. L. A. Cerny, C. Havasy
Publikováno v:
Solid-State Electronics. 41:1303-1308
We compare measured collector current densities, cutoff frequencies (ft), and transducer gains for thermally shunted heterojunction bipolar transistors with 2–16 μm emitter dot diameters or 2–8 μm emitter bar widths with models of the emitter u
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::11c7a3f50e26cf303dcd4b3493ac51a0
https://doi.org/10.1016/s0038-1101(97)00127-5
https://doi.org/10.1016/s0038-1101(97)00127-5
Publikováno v:
Journal of Applied Physics. 70:4181-4189
The lattice damage and the nature of the atomic intermixing of Al and Ga induced by As++ implantation and thermal annealing in AlAs/GaAs multiple quantum‐well structures were investigated. The photoluminescence spectra, which show multiple peaks af
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d2917f7c5a3cbc0cd5b893962a389fa8
https://doi.org/10.1063/1.349142
https://doi.org/10.1063/1.349142
Publikováno v:
2007 65th Annual Device Research Conference.
In this abstract, Northrop Grumman presents a novel monolithically integrated 1 kV normally-off VJFET power switch that combines a normally-off VJFET section with a normally-on VJFET section in a single vertical structure. The upper gates control the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::655fe65d09d31cc2ff9ab30184d488fe
https://doi.org/10.1109/drc.2007.4373636
https://doi.org/10.1109/drc.2007.4373636
Publikováno v:
2006 IEEE MTT-S International Microwave Symposium Digest.
This paper discusses a predistortion linearizer developed for use with multi-octave high power GaN amplifiers. This linearizer was produced as a GaN MMIC and displays useful characteristics over a frequency range from less than 4 GHz to greater than
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a70ace60bd1351b26e5ad0d84741335f
https://doi.org/10.1109/mwsym.2006.249503
https://doi.org/10.1109/mwsym.2006.249503
Akademický článek
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Autor:
Christopher A. Bozada, Ron Kaspi, Charles Cerny, James K. Gillespie, R. Dettmer, E. Stutz, R. Welch, J. Van Nostrand, J. Ebel, G. DeSalvo, E. Taylor, D. Via, F. Schuermeyer, Matthew J. O'Keefe, C. Pettiford, T. Jenkins, Tony Quach
Publikováno v:
Conference Proceedings. 1998 International Conference on Indium Phosphide and Related Materials (Cat. No.98CH36129).
The incorporation of bi-axially compressive strain has been experimentally designed into GaAsSb/InAlAs heterostructures grown on InP substrates for improved electronic transport. The bi-axially compressive strain results from growing the GaAsSb off t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::35f50c4224a2f2d6416b0168d3f1f63a
https://doi.org/10.1109/iciprm.1998.712418
https://doi.org/10.1109/iciprm.1998.712418
Autor:
Ross W. Dettmer, C. L. A. Cerny, Christopher A. Bozada, J. Sewell, T. Quach, C. Pettiford, J. Ebel, K. Nakano, J. Gillespie, G. DeSalvo, G. Via, T. Jenkins, Tuviah E. Schlesinger, R. Welch
Publikováno v:
1998 IEEE International Reliability Physics Symposium Proceedings 36th Annual (Cat No 98CH36173) RELPHY-98.
We have developed and demonstrated new techniques for failure analysis based on focused ion beam (FIB) cross-sectioning and inspection by atomic force microscopy (AFM). Normally, inspection after FIB cross-sectioning is done by scanning electron micr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3858b4bc3038b3390a5402556a706293
https://doi.org/10.1109/relphy.1998.670475
https://doi.org/10.1109/relphy.1998.670475