Zobrazeno 1 - 10
of 23
pro vyhledávání: '"G. D. Wilk"'
Publikováno v:
International Journal of High Speed Electronics and Systems. 14:791-796
We report on a GaN metal-oxide-semiconductor high electron mobility transistor (MOS-HEMT) using atomic layer deposition (ALD) Al 2 O 3 film as a gate dielectric and for surface passivation simultaneously. Compared to the conventional AlGaN/GaN HEMT o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::010c273f846a905aa834f3ff172e8ce3
https://doi.org/10.1142/s0129156404002843
https://doi.org/10.1142/s0129156404002843
Autor:
K.K. Ng, M. Sergent, B. Yang, Hans-J. Gossmann, Joseph Petrus Mannaerts, G. D. Wilk, Peide D. Ye, J. Kwo, Minghwei Hong, M.R. Frei, J. Bude
Publikováno v:
Journal of Electronic Materials. 33:912-915
We demonstrate GaAs-based, metal-oxide-semiconductor field-effect transistors (MOSFETs) with excellent performance using an Al2O3 gate dielectric, deposited by atomic layer deposition (ALD). This achievement is very significant because Al2O3 possesse
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::380758612083f19701f0355879904551
https://doi.org/10.1007/s11664-004-0220-9
https://doi.org/10.1007/s11664-004-0220-9
Publikováno v:
Journal of Applied Physics. 94:928-934
We report on the thermal decomposition of uncapped, ultrathin HfO2 films grown by chemical vapor deposition on SiO2/Si(100) substrates. Medium energy ion scattering, x-ray photoelectron spectroscopy, scanning electron microscopy and atomic force micr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::89a379810111f38142c63b6a4c8619a5
https://doi.org/10.1063/1.1578525
https://doi.org/10.1063/1.1578525
Autor:
F. Cosandey, Torgny Gustafsson, Safak Sayan, Eric Garfunkel, B. W. Busch, W. H. Schulte, S. Aravamudhan, G. D. Wilk
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 20:507-512
HfO2 films were grown on Si(100) by chemical vapor deposition as an attempt to develop an industrially straightforward gate dielectric deposition process. During deposition at ∼400 °C the decomposition of the hafnium-tetra-tert-butoxide Hf(C4H9O)4
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1b35424c7e2aaba3c217bc92e4af92ca
https://doi.org/10.1116/1.1450584
https://doi.org/10.1116/1.1450584
Publikováno v:
Journal of Applied Physics. 89:5243-5275
Many materials systems are currently under consideration as potential replacements for SiO2 as the gate dielectric material for sub-0.1 μm complementary metal–oxide–semiconductor (CMOS) technology. A systematic consideration of the required prop
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::37b808d1fbd689cec9d0c5326e3b4a9a
https://doi.org/10.1063/1.1361065
https://doi.org/10.1063/1.1361065
Autor:
D. C. Gilmer, Jeffrey T. Roberts, Daniel G. Colombo, Charles J. Taylor, Stephen A. Campbell, G. D. Wilk, Wayne L. Gladfelter
Publikováno v:
Journal of the American Chemical Society. 121:5220-5229
A side-by-side comparison of the TiO2 deposition kinetics and the corresponding microstructures was studied. The two precursors were titanium(IV) isopropoxide and anhydrous titanium(IV) nitrate, and all depositions were conducted at low pressures (
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::829876bc4144f0f6cbf40724798456c7
https://doi.org/10.1021/ja984446f
https://doi.org/10.1021/ja984446f
Publikováno v:
Applied Physics Letters. 84:434-436
Recently, significant progress has been made on GaAs metal-oxide-semiconductor field-effect transistors (MOSFETs) using atomic-layer deposition (ALD)-grown Al2O3 as gate dielectric. We show here that further improvement can be achieved by inserting a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fb9d2b32bb7c75b5344e18b96fdde06a
https://doi.org/10.1063/1.1641527
https://doi.org/10.1063/1.1641527
Autor:
K. K. Ng, B. Yang, J. Kwo, Peide D. Ye, S. N. G. Chu, J. Bude, Joseph Petrus Mannaerts, S. Nakahara, G. D. Wilk, Minghwei Hong, H.-J. Gossmann
Publikováno v:
Applied Physics Letters. 83:180-182
A GaAs metal–oxide–semiconductor field-effect transistor (MOSFET) with thin Al2O3 gate dielectric in nanometer (nm) range grown by atomic layer deposition is demonstrated. The nm-thin oxide layer with significant gate leakage current suppression
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c38df0abd5ce537a068fd201ea40a4a9
https://doi.org/10.1063/1.1590743
https://doi.org/10.1063/1.1590743
Autor:
K.K. Ng, Peide D. Ye, Joseph Petrus Mannaerts, M.R. Frei, H.-J.L. Gossmann, S.N.G. Chu, M. Sergent, Minghwei Hong, J. Kwo, G. D. Wilk, J. Bude, B. Yang
Publikováno v:
IEEE Electron Device Letters. 24:209-211
For the first time, a III-V compound semiconductor MOSFET with the gate dielectric grown by atomic layer deposition (ALD) is demonstrated. The novel application of the ALD process on III-V compound semiconductors affords tremendous functionality and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7a7dbd8ace721865f2ff0bbb9e2d6768
https://doi.org/10.1109/led.2003.812144
https://doi.org/10.1109/led.2003.812144
Autor:
G. D. Wilk, Hao Gong, Petri Räisänen, M. E. Loomans, B. Busch, S. K. Lahiri, M.-Y. Ho, W.H. Lin, Torgny Gustafsson, Alex See, Martin L. Green
Publikováno v:
Applied Physics Letters. 81:4218-4220
We demonstrate significantly improved thermal stability of the amorphous phase for hafnium-based gate dielectrics through the controlled addition of Al2O3. The (HfO2)x(Al2O3)1−x films, deposited using atomic layer deposition, exhibit excellent cont
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f63a5267a95481d0f5c094295f41243b
https://doi.org/10.1063/1.1522826
https://doi.org/10.1063/1.1522826