Zobrazeno 1 - 10
of 60
pro vyhledávání: '"G. D. Watkins"'
Publikováno v:
Journal of Applied Physics. 81:1109-1115
Preferential alignment is produced for the NL8 thermal double donors (TDDs) when uniaxial stress is applied during their formation at ∼450 °C. The recovery kinetics reveal that they can reorient readily on the time scale of their lifetime and thei
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ba07411e7c64c7f813229b987d46f531
https://doi.org/10.1063/1.363854
https://doi.org/10.1063/1.363854
Publikováno v:
Physical Review B. 71
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::198a993d35edce68c9c8b32b8ae10b58
https://doi.org/10.1103/physrevb.71.115205
https://doi.org/10.1103/physrevb.71.115205
Publikováno v:
Applied Physics Letters. 60:718-720
Arsenic antisites in GaAs layers grown by molecular‐beam epitaxy at low substrate temperatures (∼200 °C) were observed using electron paramagnetic resonance (EPR), magnetic circular dichroism in absorption (MCDA), and MCDA‐detected EPR. This o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4803a8bada74fabacdc31090a2d7b203
https://doi.org/10.1063/1.106548
https://doi.org/10.1063/1.106548
Autor:
G. D. Watkins, X. D. Zhan
Publikováno v:
Applied Physics Letters. 58:2144-2146
Two new electron paramagnetic resonance centers are reported, Si‐L8 and Si‐L9, which are identified with the stable and one of the four metastable configurations, respectively, of a multistable defect recently discovered by deep level transient c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cbcd9d3dc79707a72c504a699c3ee2a3
https://doi.org/10.1063/1.104987
https://doi.org/10.1063/1.104987
Autor:
G. D. Watkins
Publikováno v:
Early Stages of Oxygen Precipitation in Silicon ISBN: 9789401066457
Although the primary concern relating to a defect in a semiconductor is apt to be the effect it has on the electrical properties of the material, the experimental techniques of choice to identify it, to determine its structure, and unravel its role i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9550fb3b47e9fa4ed444c31f419a61d4
https://doi.org/10.1007/978-94-009-0355-5_1
https://doi.org/10.1007/978-94-009-0355-5_1
Autor:
James William Bray, G. D. Watkins, Israel S. Jacobs, Jill C. Bonner, H. R. Hart, J. S. Kasper, Leonard V. Interrante, Daniel E. Prober
Publikováno v:
Physical Review B. 14:3036-3051
The spin-Peierls transition is considered as a progressive spin-lattice dimerization occurring below a transition temperature in a system of one-dimensional antiferromagnetic Heisenberg chains. In the simplest theories, the transition is second order
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::680ae9e5d7fc7191ec1497bd1e1049f1
https://doi.org/10.1103/physrevb.14.3036
https://doi.org/10.1103/physrevb.14.3036
Autor:
G. D. Watkins
Publikováno v:
Physical Review B. 12:4383-4390
An EPR spectrum, labeled Si-G29, is identified as a lattice vacancy trapped by substitutional tin. The resulting tin-vacancy pair is observed in its neutral ground state with S = 1. Results of studies on wavelength of illumination indicate that it ha
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::07dd225429f17b576c2768d4da56630c
https://doi.org/10.1103/physrevb.12.4383
https://doi.org/10.1103/physrevb.12.4383
Autor:
G. D. Watkins
Publikováno v:
Physical Review B. 12:5824-5839
An EPR spectrum, labeled Si-$G28$, is identified as arising from neutral interstitial boron in silicon. It is produced by 1.5-MeV electron irradiation at 20.4\ifmmode^\circ\else\textdegree\fi{}K, presumably when a substitutional boron atom traps a mo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cdbe31c32c94ea674de86025fde01101
https://doi.org/10.1103/physrevb.12.5824
https://doi.org/10.1103/physrevb.12.5824
Publikováno v:
physica status solidi (b). 63:131-137
LCAO-MO cluster calculations based on the extended Huckel theory are carried out for boron and nitrogen atoms in various interstitial configurations in the diamond lattice. The results favor the (100) split interstitial configuration for both the bor
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5911a9ca2702e6ff13d6d5026e31f94f
https://doi.org/10.1002/pssb.2220630112
https://doi.org/10.1002/pssb.2220630112
Autor:
G. D. Watkins
Publikováno v:
Radiation Effects and Defects in Solids. :487-500
Two optical absorption bands are identified as arising from the negative charge state of each of the P-, As-, and Sb-vacancy pairs in silicon. The more prominent band for each is at 6150, 6000, and 5500 cm−1, respectively. A second broader partiall
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d475ccdea3aeb45bf503e65562ce753f
https://doi.org/10.1080/10420158908213023
https://doi.org/10.1080/10420158908213023