Zobrazeno 1 - 10
of 15
pro vyhledávání: '"G. D. U'Ren"'
Publikováno v:
Thin Solid Films. 365:147-150
Selective epitaxy of Si 1− x Ge x /Si(100) via gas-source molecular beam epitaxy was carried out to compare facet formations in Si 1− x Ge x to Si. A single {311} facet with a pronounced cusp at the intersection with the (100) surface was observe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b5348159c29485a8577824dffd81fcf6
https://doi.org/10.1016/s0040-6090(99)01114-1
https://doi.org/10.1016/s0040-6090(99)01114-1
Autor:
G. D. U’Ren, S. E. Lindo, Jim Moreland, Mark S. Goorsky, T. Magee, Dwain Oster, Hiroaki Fukuto, Petra Feichtinger
Publikováno v:
Journal of Crystal Growth. 209:716-723
We investigated the misfit dislocation nucleation in lightly boron-doped silicon epitaxial layers deposited by vapor-phase epitaxy at 1080°C–1150°C on heavily boron-doped substrates. The substrate resistivity was 4 mΩ cm which produced a misfit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5c70429c401038032c3bcd9257c7bfd7
https://doi.org/10.1016/s0022-0248(99)00632-6
https://doi.org/10.1016/s0022-0248(99)00632-6
Autor:
G. D. U’Ren, Leslie A. Kolodziejski, Gale S. Petrich, E. M. Koontz, Henry I. Smith, M. H. Lim, Mark S. Goorsky
Publikováno v:
Journal of Crystal Growth. :1104-1110
Integrated optical devices, such as planar waveguide-coupled Bragg-resonant filters, are an important component for the implementation of high density, narrow bandwidth optical filtering in wavelength division multiplexed optical communication system
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::381679030ed7f461c0a34be37c530c1c
https://doi.org/10.1016/s0022-0248(98)01226-3
https://doi.org/10.1016/s0022-0248(98)01226-3
Publikováno v:
Journal of Physics D: Applied Physics. 32:A8-A11
We examined GaAs/In0.05Ga0.95As/GaAs structures to quantify the relationship between misfit dislocation densities and the intensity of satellite peaks adjacent to the epitaxial layer Bragg reflections. Triple-axis x-ray diffraction rocking curves, do
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::368b54eb84da6ad53b674a5aa41acb09
https://doi.org/10.1088/0022-3727/32/10a/302
https://doi.org/10.1088/0022-3727/32/10a/302
Autor:
Dawen Wang, Mark S. Goorsky, G. D. U’Ren, Qi Xiang, Kang L. Wang, Shaozhong Li, Kunihiro Sakamoto
Publikováno v:
Journal of Crystal Growth. :469-472
The facet formation and inter-facet mass transport in selective epitaxial growth (SEG) of Si on SiO 2 -masked growth windows aligned along [1 1 0] and [1 0 0] directions on Si(1 1 0) substrates by Si gas-source molecular-beam epitaxy were studied. Fo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7fc0fd0d8026657cca6f215332e8613e
https://doi.org/10.1016/s0022-0248(96)01217-1
https://doi.org/10.1016/s0022-0248(96)01217-1
Publikováno v:
Applied Physics Letters. 76:2680-2682
We report on the growth and characterization of high-quality strain-relaxed SiGe alloys on a compliant silicon–on–insulator (SOI) substrate. The annealing temperature required for strain transfer has been reduced through boron implantation to the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::510e1e1f06b8a3290e975e73a563c149
https://doi.org/10.1063/1.126442
https://doi.org/10.1063/1.126442
Autor:
Yi Luo, Kang L. Wang, C. D. Moore, S. G. Thomas, Mark S. Goorsky, Jianlin Liu, G. Jin, G. D. U’Ren, Yunfeng Lu
Publikováno v:
Applied Physics Letters. 75:1586-1588
A method to grow a relaxed Si0.5Ge0.5 graded layer with a very smooth surface and a very low threading dislocation density using solid-source molecular-beam epitaxy is reported. This method included the use of Sb as a surfactant for the growth of a 2
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::265ae13f12f2acb866e6723ab42398b1
https://doi.org/10.1063/1.124762
https://doi.org/10.1063/1.124762
Autor:
K. Matney, Leslie A. Kolodziejski, E. M. Koontz, Henry I. Smith, Mark S. Goorsky, M. H. Lim, Vincent V. Wong, G. D. U’Ren, Gale S. Petrich
Publikováno v:
Applied Physics Letters. 71:1400-1402
The ability to preserve a grating profile during epitaxial overgrowth is vital to the design and operation of devices such as planar waveguide-coupled Bragg-resonant filters. Intentional preservation of rectangular-patterned InP gratings during gas s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3683fb5c11a25205a032680faa6ceb2f
https://doi.org/10.1063/1.119905
https://doi.org/10.1063/1.119905
Publikováno v:
Applied Physics Letters. 69:1089-1091
Three distinct etch pit features in ZnSe based epitaxial layers have been identified. The features were observed with optical dark field microscopy and confirmed to be pits using scanning electron microscopy. Using transmission electron microscopy, w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d1e1ed4b63a816ba406cbd45cb7a3aa2
https://doi.org/10.1063/1.117067
https://doi.org/10.1063/1.117067
Publikováno v:
IEEE Photonics Technology Letters. 8:263-265
We present the measurements of room-temperature electroabsorption in CdZnSSe-ZnSSe semiconductor quantum wells that exhibit prominent excitonic absorption peaks in the wavelength region around 500 nm. The electroabsorption of these wide-band-gap quan
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0cca9fc1c824ea643b96d8dc4a74a4ec
https://doi.org/10.1109/68.484261
https://doi.org/10.1109/68.484261