Zobrazeno 1 - 4
of 4
pro vyhledávání: '"G. D. Mokhov"'
Publikováno v:
Soviet Physics Journal. 10:1-5
The results of an investigation into the photoconductivity of amorphous silicon films at low excitation levels are given. The number of peculiarities are explained by nonuniformity of the semiconducting layer and also by the presence of a photodiode
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d62e6ddfc71b24fdf38e6ddd1a1f6165
https://doi.org/10.1007/bf00819781
https://doi.org/10.1007/bf00819781
Publikováno v:
Soviet Physics Journal. 10:84-85
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::740d413ac866ed4b418e82ab3e506caa
https://doi.org/10.1007/bf00843577
https://doi.org/10.1007/bf00843577
Autor:
G. D. Mokhov, V. A. Bazakutsa
Publikováno v:
Soviet Physics Journal. 10:88-89
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::67793f5dae9106846ec028f0b447f568
https://doi.org/10.1007/bf00819770
https://doi.org/10.1007/bf00819770
Publikováno v:
Soviet Physics Journal. 9:112-113
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eb063792d879af0a735e7b470fa0807b
https://doi.org/10.1007/bf00818509
https://doi.org/10.1007/bf00818509