Zobrazeno 1 - 10
of 69
pro vyhledávání: '"G. D. Ivlev"'
Publikováno v:
Pribory i Metody Izmerenij, Vol 0, Iss 2, Pp 90-94 (2015)
The results of measuring the temperature in a platinum filament tape, pre-heated in vacuum by direct current and irradiated a millisecond laser pulse, are presented. Gradual increase of the previous heating at a constant power irradiation density all
Externí odkaz:
https://doaj.org/article/725b9819bff74ba99cf8f0b16d142030
Autor:
A. V. Mudryi, V. D. Zhivulko, F. Mofidnakhaei, G. D. Ivlev, M. V. Yakushev, R. W. Martin, A. V. Dvurechenskii, V. A. Zinovyev, Zh. V. Smagina, P. A. Kuchinskaja
Publikováno v:
Pribory i Metody Izmerenij, Vol 0, Iss 1, Pp 38-45 (2015)
The efficient electroluminescence in the region of band-to-band (1,1 eV) and dislocationrelated (D1 – 0,8 eV) transitions has been detected from Si p-n structures at room and liquid nitrogen temperatures. It was found that dislocation-related lumin
Externí odkaz:
https://doaj.org/article/393468440e0a41e78c0dfb41243de808
Autor:
F. F. Komarov, I. N. Parkhomenko, O. V. Mil’chanin, G. D. Ivlev, L. A. Vlasukova, Yu. Żuk, A. A. Tsivako, N. S. Koval’chuk
Publikováno v:
Optics and Spectroscopy. 129:1114-1124
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fc264e815d0e8f170e49e4d0059aa047
https://doi.org/10.1134/s0030400x21080105
https://doi.org/10.1134/s0030400x21080105
Publikováno v:
Optics and Spectroscopy. 128:141-147
The spectral dependences (λ = 0.35–1.0 μm) of transmittance and reflectance R of binary TiAlN nitride thin films deposited by magnetron sputtering of the target on glass substrates and on Si wafers have been measured. TiAlN/Si films 0.5 μm thick
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4754cb2e38279cbb9c553e9818d3bbaf
https://doi.org/10.1134/s0030400x20010117
https://doi.org/10.1134/s0030400x20010117
Autor:
Irina N. Parkhomenko, N. S. Nechaev, L. A. Vlasukova, A. F. Komarov, G. M. Zayats, Elke Wendler, G. D. Ivlev, S. A. Miskiewicz, F. F. Komarov
Publikováno v:
Acta Physica Polonica A. 136:254-259
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0dd7cc90d10b591b04c4e060928db87f
https://doi.org/10.12693/aphyspola.136.254
https://doi.org/10.12693/aphyspola.136.254
Autor:
G. D. Ivlev, F. F. Komarov, I. A. Romanov, M. A. Makhavikou, V. Zhivulko, D. V. Shuleiko, F. V. Kashaev, A. V. Mudryi, L. A. Vlasukova, Irina N. Parkhomenko, N. S. Kovalchuk
Publikováno v:
Proceedings of the National Academy of Sciences of Belarus. Physics and Mathematics Series. 55:225-231
The light-emitting properties of Si-rich silicon nitride films deposited on the Si (100) substrate by plasma-enhanced (PECVD) and low-pressure chemical vapor deposition (LPCVD) have been investigated. In spite of the similar stoichiometry (SiN1.1), n
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::455c4a46f15b374c05a9471f2608c7d6
https://doi.org/10.29235/1561-2430-2019-55-2-225-231
https://doi.org/10.29235/1561-2430-2019-55-2-225-231
Autor:
G. D. Ivlev, S. Gusakova, S. L. Prokopyev, Vladimir A. Volodin, G. K. Krivyakin, Alexey A. Popov
Publikováno v:
Semiconductors. 53:400-405
The processes of the crystallization of amorphous germanium films and multilayer germanium/silicon structures upon exposure to nanosecond (70 ns) ruby laser radiation (λ = 694 nm) are studied. The samples are grown on silicon and glassy substrates b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1082b20d6ca4906223b6d62afc84702f
https://doi.org/10.1134/s1063782619030217
https://doi.org/10.1134/s1063782619030217
Autor:
R. I. Batalov, G. D. Ivlev, V. I. Nuzhdin, N. I. Nurgazizov, V. F. Valeev, Andrey L. Stepanov, Anastas A. Bukharaev
Publikováno v:
Optics and Spectroscopy. 126:144-149
Structural and photoelectric properties of composite Ag:Si layers formed in the near-surface area of a single-crystal c-Si substrate by a high-dose implantation of Ag+ ions with subsequent pulsed laser annealing (PLA) have been studied. It has been e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::59b1365dd2fb4f5cb6d28cf93a232ff3
https://doi.org/10.1134/s0030400x19020061
https://doi.org/10.1134/s0030400x19020061
Autor:
R. I. Batalov, R. M. Bayazitov, G. D. Ivlev, V. F. Valeev, Yu. N. Osin, Anastas A. Bukharaev, Andrey L. Stepanov, D. A. Bizyaev, V. I. Nuzhdin, V. V. Vorob’ev
Publikováno v:
Optics and Spectroscopy. 125:571-577
With the purpose of creating a thin composite layer of Ag:Si containing Ag nanoparticles (NPs), the effect of a nanosecond pulse produced by ruby laser (λ = 0.694 µm) on single-crystal c-Si implanted with a high dose of Ag+ ions is studied. The pul
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8b62ea8fdb73478d5830edd61892c7eb
https://doi.org/10.1134/s0030400x18100065
https://doi.org/10.1134/s0030400x18100065
Autor:
H. A. Novikov, G. D. Ivlev, R. I. Batalov, I. A. Faizrakhmanov, R. M. Bayazitov, V. A. Shustov
Publikováno v:
Russian Microelectronics. 47:354-363
To produce heavily doped epitaxial layers, amorphous Ge:Sb films with a thickness of 150 and 300 nm are vacuum-deposited on Ge substrates and are exposed to pulsed nanosecond irradiation of high-power laser (λ = 0.69 μm) or ion (C+ or H+) beams. In
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b8b6bd2bf7d82f398bdfacf0d60bc37e
https://doi.org/10.1134/s1063739718050025
https://doi.org/10.1134/s1063739718050025