Zobrazeno 1 - 10
of 26
pro vyhledávání: '"G. D. Guth"'
Autor:
S.P. Hui, L.A. D'Asaro, Gabriela Livescu, Marlin W. Focht, Anthony L. Lentine, R.E. Leibenguth, G. D. Guth, Thomas J. Cloonan, K.G. Glogovsky, Joseph Michael Freund, L.M.F. Chirovsky, R.A. Novotny, T.K. Woodward
Publikováno v:
IEEE Photonics Technology Letters. 6:1126-1129
We describe a 4 by 4 array of embedded control two input, one output optoelectronic switching nodes based on the field effect transistor self electro-optic effect device (FET-SEED) technology. The arrays have electrical fan-out to remove the loss ass
Autor:
F.F. Judd, G. D. Guth, Moses T. Asom, Robert A. Morgan, Marlin W. Focht, T. Mullally, C. Zimmer, Joseph Michael Freund, K.G. Glogovky, R.E. Leibenguth
Publikováno v:
IEEE Photonics Technology Letters. 6:913-917
We present the design, fabrication, and demonstration of a 10/spl times/10 matrix-addressed vertical-cavity top-surface-emitting laser (VCSEL) array. These arrays are batch-fabricated from full 3-in diameter GaAs/AlGaAs wafers. We show that no perfor
Autor:
Anthony L. Lentine, Marlin W. Focht, L.A. D'Asaro, R.E. Leibenguth, R.A. Novotny, L.E. Smith, T.K. Woodward, L.M.F. Chirovsky, G. D. Guth, S. Hui
Publikováno v:
Proceedings of IEE/LEOS Summer Topical Meetings: Integrated Optoelectronics.
Autor:
M. W. Focht, Robert A. Morgan, T. Mullally, Demetrios N. Christodoulides, M.T. Asom, Jeffrey M. Catchmark, G. D. Guth
Publikováno v:
Electronics Letters. 30:2136-2138
Greater than 150°C CW lasing is achieved from an unbonded GaAs/AlGaAs VCSEL by employing high barrier confinement spacers and by blue shifting the optical gain. This is done while maintaining a variation in threshold current of only ±0.93 mA over a
Publikováno v:
Proceedings of LEOS '93.
Multiple transverse mode vertical cavity surface emitting lasers (MTM VCSEL) have been mostly overlooked as possible sources for optical communications. This is understandably so for applications that involve long haul transmission over single mode f
Autor:
M.T. Asom, Robert A. Morgan, G.Z. Pan, K. Kojima, G. D. Guth, Mario Dagenais, R.E. Leibenguth, Shijun Jiang, M.W. Focht
Publikováno v:
Proceedings of LEOS '93.
We report the first observation of bistable polarization switching in a vertical cavity surface-emitting GaAs/AlGaAs laser (VCSEL) under optical injection. Input wavelength dependence of the switching is studied. Polarization switching at frequencies
Autor:
Robert A. Morgan, Keisuke Kojima, Z. George Pan, Ronald E. Leibenguth, Moses T. Asom, Mario Dagenais, G. D. Guth, Shijun Jiang, Marlin W. Focht
Publikováno v:
Applied Physics Letters. 63:2999-3001
We report the observation of bistable polarization switching in a vertical‐cavity surface‐emitting laser under optical injection. The wavelength dependence of the switching is measured. It is found that this polarization switching is achieved thr
Autor:
Robert A. Morgan, Marlin W. Focht, Moses T. Asom, T. Mullally, G. D. Guth, Keisuke Kojima, Ronald E. Leibenguth
Publikováno v:
Applied Physics Letters. 61:1160-1162
We demonstrate record high pulsed output power exceeding 530 mW from an electrically pumped phase‐coupled 8×8 vertical cavity surface emitting laser array (SELA) at room temperature. Three array types are compared: an 8×8 pixellated SELA(PSELA),
Autor:
L.M.F. Chirovsky, G. D. Guth, Joseph Michael Freund, L. E. Smith, G. J. Przybylek, Anthony L. Lentine, Marlin W. Focht, Ronald E. Leibenguth
Publikováno v:
Applied Physics Letters. 60:1809-1811
We describe symmetric self‐electro‐optic effect devices (S‐SEEDs) with clamping diodes connected to the center node of the devices to ensure both diodes of the S‐SEEDs have an electric field across them at all times. These diode‐clamped S
Autor:
K.G. Glogovsky, L.M.F. Chirovsky, G. J. Przybylek, G. D. Guth, Moses T. Asom, L. E. Smith, Marlin W. Focht, Keith W. Goossen, Robert A. Morgan
Publikováno v:
Applied Physics Letters. 59:1049-1051
Symmetric self‐electro‐optic effect devices (S‐SEEDs) using extremely shallow GaAs/Al0.04Ga0.96As multiple quantum wells are demonstrated. By exploiting mainly exciton ionization, rather than the usual quantum‐confined Stark shift, room‐tem