Zobrazeno 1 - 10
of 25
pro vyhledávání: '"G. D. Gilliland"'
Autor:
J. Martinsen, G. D. Gilliland, Rama Venkatasubramanian, D. J. Wolford, John F. Klem, H. P. Hjalmarson, S. K. Ghandhi, J. A. Bradley, C. F. Tsang, Thomas F. Kuech
Publikováno v:
Gallium Arsenide and Related Compounds 1991
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8030023e0d64433f871bc60cac6f7edb
https://doi.org/10.1201/9781003069638-76
https://doi.org/10.1201/9781003069638-76
Publikováno v:
Physical Review B. 60:15980-15984
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1fb289b2a84eaa5dcfb99870221eaba4
https://doi.org/10.1103/physrevb.60.15980
https://doi.org/10.1103/physrevb.60.15980
Autor:
Zhe Chuan Feng, D. J. Wolford, G. D. Gilliland, Matthew J. Schurman, D. G. Chtchekine, S. J. Chua, S. E. Ralph, Ian T. Ferguson
Publikováno v:
Scopus-Elsevier
The dissociation channels of two prominent bound exciton complexes in wurtzite GaN thin films are determined via an extensive temperature dependent photoluminescence study. The shallow donor bound exciton dissociation at low temperatures (T ≤ 50 K)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a576615da6a95650f3f48caefad23161
https://doi.org/10.1557/s1092578300003331
https://doi.org/10.1557/s1092578300003331
Publikováno v:
Physical Review B. 58:10687-10691
A phenomenological theory describing the exciton photoluminescence ~PL! kinetics in type-II superlattices is proposed herein, which takes into account both the intrinsic exciton radiative decay and nonradiative decay due to exciton trapping by interf
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8d5c2b45ec715cacb62710d054690d4a
https://doi.org/10.1103/physrevb.58.10687
https://doi.org/10.1103/physrevb.58.10687
Autor:
G. D. Gilliland, G. A. Northrop, Thomas F. Kuech, J. A. Bradley, D. J. Wolford, M. S. Petrovic, Leigh M. Smith, H. P. Hjalmarson
Publikováno v:
Physical Review B. 58:4728-4732
Using a time-resolved photoluminescence imaging technique with high spectral, temporal, and spatial resolution, we have directly measured the time- and carrier-density-dependent heterointerfacial band bending in GaAs/Al{sub x}Ga{sub 1{minus}x}As stru
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e203c21907d3daf4bcc1cfddabe329b5
https://doi.org/10.1103/physrevb.58.4728
https://doi.org/10.1103/physrevb.58.4728
Autor:
T. Chang, G. D. Gilliland, Y. H. Kao, John F. Klem, M. Hafich, Yun-Liang Soo, S. Huang, L. P. Fu, Z. H. Ming
Publikováno v:
Modern Physics Letters B. 11:1057-1067
A series of type-II GaAs/AlAs superlattices epitaxially grown with different interrupts have been investigated using the techniques of grazing incidence X-ray scattering and diffraction. The interrupts are specifically designed to alter the interfaci
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cf1d30e5371f6161f892bbcedc9db480
https://doi.org/10.1142/s0217984997001274
https://doi.org/10.1142/s0217984997001274
Autor:
Hosun Lee, M. G. Craford, H. P. Hjalmarson, D.J. Wolford, L. P. Fu, D. G. Chtchekine, J. G. Yu, G. D. Gilliland
Publikováno v:
IEEE Journal of Quantum Electronics. 33:1123-1131
We have examined the photoluminescence and photoluminescence kinetics of a series of In/sub 1-x/Ga/sub x/P alloys in an effort: 1) to elucidate the electronic structure of the conduction band versus alloy composition, especially near the direct-indir
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::df963fcdaaeb38572bcd6254a78db362
https://doi.org/10.1109/3.594874
https://doi.org/10.1109/3.594874
Autor:
D. G. Chtchekine, Y. Bu, Ming-Chang Lin, F. T. Bacalzo, K. K. Bajaj, Y. Chen, S. R. Stock, S. E. Ralph, G. D. Gilliland, L. P. Fu
Publikováno v:
Journal of Applied Physics. 81:2197-2207
We have grown high-quality GaN films on sapphire using a new nitrogen precursor, hydrazoic acid (HN3). Films were grown at 600 °C on (0001) sapphire substrates in a low-pressure chemical-vapor-deposition system using triethylgallium and hydrazoic ac
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bd38bcdfb75b2793d6ec73f21b5c1c05
https://doi.org/10.1063/1.364253
https://doi.org/10.1063/1.364253
Publikováno v:
Physical Review B. 52:2682-2687
We have measured the time- and space-resolved evolution of type-II excitons in GaAs/AlAs superlattices with various AlAs layer thicknesses, at temperatures ranging from 1.8 to 30 K. Our photoluminescence (PL) time decay and transport results demonstr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c30bcbe139e84baf877c9f444d750c91
https://doi.org/10.1103/physrevb.52.2682
https://doi.org/10.1103/physrevb.52.2682
Autor:
Hosun Lee, K. C. Hsieh, L. P. Fu, M. G. Craford, G. D. Gilliland, Miles V. Klein, David E. Aspnes, J. C. Kim, H. P. Hjalmarson, J. G. Yu
Publikováno v:
Physical Review B. 51:4186-4192
We used room-temperature ellipsometry to study the quasidirect (no-phonon) transitions of disordered ${\mathrm{In}}_{1\mathrm{\ensuremath{-}}\mathit{x}}$${\mathrm{Ga}}_{\mathit{x}}$P/graded GaP near crossover compositions (0.64\ensuremath{\le}x\ensur
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b229489c65b1a61f0546c1f6528baa91
https://doi.org/10.1103/physrevb.51.4186
https://doi.org/10.1103/physrevb.51.4186