Zobrazeno 1 - 10
of 13
pro vyhledávání: '"G. D. Bagratishvili"'
Publikováno v:
Physica Status Solidi (a). 36:73-79
A low-temperature method is described of obtaining MIS-structures of the type Ge3N4–GaAs. Some results are given on the physical properties of the structures. Es wird eine Niedertemperaturmethode zur Erzielung von MIS-Strukturen vom Typ Ge3N4–GaA
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::265891047199943b3e70334a6c8a7c24
https://doi.org/10.1002/pssa.2210360107
https://doi.org/10.1002/pssa.2210360107
Publikováno v:
Physica Status Solidi (a). 78:115-123
A qualitative model of the electronic interaction at the insulator–semiconductor interface is proposed. On the basis of this model a sequence of electron-donor ability of the oxygen and nitrogen atoms in oxides and nitrides of the silicon subgroup
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::53954338ab2b88233af6e9f99349f5b4
https://doi.org/10.1002/pssa.2210780113
https://doi.org/10.1002/pssa.2210780113
Publikováno v:
Physica Status Solidi (a). 78:391-400
The optical and electrical properties of nonstoichiometric germanium oxynitrides and their interfaces with a semiconductor are discussed depending on their composition. The band gap, dielectric constant, and refractive index of the films obtained are
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1fcb938127ded8ce9012c0211391b3c9
https://doi.org/10.1002/pssa.2210780204
https://doi.org/10.1002/pssa.2210780204
Autor:
A. N. Zyuganov, L. V. Piskanovskii, V. N. Mikhelashvili, G. D. Bagratishvili, D. Jishiashvili, Petro Smertenko, R. B. Dzhanelidze
Publikováno v:
Physica Status Solidi (a). 65:701-707
Current-voltage (I–U) curves of the AlGe3N4GaAs strueture are studied depending on the heat treatment conditions. The mechanism of the charge flow through the metal-insulator-semiconductor (MIS) structure is revealed. The contact system parameters
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::39500a97c3f35483cf6e2af0d868420c
https://doi.org/10.1002/pssa.2210650237
https://doi.org/10.1002/pssa.2210650237
Publikováno v:
Physica Status Solidi (a). 56:27-35
The reactive plasma sputtering technique is used to obtain a boron diffusion source in the form of borosilicate glass (BSG). Physlcal and chemical properties of the BSG films are investigated. Diffusion parameters of B in Si and SiO, are obtaincd in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::edf02a59d88f612aa9abb48319b55b17
https://doi.org/10.1002/pssa.2210560103
https://doi.org/10.1002/pssa.2210560103
Autor:
G. V. Tsitsishvili, G. D. Bagratishvili, K. A. Andrianov, L. M. Khananashvili, M. L. Kantariya
Publikováno v:
Bulletin of the Academy of Sciences of the USSR Division of Chemical Science. 11:951-954
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aedf6c7e681afc382da9e4d73face534
https://doi.org/10.1007/bf00905212
https://doi.org/10.1007/bf00905212
Autor:
M. L. Kantariya, L. M. Khananashvili, V. I. Sidorov, G. D. Bagratishvili, G. V. Tsitsishvili, K. A. Andrianov
Publikováno v:
Journal of Organometallic Chemistry. 4:440-445
1. Co-hydrolysis reactions of methylallyldichlorosilane with dimethyldichlorosilane and diethyldichlorosilane have been studied. It is shown that in the co-hydrolysis reaction of methylallyldichlorosilane with dimethyldichlorosilane various eight-mem
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::221fa9079f63116203e015c9b0fc652c
https://doi.org/10.1016/s0022-328x(00)88795-1
https://doi.org/10.1016/s0022-328x(00)88795-1
