Zobrazeno 1 - 10
of 89
pro vyhledávání: '"G. Constantinidis"'
Autor:
Maria Kayambaki, A. Kostopoulos, Matthew Zervos, Alexandros Georgakilas, N. Flytzanis, G. Constantinidis, Spiros Mikroulis
Publikováno v:
physica status solidi (a). 188:259-262
Al x Ga 1-x N/GaN,/Al y Ga 1-y N./GaN double heterojunction field effect transistors with bottom Al y Ga 1-y N barrier widths between 100 and 2000 A and Al contents of y = 0.15-0.3 were grown by radio-frequency molecular beam epitaxy on both n + and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4a835d2edfdc4afa73bc3c201784f569
https://doi.org/10.1002/1521-396x(200111)188:1<259::aid-pssa259>3.0.co
https://doi.org/10.1002/1521-396x(200111)188:1<259::aid-pssa259>3.0.co
Autor:
Pierre Blondy, G. Constantinidis, Romolo Marcelli, D. Dascalu, Dan Neculoiu, Giancarlo Bartolucci, Sergiu Iordanescu, F. Giaccomozzi, George Deligeorgis, Dan Vasilache, M. Lagadas, I. Petrini, Alexandru Muller, C. Buiculescu
Publikováno v:
Journal of Micromechanics and Microengineering. 11:301-305
This paper presents the fabrication processes for micromachined millimetre-wave devices, on two different types of semiconductor substrates. The first process uses micromachining on high-resistivity oriented silicon. A three-layer dielectric membrane
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eeefa3009a38184bed2ab3feed10f344
https://doi.org/10.1088/0960-1317/11/4/302
https://doi.org/10.1088/0960-1317/11/4/302
Autor:
Konstantin Vassilevski, Irina P. Nikitina, Konstantinos Zekentes, Katerina Tsagaraki, G. Constantinidis
Publikováno v:
Materials Science and Engineering: B. 80:370-373
Ohmic contacts to the top p-type layers of 4H-SiC p + –n–n + epitaxial structures having an acceptor concentration lower than 1×10 19 cm −3 were fabricated by the rapid thermal anneal of multilayer Al/Ti/Pt/Ni metal composition. The rapid ther
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2561fb003d3a04d292653fbd4c436659
https://doi.org/10.1016/s0921-5107(00)00597-3
https://doi.org/10.1016/s0921-5107(00)00597-3
Publikováno v:
Materials Science and Engineering: B. 80:257-261
The planar doped barrier diodes are majority carrier devices with technologically controlled barrier height. This paper reviews the main current conducting mechanisms. The limits of the I–V characteristics are described. The design of the device is
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e6fb28135e408b918d388a1ce7b352af
https://doi.org/10.1016/s0921-5107(00)00650-4
https://doi.org/10.1016/s0921-5107(00)00650-4
Autor:
V.Y. Davydov, G. Constantinidis, Jan Kuzmik, M. Calamiotou, M. Androulidaki, A. Cornet, M. Pavelescu, K. Amimer, Francesca Peiró, Jordi Arbiol, Spiros Mikroulis, Katerina Tsagaraki, Alexandros Georgakilas
Publikováno v:
ResearcherID
The material properties of GaN thin films grown by radio frequency (RF) nitrogen plasma source molecular beam epitaxy (MBE) on (0001) Al2O3 substrates have been correlated to the V/III flux ratio during GaN growth and to the type and thickness of the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::582747e185c0cd22390e797086903741
https://doi.org/10.1016/s0921-5107(00)00646-2
https://doi.org/10.1016/s0921-5107(00)00646-2
Autor:
M Adroulidaki, Elias Aperathitis, Katerina Tsagaraki, E Makarona, N. T. Pelekanos, Alexandros Georgakilas, Maria Kayambaki, G. Constantinidis
Publikováno v:
Materials Science in Semiconductor Processing. 3:511-515
The growth and material properties of GaN heteroepitaxial layers on vicinal (1 0 0) and exact (1 1 1)B substrates have been investigated, using molecular beam epitaxy (MBE) with N2 RF-plasma source. We examined the approach to grow GaN directly on th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fb4d511cc646f2f3b4b7d5452cd9cb65
https://doi.org/10.1016/s1369-8001(00)00076-7
https://doi.org/10.1016/s1369-8001(00)00076-7
Publikováno v:
Solid-State Electronics. 44:1173-1177
Low capacitance (≈1.7 pF at zero bias) 4H-SiC p + – n – n + diodes with moderately doped base region (∼10 17 cm −3 ) were fabricated. The diodes had a differential on-resistance less than 3.5 Ω at current density j >9 kA/cm 2 . The corresp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::58b34f341354d3690d2a8e9a76782ce8
https://doi.org/10.1016/s0038-1101(00)00053-8
https://doi.org/10.1016/s0038-1101(00)00053-8
Influence of MBE Growth Temperature on the Properties of Cubic GaN Grown Directly on GaAs Substrates
Autor:
N. T. Pelekanos, K. Amimer, Katerina Tsagaraki, Maria Androulidaki, M. Calamiotou, Alexandros Georgakilas, Béla Pécz, Zs Czigany, G. Constantinidis
Publikováno v:
physica status solidi (a). 176:525-528
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9116f42f02648d5e9daa9374c586585b
https://doi.org/10.1002/(sici)1521-396x(199911)176:1<525::aid-pssa525>3.0.co
https://doi.org/10.1002/(sici)1521-396x(199911)176:1<525::aid-pssa525>3.0.co
Publikováno v:
Materials Science and Engineering: B. :406-410
Despite its structural shortcomings (stacking faults, twins and threading dislocations), 3C-SiC heteroepitaxially grown on Si still has potential for high temperature sensor applications for which stable electrical contacts are of extreme importance.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9b57ab644d0b4df409772450d6b82b28
https://doi.org/10.1016/s0921-5107(98)00543-1
https://doi.org/10.1016/s0921-5107(98)00543-1