Zobrazeno 1 - 10
of 26
pro vyhledávání: '"G. Chindalore"'
Publikováno v:
IEEE Transactions on Electron Devices. 46:1290-1294
Experimental results for the MOS electron and hole accumulation layer mobilities (/spl mu//sub acc/), measured for a wide range of doping concentrations (1/spl times/10/sup 16/ cm/sup -3/-4/spl times/10/sup 17/ cm/sup -3/) and at temperatures ranging
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::098c1ebaa007169a1702483c43f6234c
https://doi.org/10.1109/16.766900
https://doi.org/10.1109/16.766900
Autor:
Haihong Wang, Wei-Kai Shih, G. Chindalore, S. Mudanai, Sanjay K. Banerjee, A.F. Tasch, Q. Ouyang, C.M. Maziar
Publikováno v:
IEEE Transactions on Electron Devices. 46:1749-1759
We present new physically based effective mobility models for both electrons and holes in MOS accumulation layers. These models take into account carrier-carrier scattering, in addition to surface roughness scattering, phonon and fixed interface char
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c269056e56b8b8ad8f029f3bf880e7f9
https://doi.org/10.1109/16.777166
https://doi.org/10.1109/16.777166
Autor:
Al F. Tasch, M. Manassian, Christine M. Maziar, Haihong Wang, G. Chindalore, S. Jallepalli, S.A. Hareland, W.-K. Shih
Publikováno v:
IEEE Transactions on Electron Devices. 45:1487-1493
In this paper, models appropriate for device simulators are developed which account for the quantum mechanical nature of accumulated regions. Accumulation layer quantization is important in deep submicron (/spl les/0.25 /spl mu/m) MOS devices in the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d71e30bd40b45e2976fd878561352116
https://doi.org/10.1109/16.701479
https://doi.org/10.1109/16.701479
Autor:
Al F. Tasch, W.-K. Shih, Christine M. Maziar, G. Chindalore, S.A. Hareland, S. Jallepalli, Haihong Wang
Publikováno v:
IEEE Transactions on Electron Devices. 45:179-186
As MOS devices have been successfully scaled to smaller feature sizes, thinner gate oxides and higher levels of channel doping have been used in order to simultaneously satisfy the need for high drive currents and minimal short-channel effects. With
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3e35b8122e8e0079c6dc77e4f9e59fe8
https://doi.org/10.1109/16.658828
https://doi.org/10.1109/16.658828
Publikováno v:
IEEE Transactions on Electron Devices. 47:643-645
This work presents for the first time experimental results for the extraction of the increase in the effective electrical oxide thickness (/spl Delta/t/sub ox/=t/sub ox,expt/-t/sub ox,physical/) in MOS accumulation layers with heavily doped substrate
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::71c46186b8363cb2d135adfa312317ae
https://doi.org/10.1109/16.824741
https://doi.org/10.1109/16.824741
Autor:
S. Smith, Al F. Tasch, G. Chindalore, Christine M. Maziar, S.A. Hareland, V.K.F. Chia, S. Jallepalli
Publikováno v:
IEEE Electron Device Letters. 18:206-208
The authors report for the first time, accurately extracted experimental data for the threshold voltage shift (/spl Delta/V/sub T/) due to quantum mechanical (QM) effects in hole inversion layers in MOS devices, Additional experimental results are pr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bd1d06ffb8eaa1b481d2f759a7af4d1c
https://doi.org/10.1109/55.568765
https://doi.org/10.1109/55.568765
Autor:
Al F. Tasch, W.-K. Shih, G. Chindalore, S.A. Hareland, C. Wang, Christine M. Maziar, J.B. McKeon
Publikováno v:
IEEE Electron Device Letters. 18:200-202
This letter presents for the first time, the experimentally determined majority carrier mobilities in the accumulation layer of a MOSFET for both p-type and n-type channel doping for a wide range of doping concentrations. The measured carrier mobilit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c956dfc357137317f5bf7eb56f909342
https://doi.org/10.1109/55.568762
https://doi.org/10.1109/55.568762
Temperature characterization and modeling of electron and hole mobilities in MOS accumulation layers
Publikováno v:
56th Annual Device Research Conference Digest (Cat. No.98TH8373).
The need to understand and predict MOS accumulation layer mobility has become increasingly important as MOS devices scale to the 100 nm gate length range. Indeed, the accumulation layer in the shallow source/drain extension in MOSFETs is becoming a s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4f41d457f91206353f790463381fbb2a
https://doi.org/10.1109/drc.1998.731104
https://doi.org/10.1109/drc.1998.731104
Autor:
A.F. Fasch, S.A. Hareland, Christine M. Maziar, S. Smith, V.K.F. Chia, G. Chindalore, S. Jallepalli
Publikováno v:
1997 IEEE International Conference on Microelectronic Test Structures Proceedings.
This paper reports the test structure and methodology that has been developed to experimentally extract the threshold voltage shifts due to quantum mechanical (QM) effects in both electron and hole MOS inversion layers. Compared to classical calculat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a5aac2497e071e76ae12afeec86d200b
https://doi.org/10.1109/icmts.1997.589377
https://doi.org/10.1109/icmts.1997.589377
Publikováno v:
IEEE Transactions on Electron Devices. 44:1172-1173
The effects of quantization of the inversion layer of MOSFET devices is an area of increasing importance as technology is aggressively scaled below 0.25 /spl mu/m. Although electron inversion layers have attracted considerable interest, very little w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b4b67e2a989c65d5a10af37e8063ea40
https://doi.org/10.1109/16.595947
https://doi.org/10.1109/16.595947