Zobrazeno 1 - 10
of 116
pro vyhledávání: '"G. Cellere"'
Autor:
C. S. Dyer, K. A. Ryden, P. A. Morris, A. D. P. Hands, P. J. McNulty, J. -R. Vaille, L. Dusseau, G. Cellere, A. Paccagnella, H. J. Barnaby, A. R. Benedetto, R. Velazco, R. Possamai Bastos, D. Brewer, J. L. Barth, K. A. LaBel, M. J. Campola, Y. Zheng, M. A. Xapsos
Publikováno v:
IEEE Transactions on Nuclear Science. 70:200-215
Akademický článek
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Publikováno v:
IEEE Transactions on Nuclear Science. 53:1813-1818
We are showing for the first time the charge loss due to heavy ion irradiation on Flash memory arrays organized following the NAND architecture. Results complement those previously found for devices featuring a NOR architecture: large charge loss can
Autor:
Michael Fennell, L. Call, R. Perez, D. Stroebel, A. Paccagnella, J. Reneau, M. Crisler, Kelvin F. Poole, M.G. Randall, G. Cellere, P.J. McNulty
Publikováno v:
IEEE Transactions on Nuclear Science. 52:2597-2601
The dynamic range and resolution of dosimeters based on floating-gate transistors with electronic readout can be significantly improved by simple changes in the readout process and an increase in the number of memory cells used. The new procedure is
Publikováno v:
IEEE Transactions on Nuclear Science. 52:2144-2152
Single ions impacting on SiO/sub 2/ layers generate tracks of defects which may result in a Radiation Induced Leakage Current (RILC). This current is usually studied as the cumulative effect of ion-induced defects in capacitors with ultra-thin oxides
Publikováno v:
IEEE Transactions on Nuclear Science. 51:2912-2916
Flash memories are the most important among modern nonvolatile memory technologies. We are showing new results on the threshold voltage shifts in Flash memory arrays after /sup 60/Co irradiation. A (relatively) high total dose, exceeding 100 krad (Si
Publikováno v:
IEEE Transactions on Device and Materials Reliability. 1:144-149
Indispensable in CMOS manufacturing, plasma treatments may result in a latent damage in gate oxides. We propose a method to detect this latent damage as a function of the area of the multifingered metal pad connected to the gate, by using an experime
Autor:
G. Cellere, A. Visconti, M. Murat, Alessandro Paccagnella, A. Akkerman, Ari Virtanen, M. Bonanomi, R. Harboe-Sorensen, J. Barak
Swift heavy ions impacting on matter lose energy through the creation of dense tracks of charges. The study of the space and time evolution of energy exchange allows understanding the single event effects behavior in advanced microelectronic devices.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::76a54409cf8c8e7b29a44b717ea792a6
http://hdl.handle.net/11577/2963301
http://hdl.handle.net/11577/2963301
Autor:
E. Bräuer-Krisch, A. Rosenfeld, M. Lerch, M. Petasecca, M. Akselrod, J. Sykora, J. Bartz, M. Ptaszkiewicz, P. Olko, A. Berg, M. Wieland, S. Doran, T. Brochard, A. Kamlowski, G. Cellere, A. Paccagnella, E. A. Siegbahn, Y. Prezado, I. Martinez-Rovira, A. Bravin, L. Dusseau, P. Berkvens, Karen K. W. Siu
Publikováno v:
6th International Conference on Medical Applications of Synchrotron Radiation-AIP Conference
6th International Conference on Medical Applications of Synchrotron Radiation-AIP Conference, 2010, Melbourne, Australia
ResearcherID
CIÊNCIAVITAE
6th International Conference on Medical Applications of Synchrotron Radiation-AIP Conference, 2010, Melbourne, Australia
ResearcherID
CIÊNCIAVITAE
Microbeam Radiation Therapy (MRT) uses highly collimated, quasi-parallel arrays of X-ray microbeams of 50-600 keV, produced by 2nd and 3rd generation synchrotron sources, such as the National Synchrotron Light Source (NSLS) in the U.S., and the Europ
NAND Flash memories are the leader among high capacity non-volatile memory technologies and are becoming attractive also for radiation harsh environments, such as space. For these applications, a careful assessment of their sensitivity to radiation i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8ae0206ee23124028a52889fac781fb4
http://hdl.handle.net/11577/2445883
http://hdl.handle.net/11577/2445883