Zobrazeno 1 - 10
of 199
pro vyhledávání: '"G. Cautero"'
Autor:
J. Correa, M. Mehrjoo, R. Battistelli, F. Lehmkühler, A. Marras, C. B. Wunderer, T. Hirono, V. Felk, F. Krivan, S. Lange, I. Shevyakov, V. Vardanyan, M. Zimmer, M. Hoesch, K. Bagschik, N. Guerrini, B. Marsh, I. Sedgwick, G. Cautero, L. Stebel, D. Giuressi, R. H. Menk, A. Greer, T. Nicholls, W. Nichols, U. Pedersen, P. Shikhaliev, N. Tartoni, H. J. Hyun, S. H. Kim, S. Y. Park, K. S. Kim, F. Orsini, F. J. Iguaz, F. Büttner, B. Pfau, E. Plönjes, K. Kharitonov, M. Ruiz-Lopez, R. Pan, S. Gang, B. Keitel, H. Graafsma
Publikováno v:
Journal of Synchrotron Radiation, Vol 30, Iss 1, Pp 242-250 (2023)
The PERCIVAL detector is a CMOS imager designed for the soft X-ray regime at photon sources. Although still in its final development phase, it has recently seen its first user experiments: ptychography at a free-electron laser, holographic imaging at
Externí odkaz:
https://doaj.org/article/c9929c5c62bc4425a6a20a37aab5c2c5
Autor:
A. Pilotto, M. Antonelli, F. Arfelli, G. Biasiol, G. Cautero, M. Cautero, M. Colja, F. Driussi, D. Esseni, R.H. Menk, C. Nichetti, F. Rosset, L. Selmi, T. Steinhartova, P. Palestri
Publikováno v:
Frontiers in Physics, Vol 10 (2022)
We report on a suite of modeling approaches for the optimization of Avalanche Photodiodes for X-rays detection. Gain and excess noise are computed efficiently using a non-local/history dependent model that has been validated against full-band Monte C
Externí odkaz:
https://doaj.org/article/5be4b55072454e00b68e307fcdfa4b9c
Akademický článek
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Autor:
J, Correa, M, Mehrjoo, R, Battistelli, F, Lehmkühler, A, Marras, C B, Wunderer, T, Hirono, V, Felk, F, Krivan, S, Lange, I, Shevyakov, V, Vardanyan, M, Zimmer, M, Hoesch, K, Bagschik, N, Guerrini, B, Marsh, I, Sedgwick, G, Cautero, L, Stebel, D, Giuressi, R H, Menk, A, Greer, T, Nicholls, W, Nichols, U, Pedersen, P, Shikhaliev, N, Tartoni, H J, Hyun, S H, Kim, S Y, Park, K S, Kim, F, Orsini, F J, Iguaz, F, Büttner, B, Pfau, E, Plönjes, K, Kharitonov, M, Ruiz-Lopez, R, Pan, S, Gang, B, Keitel, H, Graafsma
The PERCIVAL detector is a CMOS imager designed for the soft X-ray regime at photon sources. Although still in its final development phase, it has recently seen its first user experiments: ptychography at a free-electron laser, holographic imaging at
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid_dedup__::b6ea770f6b0800646af0dbb9cf3fda4d
http://www.helmholtz-berlin.de/pubbin/oai_publication?VT=1&ID=108238
http://www.helmholtz-berlin.de/pubbin/oai_publication?VT=1&ID=108238
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.
Autor:
M. Colja, M. Cautero, R.H. Menk, P. Palestri, A. Gianoncelli, M. Antonelli, G. Biasiol, S.D. Zilio, T. Steinhartova, C. Nichetti, F. Arfelli, D. De Angelis, F. Driussi, V. Bonanni, A. Pilotto, G. Gariani, S. Carrato, G. Cautero
III-V-compound semiconductors offer many advantages over silicon-based technologies traditionally used in solid-state photodetectors, especially in hard X-ray applications that require high detection efficiency and short response times. Amongst them,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::04b1086e1e4e9c026a62c1980da7d960
https://hdl.handle.net/11390/1239225
https://hdl.handle.net/11390/1239225
Autor:
S. Bassanese, L. Bosisio, G. Cautero, P. Cristaudo, S. Di Mitri, M. Ferianis, A. Gabrielli, D. Giuressi, Y. Jin, L. Lanceri, M. Marich, L. Vitale
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 1047:167801
Diamond crystals are characterised by wide band gap and high binding energy, making them suitable as solid-state particle detectors, beam-loss monitors and dosimeters in high-radiation environments, such as particle colliders. In order to use them as
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::343ca6511c93788922c580fc8f73c0b6
https://doi.org/10.1016/j.nima.2022.167801
https://doi.org/10.1016/j.nima.2022.167801
Autor:
Z. Liptak, A. Paladino, L. Santelj, J. Schueler, S. Stefkova, H. Tanigawa, N. Tsuzuki, A. Aloisio, P. Ahlburg, P. Bambade, G. Bassi, M. Barrett, J. Baudot, T.E. Browder, G. Casarosa, G. Cautero, D. Cinabro, G. Claus, D. Cuesta, F. Di Capua, S. Di Carlo, J. Flanagan, A. Frey, B.G. Fulsom, Y. Funakoshi, M. Gabriel, R. Giordano, D. Giuressi, M. Goffe, K. Hara, O. Hartbrich, M.T. Hedges, D. Heuchel, N. Iida, T. Ishibashi, K. Jaaskelainen, D. Jehanno, S. de Jong, T. Kraetzschmar, C. La Licata, L. Lanceri, P. Leitl, P.M. Lewis, C. Marinas, C. Miller, H. Moser, K.R. Nakamura, H. Nakayama, C. Niebuhr, Y. Onuki, C. Pang, B. Paschen, I. Ripp-Baudot, G. Rizzo, J.M. Roney, H. Schreeck, B. Schwenker, F. Simon, M. Specht, B. Spruck, Y. Soloviev, M. Szelezniak, S. Tanaka, S. Terui, G. Tortone, T. Tsuboyama, Y. Uematsu, S.E. Vahsen, L. Vitale, H. Windel
The high design luminosity of the SuperKEKB electron-positron collider will result in challenging levels of beam-induced backgro\ unds in the interaction region. Understanding and mitigating these backgrounds is critical to the success of the Belle~I
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::af77f39cb32b5e02aef69fe9787a1b35
Autor:
Giorgio Biasiol, Fulvia Arfelli, G. Cautero, A. Pilotto, C. Nichetti, T. Steinhartova, David Esseni, M. Antonelli, Francesco Driussi, R.H. Menk, Luca Selmi, Pierpaolo Palestri
Publikováno v:
Solid-state electronics 168 (2020). doi:10.1016/j.sse.2019.107728
info:cnr-pdr/source/autori:Pilotto, A.; Nichetti, C.; Palestri, P.; Selmi, L.; Antonelli, M.; Arfelli, F.; Biasiol, G.; Cautero, G.; Driussi, F.; Esseni, D.; Menk, R. H.; Steinhartova, T./titolo:Optimization of GaAs%2FAlGaAs staircase avalanche photodiodes accounting for both electron and hole impact ionization/doi:10.1016%2Fj.sse.2019.107728/rivista:Solid-state electronics/anno:2020/pagina_da:/pagina_a:/intervallo_pagine:/volume:168
info:cnr-pdr/source/autori:Pilotto, A.; Nichetti, C.; Palestri, P.; Selmi, L.; Antonelli, M.; Arfelli, F.; Biasiol, G.; Cautero, G.; Driussi, F.; Esseni, D.; Menk, R. H.; Steinhartova, T./titolo:Optimization of GaAs%2FAlGaAs staircase avalanche photodiodes accounting for both electron and hole impact ionization/doi:10.1016%2Fj.sse.2019.107728/rivista:Solid-state electronics/anno:2020/pagina_da:/pagina_a:/intervallo_pagine:/volume:168
A recently developed nonlocal history dependent model for electron and hole impact ionization is used to compute the gain and the excess noise factor in avalanche photodiodes featuring heterojunctions of III-V compound semiconductors while accounting
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::94b791e9eb224e4ef0594521a83538b8
https://hdl.handle.net/11380/1206544
https://hdl.handle.net/11380/1206544
Autor:
Miltcho B. Danailov, Fulvia Arfelli, Luca Selmi, C. Nichetti, Francesco Driussi, Pierpaolo Palestri, T. Steinhartova, G. Cautero, M. Antonelli, D. De Angelis, R.H. Menk, A. Pilotto, Giorgio Biasiol
Publikováno v:
Journal of instrumentation 15 (2020). doi:10.1088/1748-0221/15/02/C02013
info:cnr-pdr/source/autori:Nichetti, C.; Steinhartova, T.; Antonelli, M.; Biasiol, G.; Cautero, G.; De Angelis, D.; Pilotto, A.; Driussi, F.; Palestri, P.; Selmi, L.; Arfelli, F.; Danailov, M.; Menk, R. H./titolo:Effects of p doping on GaAs%2FAlGaAs SAM-APDs for X-rays detection/doi:10.1088%2F1748-0221%2F15%2F02%2FC02013/rivista:Journal of instrumentation/anno:2020/pagina_da:/pagina_a:/intervallo_pagine:/volume:15
info:cnr-pdr/source/autori:Nichetti, C.; Steinhartova, T.; Antonelli, M.; Biasiol, G.; Cautero, G.; De Angelis, D.; Pilotto, A.; Driussi, F.; Palestri, P.; Selmi, L.; Arfelli, F.; Danailov, M.; Menk, R. H./titolo:Effects of p doping on GaAs%2FAlGaAs SAM-APDs for X-rays detection/doi:10.1088%2F1748-0221%2F15%2F02%2FC02013/rivista:Journal of instrumentation/anno:2020/pagina_da:/pagina_a:/intervallo_pagine:/volume:15
This work focuses on avalanche photodiodes based on GaAs/AlGaAs with separated absorption and multiplication regions (SAM-APDs). The two regions are separated by a thin p-doped layer which, under the application of a reverse bias, is able to confine
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::532643016e915d8f8b7fcfb4eb52b1f7
http://www.cnr.it/prodotto/i/435663
http://www.cnr.it/prodotto/i/435663