Zobrazeno 1 - 10
of 50
pro vyhledávání: '"G. C. XING"'
Publikováno v:
Zhonghua zhong liu za zhi [Chinese journal of oncology]. 40(8)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::ac90d2df671a2833c77df6e5ffdc5fab
https://pubmed.ncbi.nlm.nih.gov/30139029
https://pubmed.ncbi.nlm.nih.gov/30139029
Autor:
G. C. Xing, Klaus J. Bachmann
Publikováno v:
Journal of Crystal Growth. 147:35-38
In this paper we report on ZnGeP2GaP double and multiple heterostructures grown by organometallic chemical vapor deposition at 580°C, using dimethylzinc, trimethylgallium, germane and phosphine as source gases. With appropriate growth conditions, mi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cd28a2be76ec44cdb004bfa23866aed4
https://doi.org/10.1016/0022-0248(94)00593-1
https://doi.org/10.1016/0022-0248(94)00593-1
Autor:
M. L. POLIGNANO, M. ALESSANDRI, D. BRAZZELLI, B. CRIVELLI, G. GHIDINI, R. ZONCA, CARICATO, Anna Paola, M. BERSANI, M. SBETTI, L. VANZETTI, G. C. XING, G. E. MINER, N. ASTICI, S. KUPPURAO AND D. LOPES
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______4034::a80f9225ee982b7498817761633e9b72
https://hdl.handle.net/11587/117525
https://hdl.handle.net/11587/117525
Autor:
B. CRIVELLI, R. ZONCA, M. L. POLIGNANO, F. CAZZANIGA, M. ALESSANDRI, M. BERSANI, M. SBETTI, L. VANZETTI, G. C. XING, G. E. MINER, N. ATICI, S. KUPPURAO AND D. LOPES, CARICATO, Anna Paola
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______4034::2857143fcbb83f3415410c912b670dea
https://hdl.handle.net/11587/117526
https://hdl.handle.net/11587/117526
Publikováno v:
ChemInform. 22
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fbe2d8bafd4d2ab476f82d35146a710f
https://doi.org/10.1002/chin.199149303
https://doi.org/10.1002/chin.199149303
Akademický článek
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Publikováno v:
Journal of The Electrochemical Society. 138:3053-3061
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cf0dc97f830773d2c4fa5ad6ac7aac18
https://doi.org/10.1149/1.2085366
https://doi.org/10.1149/1.2085366
Publikováno v:
Journal of The Electrochemical Society. 138:3062-3067
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::90e441aa16baa03a2f33ff8fc26fe84a
https://doi.org/10.1149/1.2085367
https://doi.org/10.1149/1.2085367
Publikováno v:
Journal of Crystal Growth. 113:113-119
In this paper, we report the epitaxial growth of ZnGe 1− x Si x P 2 -Ge alloys on GaP substrates by open tube OMCVD. The chemical composition of the alloys characterized by energy dispersive X-ray spectroscopy shows that alloys with x up to 0.13 ca
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::277107cad37af2c171015bea6363c01b
https://doi.org/10.1016/0022-0248(91)90015-w
https://doi.org/10.1016/0022-0248(91)90015-w
Publikováno v:
Journal of Applied Physics. 69:7853-7861
The correlation between the resistivity of TiB2 and the chemical vapor deposition parameters and subsequent annealing temperature have been studied. The films deposited from TiCl4 and B2H6 above 600 °C are found to be nearly stoichiometric TiB2 with
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aa69d75b3ecff0f86b71bc7e564054aa
https://doi.org/10.1063/1.347518
https://doi.org/10.1063/1.347518