Zobrazeno 1 - 10
of 38
pro vyhledávání: '"G. C. Farlow"'
Publikováno v:
Journal of Physics D: Applied Physics. 53:444001
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3c94b83305a774448b6091a6f41ba828
https://doi.org/10.1088/1361-6463/aba3eb
https://doi.org/10.1088/1361-6463/aba3eb
Publikováno v:
Journal of Electronic Materials. 43:863-867
We have developed instrumentation for collecting the luminescence spectrum from solid samples while they are irradiated by electrons of sufficient energy to produce point defects. This instrumentation is used to investigate the evolution of the broad
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::31c0596d320dd055dc4a15b6bc6cc33f
https://doi.org/10.1007/s11664-014-3066-9
https://doi.org/10.1007/s11664-014-3066-9
Autor:
Marius Grundmann, H. von Wenckstern, David C. Look, G. C. Farlow, Leonard J. Brillson, Klaus Magnus H Johansen, William Ruane, Kevin D. Leedy
Publikováno v:
Nanoscale. 8(14)
The spatial distribution of defect related deep band emission has been studied in zinc oxide (ZnO) nano- and microwires using depth resolved cathodoluminescence spectroscopy (DRCLS) in a hyperspectral imaging (HSI) mode within a UHV scanning electron
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2275ead5f5d6a41284ec7d3097267a66
https://pubmed.ncbi.nlm.nih.gov/26987850
https://pubmed.ncbi.nlm.nih.gov/26987850
Publikováno v:
Physica B: Condensed Matter. :604-608
We present experimental results obtained with positron annihilation spectroscopy in room-temperature electron-irradiated n-type ZnO and GaN. The cation vacancies act as important compensating centers in 2 MeV electron-irradiated samples, even though
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::283cb92fd9e0c1169801697af6f23ad3
https://doi.org/10.1016/j.physb.2007.09.032
https://doi.org/10.1016/j.physb.2007.09.032
Publikováno v:
Journal of Electronic Materials. 36:307-311
Many point-defect–related centers have been investigated in electron-irradiated 6H-SiC by deep-level transient spectroscopy (DLTS). Most of them are believed to be related to vacancies. Our DLTS studies on deep centers produced by electron-irradiat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fc819d88772dc35a6735567c61f14147
https://doi.org/10.1007/s11664-006-0031-2
https://doi.org/10.1007/s11664-006-0031-2
Publikováno v:
Physica B: Condensed Matter. :32-38
Advancements in ZnO device applications have fostered much interest in the electrical and optical activities of various defects and impurities in the material. Although it has long been known that Group III dopants, such as Al, make efficient donors,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a36bd0c4fdaf09c600e42f845e130881
https://doi.org/10.1016/j.physb.2003.09.188
https://doi.org/10.1016/j.physb.2003.09.188
Publikováno v:
Measurement Science and Technology. 15:297-302
A dc Hall-effect apparatus, based on conventional van der Pauw specimen geometry, has been developed for in situ measurements under van de Graaff electron irradiation (0.7–2.2 MeV). An associated cryostat permits ambient temperatures of 95–300 K.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::48a5d43dd7ef224d75be1b1ae80f62bc
https://doi.org/10.1088/0957-0233/15/1/043
https://doi.org/10.1088/0957-0233/15/1/043
Publikováno v:
Semiconductor Science and Technology. 19:752-754
In situ Hall-effect measurements have been carried out on vapour-phase-grown, n-type ZnO irradiated with 1.0 and 1.5 MeV electrons in the [000-1] direction. The electrical properties change very little during irradiation at temperatures as low as 130
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9c83bffefc88d09d9909d5f2825e5b60
https://doi.org/10.1088/0268-1242/19/6/016
https://doi.org/10.1088/0268-1242/19/6/016
Publikováno v:
Applied Physics Letters. 83:3525-3527
The dominant electrically active defect produced by 0.42 MeV electron irradiation in GaN is a 70 meV donor. Since only N-sublattice displacements can be produced at this energy, and since theory predicts that the N interstitial is a deep acceptor in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d3becb879e27d13c40c53b4c465d272e
https://doi.org/10.1063/1.1623009
https://doi.org/10.1063/1.1623009
Autor:
Augustinas Galeckas, K. E. Knutsen, Filip Tuomisto, A. Yu. Kuznetsov, B. G. Svensson, A. Zubiaga, G. C. Farlow
By combining results from positron annihilation and photoluminescence spectroscopy with data from Hall effect measurements, the characteristic deep level emission centered at ∼1.75 eV and exhibiting an activation energy of thermal quenching of 11.5
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5b44bb9662e84762e2becc4fee91e2c9
https://aaltodoc.aalto.fi/handle/123456789/26994
https://aaltodoc.aalto.fi/handle/123456789/26994
