Creation of a Vertical Gallium Arsenide (GaAs) Channel High Electron Mobility Transistor (HEMT) for Power Applications in Integrated Circuit (IC) Technology.

Autor: G. C., Geethanjali, G., Pavithra, Manjunath, T. C.

Publikováno v: Grenze International Journal of Engineering & Technology (GIJET); Jan2024, Vol. 10 Issue 1, Part 2, p1665-1669, 5p