Zobrazeno 1 - 10
of 197
pro vyhledávání: '"G. Brunthaler"'
Publikováno v:
Physica E: Low-dimensional Systems and Nanostructures. 34:236-239
The dipole trap model can explain many features of the metallic behavior in gated high-mobility silicon-inversion layers. We have performed numerical calculations of the resistivity in order to drop several restrictions of former analytical considera
Autor:
H. Lichtenberger, Michael Mühlberger, G. Pillwein, D. Pachinger, Friedrich Schäffler, Thomas Berer, G. Brunthaler
Publikováno v:
Physica E: Low-dimensional Systems and Nanostructures. 34:456-459
A split gate technique is used to form a lateral quantum dot in a two-dimensional electron gas of a modulation-doped silicon/silicon-germanium heterostructure. e-beam lithography was employed to produce split gates. By applying negative voltages to t
Publikováno v:
Journal of Experimental and Theoretical Physics Letters. 81:409-412
Weak field Hall resistance Rxy(T) of the 2D electron system in Si was measured over the range of temperatures 1-35 K and densities, where the diagonal resistivity exhibits a ``metallic'' behavior. The Rxy(T) dependence was found to be non-monotonic w
Publikováno v:
Scopus-Elsevier
We compare the temperature and in-plane magnetic field dependences of resistivity ρ(T, B∥ * ) of Si MOSFETs with the recent theories. In the comparison we use the effective mass m* and g*-factor determined independently. An anomalous increase of p
Autor:
A. Prinz, Gerrit E. W. Bauer, H. Kojima, E. M. Dizhur, Michael Gershenson, Nicholas P. Butch, G. Brunthaler, V. M. Pudalov
Publikováno v:
Physica E: Low-dimensional Systems and Nanostructures. 12:585-590
We developed a crossed magnetic field technique, which allowed us to probe separately the spin and orbital properties of two-dimensional (2D) electrons. Using this technique, we measured directly the spin susceptibility, the effective electron mass a
Publikováno v:
Superlattices and Microstructures. 27:301-310
A survey is presented on recent investigations of the metal-to-insulator transition in two-dimensional systems with special emphasis on n-Si–MOS structures. Experimental facts are presented and the currently open questions on the nature of this tra
Autor:
V. M. Pudalov, Gerrit E. W. Bauer, Jan Jaroszynski, E. M. Dizhur, P. Głód, Tomasz Dietl, A. Prinz, G. Brunthaler
Publikováno v:
Annalen der Physik. 8:579-584
The negative magnetoresistance due to weak localization is investigated in the two-dimensional metallic state of Si-MOS structures for high conductance values between 35 and 120 e2/h. The extracted phase coherence time is equal to the momentum relaxa
Publikováno v:
Physical Review B. 59:12983-12990
The electrical resistivity of Bi-doped ${\mathrm{Pb}}_{1\ensuremath{-}x}{\mathrm{Eu}}_{x}\mathrm{Te}$ epitaxial layers with electron concentration $n\ensuremath{\approx}2\ifmmode\times\else\texttimes\fi{}{10}^{17}{\mathrm{cm}}^{\ensuremath{-}3}$ is s
Autor:
Thomas Hörmann, G. Brunthaler
Publikováno v:
Physica E: Low-dimensional Systems and Nanostructures. 40:1235-1237
Originally the dipole trap scattering model was treated with several approximations and limitations in order to obtain an analytical solution for the temperature and density dependence of the resistivity of high-mobility Si-MOS structures. In contras
Publikováno v:
Physica E: Low-dimensional Systems and Nanostructures. 3:79-88
The metal-insulator transition has been unexpectedly discovered in Si-MOS field effect transistors and has been verified in many other semiconducting materials afterwards. The transition caused much attention as it is in apparent contradiction to the