Zobrazeno 1 - 10
of 22
pro vyhledávání: '"G. Bostrup"'
Autor:
Priyalal Wijewarnasuriya, Jeffrey M. Peterson, D. D. Lofgreen, L. A. Almeida, Daeyeon Lee, G. Bostrup, R. N. Jacobs, Y. Chen, Andrew J. Stoltz, Scott M. Johnson, L. O. Bubulac, M. Jaime-Vasquez, M. Carmody, M. Reddy, J. D. Benson, A. Yulius, G. Brill, M. F. Vilela, J. K. Markunas, S. Couture, P. J. Smith
Publikováno v:
Journal of Electronic Materials. 43:3993-3998
State-of-the-art (112)B CdZnTe substrates were examined for near-surface tellurium precipitate-related defects. The Te precipitate density was observed to be fairly uniform throughout the bulk of the wafer, including the near-surface region. After a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d349120cfa718153929edce21a396dba
https://doi.org/10.1007/s11664-014-3338-4
https://doi.org/10.1007/s11664-014-3338-4
Publikováno v:
Journal of Electronic Materials. 30:560-565
With the evolution of infrared arrays to over four million pixels, larger formats have demanded higher quality mercury cadmium telluride (MCT) wafers. Since single defects can easily degrade multiple diodes, high operability requires very homogeneous
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::735b5af799da1efd51179b9a74ce6972
https://doi.org/10.1007/bf02665835
https://doi.org/10.1007/bf02665835
Publikováno v:
Passive Sensors.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::adfc654b9adcc17701f4f9f6454363a2
https://doi.org/10.1117/12.2300238
https://doi.org/10.1117/12.2300238
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 5:3166-3170
This work reports on two significantly different methods to form junctions in Hg1−xCdxTe by ion implantation: a ‘‘displaced Hg diffusion source’’ for n‐on‐p junctions and an ‘‘implanted species diffusion source’’ for p‐on‐n
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::661b3da642ebcc25b4c193c5a75f90c8
https://doi.org/10.1116/1.574861
https://doi.org/10.1116/1.574861
Publikováno v:
Applied Physics Letters. 39:336-338
An n‐channel metal‐insulator‐semiconductor charge‐coupled device has been successfully demonstrated in p‐type epitaxial Hg0.7Cd0.3Te (λco≃5.0 μm, 77 K) grown by liquid‐phase epitaxy on CdTe substrate. A three‐bit, three‐phase devi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bd844740524d51e19b8b140e4953b0be
https://doi.org/10.1063/1.92713
https://doi.org/10.1063/1.92713
Publikováno v:
Journal of Vacuum Science and Technology. 21:244-246
The electron mobility in n‐type Hg1−xCdxTe has been studied as a function of temperature in the vicinity of zero band‐gap crossing. The temperature range covered in these experiments was 5–300 K, and the samples studied were liquid phase epit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ec37628d352d97fe25db414a410d8cfb
https://doi.org/10.1116/1.571726
https://doi.org/10.1116/1.571726
Autor:
G. Bostrup, W. E. Tennant, J. C. Robinson, J. Ratusnik, D. S. Lo, L. O. Bubulac, D. D. Edwall, J. C. Chen
Publikováno v:
Applied Physics Letters. 50:1586-1588
The first demonstrated achievement of p on n‐type activated junctions in HgCdTe material by arsenic ion implantation is reported. The junctions were formed by treating the implant as a finite diffusion source in the post‐implant anneals. The mate
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9387c72c0f3ae84a3c7b289af4bfc67a
https://doi.org/10.1063/1.97788
https://doi.org/10.1063/1.97788
Publikováno v:
MRS Proceedings. 90
Minority carrier lifetime measurements at 77K were carried out in ptype liquid phase epitaxial (LPE) Hg 1-xCdx Te/CdTe (x = 0.22) using the photoconductive decay technique. Lifetimes of 20 to 7000 ns were obtained in samples with hole concentrations,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7d12961695c1520a58b2569bc6e376e8
https://doi.org/10.1557/proc-90-287
https://doi.org/10.1557/proc-90-287
Publikováno v:
26th Aerospace Sciences Meeting.
The role of gravity-induced phenomena in bulk CdTe crystal growth is studied with emphasis placed on the negative effects of buoyancy-driven convection, container effects, and hydrostatic pressure. An earth-bound crystal growth data base utilizing NA
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::50a798b0918e59c6becaf81724637d2c
https://doi.org/10.2514/6.1988-251
https://doi.org/10.2514/6.1988-251
Publikováno v:
IEEE Transactions on Electron Devices. 28:1250-1251
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e1ffc28f903ad95bb518fe0aaa92f5e7
https://doi.org/10.1109/t-ed.1981.20578
https://doi.org/10.1109/t-ed.1981.20578