Zobrazeno 1 - 10
of 24
pro vyhledávání: '"G. Bihlmann"'
Autor:
K. Schwarz, C. Schönbein, G. Tränkle, J. Fleissner, Harald Schneider, G. Bihlmann, S. Ehret, G. Böhm
Publikováno v:
Superlattices and Microstructures. 23:1289-1295
We have investigated the influence of the final states of bound-to-continuum transitions within the conduction band of asymmetric quantum well structures on the photocurrent. This influence manifests itself by an energy-dependent oscillation of the c
Publikováno v:
Applied Physics Letters. 69:931-933
We show that the transient intersubband photocurrent in a GaAs/AlGaAs quanturn-well infrared photodetector (QWIP) consists of two dynamical components, which are associated, respectively, with the drift motion of photoexcited carriers and with the ex
Publikováno v:
Applied Physics Letters. 68:1832-1834
We report on a novel class of voltage‐tunable two‐color detectors, based on a quantum‐well intersubband photodetector (QWIP) and a p‐i‐n photodiode in a p‐i‐n‐i‐n configuration. In this approach, the two constituting detector struct
Publikováno v:
Applied Physics Letters. 68:973-975
We report on a GaAs/AlxGa1−xAs quantum well intersubband photodetector for the long wavelength infrared region, which operates at zero bias voltage. Detection without bias is achieved by using an asymmetrical barrier structure as well as modulation
Autor:
R. Poprawe, Jürgen Jandeleit, Nicolas Wiedmann, G. Weimann, Rudolf Kiefer, G. Bihlmann, M. Ikulla
Publikováno v:
LEOS 2000. 2000 IEEE Annual Meeting Conference Proceedings. 13th Annual Meeting. IEEE Lasers and Electro-Optics Society 2000 Annual Meeting (Cat. No.00CH37080).
The electrooptic characteristics, like threshold current I/sub th/ and differential quantum efficiency /spl eta//sub d/, of lnGaAs/AlGaAs quantum well lasers generally degrade with rising operating temperature. To ensure high output power and long li
Autor:
Reinhart Poprawe, Juergen Jandeleit, Rudolf Kiefer, Nicolas Wiedmann, Guenter Weimann, Michael Mikulla, G. Bihlmann
Publikováno v:
SPIE Proceedings.
InGaAs/AlGaAs large optical cavity (LOC) single quantum well (SQW) lasers emitting at 980nm were grown incorporating an AlGaAs/GaAs short-period superlattice layer next to the quantum well in order to improve the carrier confinement and thus high-tem
Publikováno v:
SPIE Proceedings.
We report on the dynamics of the transport processes which determine the photoresponse of quantum well intersubband IR detectors. Immediately after intersubband excitation, coherent transport is important. This process can be identified via interfere
We have investigated the temporal response of uncooled photovoltaic quantum well infrared photodetectors (PV QWIP) using 2 ps pulses from a free electron laser. We measured rise and fall times of 8 ps and 63 ps, respectively. We have also determined
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d4657af3452a1018f2fad98accd355a7
https://publica.fraunhofer.de/handle/publica/190455
https://publica.fraunhofer.de/handle/publica/190455
We report on the intensity dependence of the responsivity in quantum well infrared photodetectors (QWIP). A strong reduction of the responsivity is observed already at small excitation powers for a QWIP with N=4 periods. This nonlinearity is caused b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3b25bcb23e9d1b6cd74b12a175bf542f
https://publica.fraunhofer.de/handle/publica/190744
https://publica.fraunhofer.de/handle/publica/190744
Publikováno v:
Electronics Letters. 41:1011
High-efficiency tapered diode lasers with ridge-waveguide structure emitting at 976 nm have been realised. High wall-plug efficiencies of more than 57% result in output powers of more than 12 W for a single emitter with 3.5 mm resonator length. A nea