Ultra-low-energy ion-beam synthesis of nanometer-separated Si nanoparticles and Ag nanocrystals 2D layers

Autor: G. Ben Assayag, A. Haj Salem, Béatrice Pécassou, M. Carrada, Vincent Paillard

Publikováno v: Materials Research Express
Materials Research Express, 2018, 5 (3), ⟨10.1088/2053-1591/aab582⟩
Materials Research Express, IOP Publishing Ltd, 2018, 5 (3), pp.035041
Materials Research Express, IOP Publishing Ltd, 2018, 5 (3), ⟨10.1088/2053-1591/aab582⟩

International audience; 2D networks of Si and Ag nanocrystals have been fabricated in the same SiO2 matrix by Ultra-Low-Energy Ion-Beam-Synthesis. Our synthesis scheme differs from a simple sequential ion implantation and its key point is the control

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::174e30d773d7f028eb7d30b53306a8cf
https://hal.science/hal-01755333

Nanotechnology practical teaching at school and university

Autor: Helene Tap, Francois Guerin, M.L. Boy, Jérôme Launay, Jérémie Grisolia, P. Bourdeu Daguerre, Frédéric Gessinn, Marc Respaud, Christophe Vieu, S. Calvel, Reasmey P. Tan, Sébastien Lachaize, G. Ben Assayag, C. Rouhabi, C. Capello

Publikováno v: 2016 IEEE Nanotechnology Materials and Devices Conference (NMDC)
2016 IEEE Nanotechnology Materials and Devices Conference (NMDC), Oct 2016, Toulouse, France. ⟨10.1109/NMDC.2016.7777145⟩

International audience; In the last two decades, the teaching of microelectronics and nanotechnologies has become more and more challenging. First, numerous fundamental sciences converge, which implies the introduction of more and complex theoretical

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::10a77e399c7404f7436f49c5176c0cf9
https://hal.insa-toulouse.fr/hal-01982990

Oxide-nitride-oxide memory stacks formed by low-energy Si ion implantation into nitride and wet oxidation

Autor: G. Ben Assayag, Michele Perego, Panagiotis Dimitrakis, S. Schamm, Nikolay Cherkashin, Marco Fanciulli, Pascal Normand, V. Ioannou-Sougleridis, Caroline Bonafos, V. Em. Vamvakas

Publikováno v: Microelectronic Engineering
Microelectronic Engineering, Elsevier, 2007, 84 (9-10), pp.1986--1989. ⟨10.1016/j.mee.2007.04.068⟩
Microelectronic Engineering, Elsevier, 2007, 84 (9-10), pp.1986--1989. 〈10.1016/j.mee.2007.04.068〉
Microelectronic Engineering, 2007, 84 (9-10), pp.1986--1989. ⟨10.1016/j.mee.2007.04.068⟩
Microelectronic engineering 84 (2007): 1986–1989.
info:cnr-pdr/source/autori:Ioannou-Sougleridis, V; Dimitrakis, P; Vamvakas, VE; Normand, P; Bonafos, C; Schamm, S; Cherkashin, N; Ben Assayag, G; Perego, M; Fanciulli, M/titolo:Oxide-nitride-oxide memory stacks formed by low-energy Si ion implantation into nitride and wet oxidation/doi:/rivista:Microelectronic engineering/anno:2007/pagina_da:1986/pagina_a:1989/intervallo_pagine:1986–1989/volume:84

International audience; This work presents an alternative method for the formation of the top oxide in oxide-nitride-oxide structures. The method utilizes low-energy (1 keV) Si ion implantation into thin oxide-nitride stacks, followed by low temperat

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ac16bc69cca609f934822ee4e88fbd34
https://doi.org/10.1016/j.mee.2007.04.068

Synthesis of localized 2D-layers of silicon nanoparticles embedded in a SiO2layer by a stencil-masked ultra-low energy ion implantation process

Autor: M A F van den Boogaart, Jürgen Brugger, Alain Claverie, Vincent Paillard, Arnaud Arbouet, Jérémie Grisolia, C. Dumas, Laurence Ressier, G. Ben Assayag

Publikováno v: physica status solidi (a). 204:487-491

We propose an original approach called “stencil-masked ion implantation process” to perform a spatially localized synthesis of a limited number of Si nanoparticles (nps) within a thin SiO2 layer. This process consists in implanting silicon ions a

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::5c30398e77c52bc970a2c85666419d33
https://doi.org/10.1002/pssa.200673232

Electron transport through a metallic nanoparticle assembly embedded in SiO2 and SiNx by low energy ion implantation

Autor: Robert Carles, Fabrice Gourbilleau, Béatrice Pécassou, Maxime Bayle, Caroline Bonafos, Patrizio Benzo, G. Ben Assayag, Jérémie Grisolia

Publikováno v: physica status solidi (c)
physica status solidi (c), 2015, ⟨10.1002/pssc.201510147⟩
physica status solidi (c), Wiley, 2015, 〈10.1002/pssc.201510147〉
physica status solidi (c), Wiley, 2015, 12 (12), pp.1328-1332. ⟨10.1002/pssc.201510147⟩
physica status solidi (c), Wiley, 2015, ⟨10.1002/pssc.201510147⟩

International audience; Original substrates have been developed to offer a new approach to modulate and analyse simultaneously electro‐optical and transport properties through an assembly of metallic nanoparticles (NPs). Using low energy ion implan

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2445954b81ce2a8624f9088bc7c392cf
https://hal.science/hal-01241243/document