Výsledky vyhledávání - "G. Battistig"

Sensitivity tuning of A 3-axial piezoresistive force sensor

Autor: G. Battistig, Zoltán Hajnal, A. Pongrácz, M. Ádám, V. Timárné, D. Molnár

Publikováno v: Microelectronic Engineering. 90:40-43

Design and development of a Si based full membrane piezoresistive 3D force sensor is presented in this paper. Four piezoresistors are formed by ion implantation on the back side of a thin Si membrane, while on the front side a 380µm high Si mesa is

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::d93dfa4016378bc255510afa17f5d614
https://doi.org/10.1016/j.mee.2011.05.030

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Electron microscopy study of Ni induced crystallization in amorphous Si thin films

Autor: N. Frangis, J. Stoemenos, N. Vouroutzis, G. Battistig, B. Pécz, G. Z. Radnóczi, E. Dodony, A. Kovács

Publikováno v: AIP Conference Proceedings.

The crystallization of amorphous silicon is studied by transmission electron microscopy. The effect of Ni on the crystallization is studied in a wide temperature range heating thinned samples in-situ inside the microscope. Two cases of limited Ni sou

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::e92485b6db0a2b8cc4bd52458fc36d5b
https://doi.org/10.1063/1.4908579

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Backside aluminisation effects on solar cell performance

Autor: ZE Horváth, J Likonen, I Bársony, Zs Makaró, G Battistig

Publikováno v: Makaro, Z, Battistig, G, Horwath, Z, Likonen, J & Barsony, I 1998, ' Backside aluminisation effects on solar cell performance ', Vacuum, vol. 50, no. 3-4, pp. 481-485 . https://doi.org/10.1016/S0042-207X(98)00083-9

In this work the effect of the back surface field (BSF) formation by high temperature treatment of backside aluminisation was analysed in silicon solar cells. Systematic I−V and spectral response (SR) characterisation shows an obviously superior pe

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d88b2cfd810f752951efa97b7a8cd573
https://cris.vtt.fi/en/publications/9fcef496-1867-44db-a65f-f4082cebe368

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Degradation of very thin gate dielectrics for MOS structures due to through-oxide ion implantation

Autor: Fernanda Chiarello Stedile, W.H. Schulte, Isabelle Trimaille, S. Rigo, A. L’Hoir, J.-J. Ganem, Hans Werner Becker, G. Battistig, Israel Jacob Rabin Baumvol

Publikováno v: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 96:92-98

In VLSI technology it is usual to proceed the ion implantation of heavy dopan species through very thin silicon dioxide gate insulators. As a consequence of this process there is a degradation of the insulating properties of the oxide which induces a

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::f9192461484161b083f173c74c2e464b
https://doi.org/10.1016/0168-583x(94)00460-9

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IBA study of the growth mechanisms of very thin silicon oxide films: the effect of wafer cleaning

Autor: Isabelle Trimaille, W.H. Schulte, S. Rigo, I.J.R. Baumvol, F.C. Stedile, G. Battistig, J.-J. Ganem, H.W. Becker

Publikováno v: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 85:248-254

The growth mechanisms of very thin silicon oxide films formed during rapid thermal oxidation were studied using ion beam analysis and 18 O isotopic tracing methods. In this paper we report on the effects of different cleaning procedures of silicon wa

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::c31857e64e7e65174f747c1a3ab4ec78
https://doi.org/10.1016/0168-583x(94)95821-1

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High resolution low energy resonance depth profiling of18O in near surface isotopic tracing studies

Autor: F.C. Stedile, G. Battistig, S. Rigo, Isabelle Trimaille, G. Amsel, W.H. Schulte, J.-J. Ganem, H.W. Becker, I.J.R. Baumvol

Publikováno v: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 85:326-330

The exceptional depth profiling potential of the ≈ 100 eV narrow resonance in the 18 O(p, α) 15 N nuclear reaction at 151 keV is hindered by the low counting rates due to its low cross section. This drawback is in fact associated with Van de Graaf

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::d6afabfbb7d87733e9e0bc8fb55a3e27
https://doi.org/10.1016/0168-583x(94)95837-8

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Vibration characterization of a MEMS 3D force sensor

Autor: A. Pongracz, R.J. Werkhoven, H. R. Fischer, H.J. van de Wiel, G. Battistig, M. Erinc

Publikováno v: 12th International Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2011, 18-20 April, 2011, Linz, Austria

MEMS devices and sensors in automotive applications are exposed to vibrations during service life. These vibrations can have a profound effect on the accuracy and reliability of the device. In this study a 3D force sensor, to be used in an automotive

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::38484dd510e6d01730273fe75fb786e5
http://resolver.tudelft.nl/uuid:1f44d31f-253d-4fd2-88f5-c28fce7d244b

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High resolution depth profiling in near-surface regions of solids by narrow nuclear reaction resonances below 0.5 MeV with low energy spread proton beams

Autor: G. E. Mitchell, G Amsel, M. Buschmann, C Angulo, H. Ebbing, W.H. Schulte, Markus Berheide, G Battistig, Jeffrey Schweitzer, I Trimaille, C Rolfs, H.W. Becker

Publikováno v: Vacuum. 44:185-190

The application of proton-induced narrow resonances in nuclear reactions as probes for depth profiling near-surface regions of solids has been investigated at projectile energies below 400 keV. The measurements were performed at the Universitat Munst

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::a738eccadb593f354a71df64df589c57
https://doi.org/10.1016/0042-207x(93)90151-y

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Selective Growth of Nanocrystalline 3C-SiC Thin Films on Si

Autor: D. Beke, A. Pongrácz, G. Battistig, K. Josepovits, B. Pécz, Gabriel Ferro, Paul Siffert

Publikováno v: AIP Conference Proceedings.

Epitaxial formation of SiC nanocrystals has been investigated on single crystal silicon surfaces. A simple and cheap method using reactive annealing in CO has been developed and patented by our group (BME AFT and MTA MFA). By this technique epitaxial

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::09e50c0ec73d0410ce336264923ad49e
https://doi.org/10.1063/1.3518302

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