Zobrazeno 1 - 10
of 571
pro vyhledávání: '"G. Baccarani"'
Publikováno v:
IEEE Transactions on Electron Devices
IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2008, 55 (11), pp.2968-2976
HAL
IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2008, 55 (11), pp.2968-2976
HAL
Lateral size effects on surface-roughness-limited mobility in silicon-nanowire FETs are analyzed by means of a full- quantum 3-D self-consistent simulation. A statistical analysis is carried out by considering different realizations of the potential
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ab2eca49831123ed57be0ee1bcc08412
https://hal.archives-ouvertes.fr/hal-00391742
https://hal.archives-ouvertes.fr/hal-00391742
Publikováno v:
IEEE Transactions on Components, Packaging, and Manufacturing Technology: Part A. 20:182-189
In this paper, a dual-gate Flash EEPROM cell is proposed which allows the storage of two bits with only a slight increase in the cell size with respect to the single-bit case. Extensive simulations show that the basic functions of the Flash cell, nam
Publikováno v:
IEEE Transactions on Neural Networks. 7:206-213
In this work we investigate techniques for embedding domain-specific spatial invariances into highly-constrained neural networks. This information is used to drastically reduce the number of weights which have to be determined during the learning pha
Publikováno v:
IEEE Micro. 16:60-67
We designed and built an application-specific digital architecture aimed at mining fuzzy databases. The semi custom chip set is fully functional, and a 16-unit system provides a speedup of 500 times over the algorithm (in software) running on a Sun S
Publikováno v:
Microelectronics Journal. 26:287-300
Publikováno v:
[Proceedings] 1993 International Workshop on VLSI Process and Device Modeling (1993 VPAD).
Publikováno v:
Scopus-Elsevier
Publikováno v:
NUPAD IV. Workshop on Numerical Modeling of Processes and Devices for Integrated Circuits.
Publikováno v:
NUPAD IV. Workshop on Numerical Modeling of Processes and Devices for Integrated Circuits.
In this paper we study impact ionization in a BJT, by means of a newly develope'd technique based on a deterministic one-dimensional solution of the BTE. We evaluate the collector current multiplication factor and compare it with measurements in a th