Zobrazeno 1 - 10
of 125
pro vyhledávání: '"G. B. Galiev"'
Autor:
G. B. Galiev, E. A. Klimov, S. S. Pushkarev, V. V. Saraykin, I. S. Vasil’evskii, A. N. Vinichenko, M. M. Grekhov, A. N. Klochkov
Publikováno v:
Nanobiotechnology Reports. 17:S18-S23
Autor:
M. S. Folomeshkin, Yu. A. Volkovsky, P. A. Prosekov, G. B. Galiev, E. A. Klimov, A. N. Klochkov, S. S. Pushkarev, A. Yu. Seregin, Yu. V. Pisarevsky, A. E. Blagov, M. V. Kovalchuk
Publikováno v:
Crystallography Reports. 67:317-322
Publikováno v:
Semiconductors. 54:1417-1423
The results of studies of the surface morphology, electrical characteristics, and photoluminescence properties of epitaxial GaAs films grown by molecular-beam epitaxy on GaAs(110) substrates and doped with Si are reported. A series of samples is grow
Autor:
A. N. Klochkov, Alexander P. Shkurinov, P. M. Solyankin, G. B. Galiev, I. S. Vasil’evskii, E. A. Klimov, M. R. Konnikova, A. N. Vinichenko
Publikováno v:
Optics and Spectroscopy. 128:1010-1017
A material in the form of a multilayer structure based on low-temperature LT-GaAs grown on (111)A-oriented substrates is proposed for fabrication of THz photoconductive antennas. These structures contain active LT-GaAs layers and doping acceptor GaAs
Publikováno v:
Optics and Spectroscopy. 128:877-884
The electrophysical and phosphorescence characteristics, as well as the surface morphology, of GaAs films grown by molecular beam epitaxy on GaAs substrates with the (110) crystallographic orientation are studied. The silicon-doped epitaxial layers w
Autor:
A. N. Klochkov, G. B. Galiev, I. N. Trunkin, S. S. Pushkarev, I. S. Vasil’evskii, A. L. Vasiliev, A. N. Vinichenko, E. A. Klimov
Publikováno v:
Crystallography Reports. 65:496-501
The structural characteristics of {InGaAs/InAlAs} superlattices, grown by molecular-beam epitaxy (MBE) at a temperature of 200°C on InP substrates with the crystallographic orientations (100) and (111)A, have been investigated. The superlattices con
Publikováno v:
PROCEEDINGS OF INTERNATIONAL CONGRESS ON GRAPHENE, 2D MATERIALS AND APPLICATIONS (2D MATERIALS 2019).
The terahertz (THz) wave generation by photoconductive antennas fabricated on the low-temperature and high- temperature grown In0.5Ga0.5As semiconductor and Bi2-xSbxTe3-ySey (BSTS) topological insulator films is studied by the terahertz time-domain s
Autor:
Galiya Kh. Kitaeva, A. A. Leontyev, A. N. Klochkov, K. A. Kuznetsov, S. S. Pushkarev, G. B. Galiev, E. A. Klimov
Publikováno v:
Electronics, Vol 9, Iss 3, p 495 (2020)
Electronics
Volume 9
Issue 3
Electronics
Volume 9
Issue 3
The terahertz wave generation by spiral photoconductive antennas fabricated on low-temperature In0.5Ga0.5As films and In0.5Ga0.5As/In0.5Al0.5As superlattices is studied by the terahertz time-domain spectroscopy method. The structures were obtained by
Publikováno v:
Semiconductors. 52:376-382
The electrical properties and photoluminescence features of uniformly Si-doped GaAs layers grown on GaAs substrates with the (100) and (111)A crystallographic orientations of the surface are studied. The samples are grown at the same As4 pressure in
Autor:
A. N. Klochkov, G. B. Galiev, Imamov Rafik M, S. S. Pushkarev, P. P. Maltsev, I. N. Trunkin, E. A. Klimov, A. L. Vasiliev
Publikováno v:
Crystallography Reports. 62:947-954
A complex investigation of epitaxial In0.5Ga0.5As films grown on GaAs substrates with crystallographic orientations of (100) and (111)A in the standard high- and low-temperature modes has been performed. The parameters of the GaAs substrate and In0.5