Zobrazeno 1 - 10
of 85
pro vyhledávání: '"G. B. Dubrovskii"'
Autor:
G. B. Dubrovskii
Publikováno v:
Physics of the Solid State. 40:1557-1562
It is shown that layered metal dichalcogenides are quasi-one-dimensional molecular crystals and form a new class of crystal structures — molecular close packed. Since the minimum structural unit in these crystals is a monomolecular layer, using the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::021e2a1ab90b04540f7da20fad20bb5d
https://doi.org/10.1134/1.1130598
https://doi.org/10.1134/1.1130598
Autor:
G. B. Dubrovskii
Publikováno v:
Physics of the Solid State. 45:1669-1671
Possible sequences of alternating triple layers X-M-X in MX2 dichalcogenides (where M is a metal and X is a chalcogen) that are consistent with the close packing conditions are considered, and the structure and symmetry of the unit cells of the main
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::471344e5b1fbe56056fc42fc23ab4695
https://doi.org/10.1134/1.1611230
https://doi.org/10.1134/1.1611230
Autor:
Igor A. Sokolov, G. B. Dubrovskii, A. A. Petrov, Nikolaos A. Vainos, Mikhail Bryushinin, C. Kalpouzos
Publikováno v:
Physics of the Solid State. 44:1254-1256
The specific features of nonstationary photovoltage excitation in molecular crystals of tin disulfide are investigated. A substantial change in the dependence of the photocurrent amplitude on the spatial frequency of the interference pattern is revea
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a23d98d496158fbe5bdcb29be87307ae
https://doi.org/10.1134/1.1494618
https://doi.org/10.1134/1.1494618
Publikováno v:
Semiconductors. 32:734-735
Single crystals of GeS2 are grown by two methods: crystallization from a melt and chemical vapor transport. All crystals are found to have a monoclinic structure with the unit-cell parameters a=11.45 A, b=16.09 A, c=6.7 A, and β=91°. The reflection
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fd2ba1c65831cfd932417f20af25066d
https://doi.org/10.1134/1.1187494
https://doi.org/10.1134/1.1187494
Publikováno v:
Physica Status Solidi (b). 90:429-432
The shape of the fundamental absorption edge is theoretically analysed for semiconductors with one-dimensional electronic superlattice. The structure associated with minizone edges is found experimentally in the absorption spectrum of 6H-SiC crystals
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f69dc526d1b3670fe5599e39eeb2b700
https://doi.org/10.1002/pssb.2220900149
https://doi.org/10.1002/pssb.2220900149
Autor:
V. I. Belyavskii, G. B. Dubrovskii
Publikováno v:
physica status solidi (b). 103:131-137
Theoretical analysis of the selection rules and absorption line shapes is presented for inter-minizone transitions of electrons in a superlattice. Impurity absorption associated with electron transitions from the donor level is also considered. The r
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::602fbf0b8999a6f25ad3ce2fb81ebffd
https://doi.org/10.1002/pssb.2221030113
https://doi.org/10.1002/pssb.2221030113
Autor:
E. I. Radovanova, G. B. Dubrovskii
Publikováno v:
Physica Status Solidi (b). 48:875-879
The light absorption in the range 2 to 65 μm has been measured in 6H, 15R, and 27R SiC polytypes at 80 and 300 °K. It is shown that at 80 °K there is a broad absorption band in the infrared spectra of each polytype which is associated with electro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0b7a81a9f62ed076414d09b928a1905a
https://doi.org/10.1002/pssb.2220480247
https://doi.org/10.1002/pssb.2220480247
Publikováno v:
Physica Status Solidi (b). 57:423-431
Absorption of polarized light in the near IR and visible region has been measured in n-type silicon carbide crystals of seven modifications: 4H, 6H, 8H, 15R, 27R, 33R, and 21R. All the samples showed clearly resolved polarized absorption bands at wav
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::95f42c249b3052e48d95fbc5a792f830
https://doi.org/10.1002/pssb.2220570142
https://doi.org/10.1002/pssb.2220570142
Publikováno v:
Physica Status Solidi (B); Nov1978, Vol. 90 Issue 1, p429-432, 4p