Zobrazeno 1 - 10
of 144
pro vyhledávání: '"G. Auvert"'
Publikováno v:
Microelectronic Engineering. 156:78-81
Electrical characterization during focused ion beam (FIB) milling of an elementary Pt/NiO/Pt resistive memory cell is used to localize the conducting channels and to estimate the size and shape of the conducting nanofilament. A good agreement is foun
Publikováno v:
2015 IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference (IITC/MAM).
Electrical characterization during FIB milling of an elementary Pt/NiO/Pt resistive memory cell is used to localize the conducting channels and to estimate the size and shape of the nanofilament. A good agreement is found with cross sectional high re
Publikováno v:
Microelectronic Engineering. 50:277-284
Our newest method for interconnection analysis using focused ion beam (FIB) specimen thinning and energy filtering transmission electron microscopy (EFTEM) is presented. It is shown that using the site-specific capability and the controlled thinning
Autor:
S. Boughaba, G. Auvert
Publikováno v:
Journal of Applied Physics. 78:6791-6796
Micron‐size silicon lines have been deposited from the Ar+ laser‐induced pyrolytic decomposition of trisilane (Si3H8) using a direct writing technique. The substrates used were polysilicon/silicon dioxide/monosilicon multilayered structures. The
Publikováno v:
Journal of Applied Physics. 75:3635-3642
Polycrystalline Gaussian shape silicon lines as small as 1 μm in width were deposited by pyrolysis of silane (SiH4) on polysilicon/silicon‐dioxide/monosilicon substrates. As a heat source, a cw argon‐ion laser operating in the 488–514 nm range
Autor:
G. Auvert, S. Boughaba
Publikováno v:
Journal of Applied Physics. 75:138-142
Nickel tetracarbonyl [Ni(CO)4] molecules were used as a probe to investigate the coverage of a heated polycrystalline nickel surface with nitrogen adspecies. For this purpose, the deposition kinetics of nickel (Ni) microstructures from the thermal de
Autor:
Paolo Lorenzi, Eugénie Martinez, Patrice Gonon, B. De Salvo, Julien Buckley, G. Auvert, C. Guedj, R. Vignon, Jean-Paul Barnes, Névine Rochat, P. Calka, J. F. Nodin, Andrea Fantini, A. Persico, S. Favier, Vincent Jousseaume, C. Vallée, S. Minoret, A. Roule, S. Tirano, H. Grampeix, L. Perniola, H. Feldis
Publikováno v:
Solid-State Electronics
Solid-State Electronics, 2011, 58, pp.62-67
HAL
Solid-State Electronics, Elsevier, 2011, 58, pp.62-67
Solid-State Electronics, 2011, 58, pp.62-67
HAL
Solid-State Electronics, Elsevier, 2011, 58, pp.62-67
This paper presents a detailed comparative study of the switching characteristics of resistive memory devices, with NiO or HfO 2 active materials and Pt electrodes, based on identical integration schemes. Material screening and qualification are perf
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fbf61c41230becb3917e98bce2cb37bc
https://hal.science/hal-00669415
https://hal.science/hal-00669415
Autor:
G. Auvert, S. Boughaba
Publikováno v:
Journal of Applied Physics. 73:8590-8600
Polycrystalline nickel lines as small as 1 μm in width were deposited by pyrolysis of nickel tetracarbonyl [Ni(CO)4] on polysilicon/silicon dioxide/monosilicon substrates. As heat source, a cw argon‐ion laser operating at several wavelengths aroun
Autor:
G. Auvert, S. Boughaba
Publikováno v:
Applied Surface Science. 69:79-86
Nickel lines were deposited from the decomposition of Ni(CO)4 on silicon/silicon-dioxide/silicon substrates locally heated by means of a focused CW argon-ion laser operating at several wavelengths around 0.5 μm. Growth kinetics, morphology and elect
Autor:
C. Vallée, J. Buckley, H. Grampeix, S. Tirano, P. Calka, S. Minoret, R. Vignon, L. Perniola, Patrice Gonon, Névine Rochat, A. Persico, J.P. Barnes, Vincent Jousseaume, J. F. Nodin, Paolo Lorenzi, Eugénie Martinez, Andrea Fantini, S. Favier, H. Feldis, G. Auvert, B. De Salvo, A. Roule, C. Guedj
Publikováno v:
2010 IEEE International Memory Workshop.
This paper presents a detailed comparative study of the switching characteristics of resistive memory devices, with NiO or HfO 2 active materials and Pt electrodes, based on identical integration schemes. Material screening and qualification are perf