Zobrazeno 1 - 10
of 266
pro vyhledávání: '"G. Audoit"'
Autor:
Benoit Sklenard, Joris Lacord, D. Lattard, R. Nait Youcef, Xavier Garros, A. Tataridou, Francois Andrieu, Claire Fenouillet-Beranger, F. Balestra, Sylvain Barraud, Perrine Batude, G. Audoit, Mikael Casse, D. Bosch, J. Lugo, Christoforos G. Theodorou, Laurent Brunet, J.-P. Colinge, J. Cluzel, F. Allain, C. Vizioz, J.M. Hartmann
Publikováno v:
2020 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA)
2020 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA), Aug 2020, Hsinchu, Taiwan. pp.126-127, ⟨10.1109/VLSI-TSA48913.2020.9203690⟩
2020 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA), Aug 2020, Hsinchu, Taiwan. pp.126-127, ⟨10.1109/VLSI-TSA48913.2020.9203690⟩
We fabricated junction less and inversion-mode monocrystalline nanowire nMOSFETs down to L=18nm gate length and W=20nm width. We demonstrate record performance of nanowire junction less transistors for analog applications: $A_{VT}=1.4mV \cdot \mu$ m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::22aa19246805ca5305905064aa067feb
https://hal.science/hal-02969748/file/vlsi_tsa_BOSCH_HAL.pdf
https://hal.science/hal-02969748/file/vlsi_tsa_BOSCH_HAL.pdf
Autor:
Nicolas Rolland, G. Audoit, Isabelle Mouton, Davit Melkonyan, Wilfried Vandervorst, Janusz Bogdanowicz, Didier Blavette, Jean-Paul Barnes, François Vurpillot, Claudia Fleischmann, Sylvain Barraud, Adeline Grenier, Sébastien Duguay
Publikováno v:
Scripta Materialia
Scripta Materialia, Elsevier, 2018, 148, pp.91-97. ⟨10.1016/j.scriptamat.2017.05.012⟩
Scripta Materialia, 2018, 148, pp.91-97. ⟨10.1016/j.scriptamat.2017.05.012⟩
Scripta Materialia, Elsevier, 2018, 148, pp.91-97. ⟨10.1016/j.scriptamat.2017.05.012⟩
Scripta Materialia, 2018, 148, pp.91-97. ⟨10.1016/j.scriptamat.2017.05.012⟩
International audience; Atom probe tomography is unique in its ability to image in 3D at the atomic scale and measure composition in asemiconductor device with high sensitivity. However it suffers from many artefacts. The current state of the art ofn
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f16f96c54684b1fa2f2b63abd69968e2
https://doi.org/10.1016/j.scriptamat.2017.05.012
https://doi.org/10.1016/j.scriptamat.2017.05.012
Publikováno v:
Journal of Superconductivity and Novel Magnetism. 30:2261-2270
The electrical transport properties of W films obtained through focused ion beam deposition reveal a transition from weakly insulating to metallic behavior for increasing film thickness. At low temperatures, all the films make a transition to the sup
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cfbffce1b6b3fec391e7104ada6a4998
https://doi.org/10.1007/s10948-017-4028-2
https://doi.org/10.1007/s10948-017-4028-2
Autor:
A. Benoist, S. Bernasconi, G. Audoit, C. Guedj, Philippe Candelier, C. Fenouillet-Beranger, T. Dewolf, L. Perniola, E. Jalaguier, S. Jeannot, C. Charpin, Stephane Denorme, E. Vianello, M. Azzaz, Daniele Garbin, C. Cagli
Publikováno v:
Solid-State Electronics. 125:182-188
In this article, the reliability of HfO2-based RRAM devices integrated in an advanced 28 nm CMOS 16 kbit demonstrator is presented. In order to improve the memory performance, a thin Al2O3 layer is inserted in the HfO2-based memory stack (TiN/Ti/HfO2
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::69d5eccfc71c5f64a81a84ad88c54bc6
https://doi.org/10.1016/j.sse.2016.07.007
https://doi.org/10.1016/j.sse.2016.07.007
Publikováno v:
Journal of Microscopy. 264:247-251
This paper shows how X-ray computed nanotomography (CNT) can be correlated with focused ion beam time-of-flight secondary ion mass spectrometry (FIB-TOF-SIMS) tomography on the same sample to investigate both the morphological and elemental structure
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::55f797b05a5b07f8a2bd961ad50e386d
https://doi.org/10.1111/jmi.12458
https://doi.org/10.1111/jmi.12458
Autor:
Maud Vinet, Virginie Loup, Bernard Previtali, G. Audoit, Vincent Delaye, V. Lapras, Mikael Casse, Joris Lacord, Sylvain Barraud, Thomas Ernst, Nicolas Bernier, N. Rambal, Olivier Rozeau, V. Balan, L. Dourthe, Zdenek Chalupa, A. Jannaud, Sebastien Martinie, C. Vizioz, J.M. Hartmann, G. Romano
Publikováno v:
2018 IEEE International Electron Devices Meeting (IEDM).
For the first time, a comprehensive study going from the integration of 3D stacked nanosheets Gate-All-Around (GAA) MOSFET devices to SPICE modeling is proposed. Devices have been successfully fabricated on SOI substrates using a replacement high- $\
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0655b963a78cafb62cfba4ac52ba9005
https://doi.org/10.1109/iedm.2018.8614507
https://doi.org/10.1109/iedm.2018.8614507
Autor:
Olivier Pollet, G. Audoit, C. Guedj, Sébastien Barnola, Daniel Benoit, Maxime Garcia-Barros, Francois Leverd, Audrey Jannaud, Nicolas Posseme
Publikováno v:
Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures
Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures, 2018, 36 (5), pp.052201. ⟨10.1116/1.5038617⟩
Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures, American Vacuum Society (AVS), 2018, 36 (5), pp.052201. ⟨10.1116/1.5038617⟩
Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures, 2018, 36 (5), pp.052201. ⟨10.1116/1.5038617⟩
Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures, American Vacuum Society (AVS), 2018, 36 (5), pp.052201. ⟨10.1116/1.5038617⟩
International audience; Spacer etching realization is considered today as one of the most critical processes for the fully depleted silicon on insulator devices realization. The challenge arises from the fact that low-k spacer needs to be introduced
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::25bad278b7bb95f625fbfd1e6f332c7e
https://cea.hal.science/cea-02185184/document
https://cea.hal.science/cea-02185184/document
Autor:
Nicolas Bernier, Nicolas Loubet, R. Coquand, Tenko Yamashita, James Chingwei Li, O. Faynot, J. Gaudiello, Sylvain Barraud, G. Audoit, Shay Reboh, E. Augendre, Jean-Luc Rouvière, Narciso Gambacorti
Publikováno v:
Applied Physics Letters
Applied Physics Letters, American Institute of Physics, 2018, 112 (5), pp.051901. ⟨10.1063/1.5010997⟩
Applied Physics Letters, 2018, 112 (5), pp.051901. ⟨10.1063/1.5010997⟩
Applied Physics Letters, American Institute of Physics, 2018, 112 (5), pp.051901. ⟨10.1063/1.5010997⟩
Applied Physics Letters, 2018, 112 (5), pp.051901. ⟨10.1063/1.5010997⟩
Pre-strained fin-patterned Si/SiGe multilayer structures for sub-7 nm stacked gate-all-around Si-technology transistors that have been grown onto bulk-Si, virtually relaxed SiGe, strained Silicon-On-Insulator, and compressive SiGe-On-Insulator were i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6094e1c5657c5b2510154a17dead1a85
https://hal.archives-ouvertes.fr/hal-02071864
https://hal.archives-ouvertes.fr/hal-02071864
Autor:
Thierry Baron, Franck Bassani, G. Audoit, V. Gorbenko, Mickael Martin, R. Cipro, S. David, Adeline Grenier, Jean-Paul Barnes, Xinyu Bao
Publikováno v:
Microelectronic Engineering
Microelectronic Engineering, Elsevier, 2015, 147, pp.219-222. ⟨10.1016/j.mee.2015.04.107⟩
Microelectronic Engineering, 2015, 147, pp.219-222. ⟨10.1016/j.mee.2015.04.107⟩
Microelectronic Engineering, Elsevier, 2015, 147, pp.219-222. ⟨10.1016/j.mee.2015.04.107⟩
Microelectronic Engineering, 2015, 147, pp.219-222. ⟨10.1016/j.mee.2015.04.107⟩
Display Omitted Uniform III-V heterostructures selectively grown on non-planar 300mm Si substrate were studied using SIMS.SIMS protocols were developed to obtain 2D depth profiles of III-V materials in 3D architectures.3D reconstructions of individua
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::78f4c433ba8a9925b27bd0786e98c279
https://doi.org/10.1016/j.mee.2015.04.107
https://doi.org/10.1016/j.mee.2015.04.107
Autor:
Nicolas Bernier, G. Audoit, David Cooper, H. Grampeix, Sylvie Schamm-Chardon, Eric Jalaguier, Adeline Grenier, S. Bernasconi, Vincent Delaye, T. Dewolf, S. Pauliac, F. Nardelli, C. Charpin
Publikováno v:
International Symposium for Testing and Failure Analysis.
Forming and breaking a nanometer-sized conductive area are commonly accepted as the physical phenomenon involved in the switching mechanism of oxide resistive random access memories (OxRRAM). This study investigates a state-of-the-art OxRRAM device b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::396ff8603116b9eb0d0e1a1ccaed4016
https://doi.org/10.31399/asm.cp.istfa2017p0371
https://doi.org/10.31399/asm.cp.istfa2017p0371