Zobrazeno 1 - 10
of 85
pro vyhledávání: '"G. Aravindan"'
Publikováno v:
In Applied Surface Science 1 October 2017 418 Part A:207-215
Publikováno v:
Silicon. 14:9751-9762
Publikováno v:
Silicon. 14:7871-7878
Autor:
Michelle A Smith, Rowan Michael, Rolands G Aravindan, Soma Dash, Syed I Shah, Deni S Galileo, Patricia A Martin-DeLeon
Publikováno v:
Asian Journal of Andrology, Vol 17, Iss 2, Pp 261-268 (2015)
Titanium dioxide (TiO 2 ) nanoparticles (TNPs) are widely used commercially and exist in a variety of products. To determine if anatase TNPs (ATNPs) in doses smaller than previously used reach the scrotum after entry in the body at a distant location
Externí odkaz:
https://doaj.org/article/e4cd1fbd3ef745b8963ee8ddf9b25f2d
Publikováno v:
Silicon.
Publikováno v:
Silicon. 14:3049-3057
In this article, we have investigated the impact of furnace geometry on the melt flow while growing ingot of three different sizes. The heat flux within the three different hot zones is observed and the variation in heat dissipation during the growth
Autor:
S. Sugunraj, P. Karuppasamy, T. Keerthivasan, G. Aravindan, M. Avinash Kumar, M. Srinivasan, P. Ramasamy
Publikováno v:
Journal of Crystal Growth. 609:127151
Publikováno v:
Journal of Crystal Growth. 607:127130
Publikováno v:
Silicon. 13:1713-1722
We have carried out the numerical simulation for DS system for growing multi-crystalline silicon (mc-Si) ingot with different size additional insulation blocks. Thermal Stress, melt-crystal interface shape and dislocation density are the main factors
Publikováno v:
Journal of Crystal Growth. 599:126892