Zobrazeno 1 - 10
of 12
pro vyhledávání: '"G. A. Van der Leeden"'
Publikováno v:
Disordered Materials ISBN: 9781468487473
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ff085867f7976ec7ec19479cab9ae4bd
https://doi.org/10.1007/978-1-4684-8745-9_31
https://doi.org/10.1007/978-1-4684-8745-9_31
Publikováno v:
Journal of The Electrochemical Society. 125:661-665
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1efbbb65d8caf00225d7fcde85b94690
https://doi.org/10.1149/1.2131520
https://doi.org/10.1149/1.2131520
Autor:
J.I. Levatter, D. E. Rothe, R. F. Wood, G. A. van der Leeden, R. T. Young, Jagdish Narayan, W. H. Christie
Publikováno v:
IEEE Electron Device Letters. 3:280-283
An evaluation of a XeCl excimer laser for the laser processing of Si is reported. The annealing quality of ion-implantation damage, as measured by the crystalline perfection of the regrown layer and by p-n junction characteristics, is similar to that
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7b3305c5b10beb7d909c8abdffd5387b
https://doi.org/10.1109/edl.1982.25569
https://doi.org/10.1109/edl.1982.25569
Publikováno v:
Physical Review Letters. 58:2579-2581
The accomplishment of high-temperature superconductivity is of immense scientific and technological importance. Several critical transition-temperature barriers have recently been breached since the long-standing record temperature of 23.2 K for Nb3G
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::422bfb37253e3ace3d2c36f3e1b08c79
https://doi.org/10.1103/physrevlett.58.2579
https://doi.org/10.1103/physrevlett.58.2579
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 7:2794-2796
An argon standard for energy dispersive x‐ray spectroscopy (EDS) has been made by bias sputtering hydrogenated amorphous germanium (a‐Ge:H) films and determining the concentration of argon with Rutherford backscattering spectrometry. Varying conc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::826312a9fbc27ffbd157b84ae3ddc312
https://doi.org/10.1116/1.576180
https://doi.org/10.1116/1.576180
Publikováno v:
Applied Physics Letters. 43:666-668
Utilizing two recently developed beam processing techniques, i.e., gas discharge implantation and XeCl excimer laser annealing, p‐n junction silicon solar cells with total area (∼2 cm2) AM1 efficiencies as high as 16.5% have been made. These cell
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::77f09629dc4ca48bc1ee5f4f8dbb5e96
https://doi.org/10.1063/1.94439
https://doi.org/10.1063/1.94439
Autor:
J.D. Crownover, G A van der Leeden
The objective of this contract is to advance the thin film silicon solar cell technology developed at Southern Methodist University, Dallas, Texas, with a view toward achieving photovoltaic conversion efficiencies greater than 10% at a cost of $100 t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::81af675da72d839f4fac69c6fddd2acb
https://doi.org/10.2172/6152033
https://doi.org/10.2172/6152033
Autor:
R. T. Young, J. Narayan, W. H. Christie, G. A. van der Leeden, D. E. Rothe, L. J. Cheng, null Test, Carole S. Allman, Margot Smith, David Saltzberg, Test Troscher
Publikováno v:
AIP Conference Proceedings.
The advantages of pulsed excimer lasers for semiconductor processing are reviewed. Extensive comparisions of the quality of annealilng of ion‐implanted Si obtained with XeCl and ruby lasers have been made. The results indicate that irrespective of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::22756f98760896e1323136f194025ee6
https://doi.org/10.1063/1.34058
https://doi.org/10.1063/1.34058
Publikováno v:
MRS Proceedings. 4
Polycrystalline silicon films were deposited on singlecrystal silicon substrates from a SiH4 –H2 mixture at 660°C and epitaxially recrystallized with ruby laser pulses during the deposition. The surface morphology was found to depend critically on
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a07ce7b9d6fef9810beae65e20139b71
https://doi.org/10.1557/proc-4-221
https://doi.org/10.1557/proc-4-221
Autor:
Jagdish Narayan, D. E. Rothe, R. T. Young, W. H. Christie, G. A. van der Leeden, R. L. Sandstrom
Publikováno v:
MRS Proceedings. 13
The advantages of pulsed excimer lasers for semiconductor processing are reviewed. Studies of XeCl excimer laser annealing with pulses of 25 and 70 nsec duration and energy densities in the range from 0.5–3.0 J/cm2 are discussed. The annealing char
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c782ee6bcdf3058643a8a1829f9ccdff
https://doi.org/10.1557/proc-13-401
https://doi.org/10.1557/proc-13-401