Zobrazeno 1 - 10
of 19
pro vyhledávání: '"G. A. Ten Eyck"'
Autor:
Michel Pioro-Ladrière, Michael Lilly, Joel R. Wendt, Malcolm S. Carroll, Daniel R. Ward, Tammy Pluym, S. M. Carr, S. Rochette, Ronald P. Manginell, G. A. Ten Eyck, Martin Rudolph, Matthew Curry, A.-M. Roy
Publikováno v:
Applied Physics Letters
Applied Physics Letters, American Institute of Physics, 2019, 114 (8), pp.083101. ⟨10.1063/1.5091111⟩
Applied Physics Letters, American Institute of Physics, 2019, 114 (8), pp.083101. ⟨10.1063/1.5091111⟩
We introduce a silicon metal-oxide-semiconductor quantum dot architecture based on a single polysilicon gate stack. The elementary structure consists of two enhancement gates separated spatially by a gap, one gate forming a reservoir and the other a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7a9250538c2375483aec245c96ab7b85
https://hal.archives-ouvertes.fr/hal-02093384
https://hal.archives-ouvertes.fr/hal-02093384
Autor:
Malcolm S. Carroll, Daniel Perry, Edward S. Bielejec, Ronald P. Manginell, Meenakshi Singh, Jose Pacheco, Michael Lilly, Joel R. Wendt, G. A. Ten Eyck, Dwight Luhman, Tammy Pluym
We demonstrate a capability of deterministic doping at the single atom level using a combination of direct write focused ion beam and solid-state ion detectors. The focused ion beam system can position a single ion to within 35 nm of a targeted locat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::883e32f28a63f0ceeb18cc33b8cab36d
Publikováno v:
Chemical Vapor Deposition. 12:290-294
A method is presented for the atomic layer deposition (ALD) of palladium on air-exposed tantalum and silicon without the use of a plasma. Palladium can be deposited on these substrates at 80 °C using molecular hydrogen and palladium(II) hexafluoroac
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::999ed346122767dab0dba9a84860568f
https://doi.org/10.1002/cvde.200506456
https://doi.org/10.1002/cvde.200506456
Autor:
Christopher Jezewski, Toh-Ming Lu, G. A. Ten Eyck, Fu Tang, T. Karaback, Jay J. Senkevich, Deli Liu, Gwo-Ching Wang, William A. Lanford, S. Pimanpang
Publikováno v:
Chemical Vapor Deposition. 11:60-66
A method is presented for the atomic layer deposition (ALD) of palladium using remote hydrogen plasma as the reducing source and agent. Palladium was deposited on iridium, tungsten and silicon at 80 °C using a remote inductively coupled hydrogen pla
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eb1dd312dec5189e75b457fe3a805131
https://doi.org/10.1002/cvde.200306312
https://doi.org/10.1002/cvde.200306312
Autor:
Joel R. Wendt, Michael Lilly, Erik Nielsen, Michael C. Wanke, Malcolm S. Carroll, D. Bethke, G. A. Ten Eyck, Tzu-Ming Lu, John King Gamble, Richard P. Muller, Jason Dominguez, Tammy Pluym
Publikováno v:
Applied Physics Letters. 109:093102
Enhancement-mode Si/SiGe electron quantum dots have been pursued extensively by many groups for \revEdit{their} potential in quantum computing. Most of the reported dot designs utilize multiple metal-gate layers and use Si/SiGe heterostructures with
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7193750599db4ae69062bfd904878598
https://doi.org/10.1063/1.4961889
https://doi.org/10.1063/1.4961889
Autor:
Dwight Luhman, Nathaniel Bishop, Lisa A Tracy, G. A. Ten Eyck, Tammy Pluym, Joel R. Wendt, Malcolm S. Carroll, Michael Lilly, S. M. Carr
Publikováno v:
Applied Physics Letters. 108:063101
We use a cryogenic high-electron-mobility transistor circuit to amplify the current from a single electron transistor, allowing for demonstration of single shot readout of an electron spin on a single P donor in Si with 100 kHz bandwidth and a signal
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a932c8bcb6327ad69952875f7e5f2cbe
https://doi.org/10.1063/1.4941421
https://doi.org/10.1063/1.4941421
Autor:
Ronald P. Manginell, Tammy Pluym, Elias Garratt, Michael Lilly, G. A. Ten Eyck, Daniel Perry, Nathaniel Bishop, Dwight Luhman, Joel R. Wendt, Malcolm S. Carroll, Jason Dominguez, Edward S. Bielejec, Jose Pacheco, Meenakshi Singh
Publikováno v:
Applied Physics Letters. 108:062101
Deterministic control over the location and number of donors is crucial to donor spin quantum bits (qubits) in semiconductor based quantum computing. In this work, a focused ion beam is used to implant antimony donors in 100 nm × 150 nm windows stra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4c08072963423eb7c1523e10fc5ca4dd
https://doi.org/10.1063/1.4940421
https://doi.org/10.1063/1.4940421
Autor:
Robert K. Grubbs, G. A. Ten Eyck, Kevin H. Eng, C. Borras Pinilla, Michael Lilly, Kenton D. Childs, Ralph W. Young, H. L. Stalford, Jeffrey R. Stevens, Lisa A Tracy, Mark A. Eriksson, Joel R. Wendt, E. P. Nordberg, Malcolm S. Carroll
We present transport measurements of a tunable silicon metal-oxide-semiconductor double quantum dot device with lateral geometry. Experimentally extracted gate-to-dot capacitances show that the device is largely symmetric under the gate voltages appl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6654ef6a001eca1c01664923c2a9e57d
Autor:
S. Smolev, Zahyun Ku, M. B. Sinclair, Igal Brener, Lorena I. Basilio, S. R. J. Brueck, G. A. Ten-Eyck, William L. Langston
Publikováno v:
Conference on Lasers and Electro-Optics 2010.
We demonstrate a resonant coupling and hybridization between the structural resonance in the permeability of a fishnet and a material resonance in the dielectric spacer layer. Experimental data shows a good agreement with theory.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ad7edc34edc436884f74ceb36d8d2ad4
https://doi.org/10.1364/qels.2010.qwf5
https://doi.org/10.1364/qels.2010.qwf5
Autor:
Jeffery Stevens, Mark A. Eriksson, Kenton D. Childs, Joel R. Wendt, K. Eng, H. L. Stalford, Ralph W. Young, Michael Lilly, G. A. Ten Eyck, Robert K. Grubbs, Richard P. Muller, Lisa A Tracy, Malcolm S. Carroll, E. P. Nordberg
Publikováno v:
Physical Review B. 80
We present measurements of silicon (Si) metal-oxide-semiconductor (MOS) nanostructures that are fabricated using a process that facilitates essentially arbitrary gate geometries. Stable Coulomb-blockade behavior showing single-period conductance osci
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::71d3f7fd051950d6e828b78d494f3ed1
https://doi.org/10.1103/physrevb.80.115331
https://doi.org/10.1103/physrevb.80.115331