Zobrazeno 1 - 10
of 34
pro vyhledávání: '"G. A. Sukach"'
Publikováno v:
Problemy radiatsiinoi medytsyny ta radiobiolohii. 27
The scope of scientific literature was reviewed to summarize the data on the 223Radichloride therapy for castration resistant forms of prostate cancer. Key advantages of the alphaemitters over betaemitting radionuclides are highlighted in the treatme
Publikováno v:
Problemy radiatsiinoi medytsyny ta radiobiolohii. 25
Developing of algorithm for the post-surgical management of patients with iodine-negative metastasesof differentiated thyroid cancer (DTC).The DTC patients with iodine-negative metastases (n = 115) were enrolled in the study.Of them the whole body sc
ANALGESIC EFFECT OF VARIOUS RADIOPHARMACEUTICALS IN THE COMPLEX TREATMENT OF METASTATIC BONE DISEASE
Publikováno v:
Problemy radiatsiinoi medytsyny ta radiobiolohii. 26
The study objective was to investigate and compare the effectiveness of different radiopharmaceuticalsin the treatment of metastatic bone disease.Cancer patients (n = 150, average age (55 ± 11.6) years, 95 females, 55 males) having gotvarious primar
Publikováno v:
Sensor Electronics and Microsystem Technologies. 7:52-57
В настоящей работе представлен метод наблюдения полос роста кристаллов InP, легированных серой, заключающийся в электрохимическом травл
Publikováno v:
Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques. 7:626-630
Results of the experimental determination of the threshold voltage of pore formation for n-InP (100) crystals with a charge-carrier density of 2.3 × 1018 cm−3 are presented. The threshold voltage of pore formation is shown to be a function of the
Autor:
G. A. Sukach, V. V. Kidalov
Publikováno v:
Semiconductors. 45:1571-1574
It is shown that, by using a gyratron, it is possible to control the position of a p-n junction in an already fabricated light-emitting structure. A shift of the compensated region in the emitting structure based on GaAs:Si is caused by the motion of
Publikováno v:
ECS Transactions. 33:73-77
In this paper the possibility of obtaining thin InN films on porous InP substrates by radical-beam gettering epitaxy is considered. Porous InP prepared by electrochemical etching. On the surface of porous InP by Auger spectroscopy proved the formatio
Publikováno v:
Semiconductors. 45:121-124
Using scanning electron microscopy, the influence of dislocations on the mechanism of pore formation during electrolytic etching of single-crystal InP is shown. During studying of the nanostructure of porous layers, the features of mechanisms of pore
Publikováno v:
physica status solidi (a). 202:1668-1672
With the help of nitridation of porous GaAs(001) in nitrogen plasma thin films of cubic-GaN were obtained. The conclusion was made that the quality of the GaN films is dependent on the degree of porosity of the GaAs substrate. XPS spectra were used t
Autor:
G. A. Sukach, A. V. Bushma
Publikováno v:
Measurement Techniques. 48:580-586
The technique used in the investigation of the energy characteristics of scale representations of information in measurement science is analyzed. Analytic expressions are obtained for a two-cycle information model. Using these expressions, the energy