Zobrazeno 1 - 10
of 212
pro vyhledávání: '"G. A. Prinz"'
Publikováno v:
Journal of Materials in Civil Engineering. 35
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1476a6d6dff1fc84bdf73ca3553a0d5f
https://doi.org/10.1061/jmcee7.mteng-14699
https://doi.org/10.1061/jmcee7.mteng-14699
Publikováno v:
Cells
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=r3c4b2081b22::5f98d327dfbdb971fc30974e05c2078d
Autor:
A. Reiser, Raoul Schneider, Johannes Biskupek, Ute Kaiser, G. M. Prinz, Klaus Thonke, Martin Feneberg, Rolf Sauer, M. Schirra
Publikováno v:
Microelectronics Journal. 40:210-214
An emission band at 3.31eV is frequently observed in low-temperature photoluminescence (PL) measurements on ZnO p-doped with group-V elements, and also on nominally undoped ZnO layers and nanostructures. It has alternatively been ascribed to LO- or T
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3916a1734f5dafabd0afad2f014d8e0a
https://doi.org/10.1016/j.mejo.2008.07.031
https://doi.org/10.1016/j.mejo.2008.07.031
Autor:
Klaus Thonke, A. Reiser, G. M. Prinz, M. Schirra, Raoul Schneider, Ute Kaiser, Martin Feneberg, Rolf Sauer, Johannes Biskupek, Carl E. Krill
Publikováno v:
Physica B: Condensed Matter. :362-365
The 3.314 eV emission band characteristically appearing in bulk, epitaxial, and nano-structured ZnO samples is studied by photoluminescence (PL) and spatially resolved cathodoluminescence (CL) at cryogenic temperatures along with SEM and TEM. We show
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6d30474d41cb870086d721ddfa5de073
https://doi.org/10.1016/j.physb.2007.08.188
https://doi.org/10.1016/j.physb.2007.08.188
Autor:
Ferdinand Scholz, Andrey Chuvilin, C. Kirchner, G. M. Prinz, Daniel Hofstetter, Johannes Biskupek, Rolf Sauer, Klaus Thonke, Ute Kaiser, S.B. Thapa
Publikováno v:
Journal of Crystal Growth. 298:383-386
The effects on surface morphology, crystal quality, and growth rate of undoped AlN layers grown on c -plane sapphire substrates due to the changes in growth parameters, such as V–III ratio, N 2 – H 2 ratio, and growth temperature in LP-MOVPE are
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::00164c869a1ec9f6301af104087178ce
https://doi.org/10.1016/j.jcrysgro.2006.10.142
https://doi.org/10.1016/j.jcrysgro.2006.10.142
Autor:
Klaus Thonke, Rolf Sauer, S.B. Thapa, Martin Feneberg, G. M. Prinz, A. Ladenburger, Boris M. Epelbaum, Ferdinand Scholz, M. Schirra, Matthias Bickermann
Publikováno v:
Superlattices and Microstructures. 40:513-518
Strained AlN layers grown by MOVPE on sapphire and nominally unstrained AlN single crystals were studied employing photoluminescence, cathodoluminescence, and reflectance spectroscopy in the near-band edge range. The data allow one to determine funda
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1b09c8b024481e9c999a5ac9fea42f47
https://doi.org/10.1016/j.spmi.2006.10.001
https://doi.org/10.1016/j.spmi.2006.10.001
Publikováno v:
Diamond and Related Materials. 15:564-568
Two phosphorus-doped CVD diamond layers with nominal concentrations of 3 × 1018 cm− 3 and 1 × 1019 cm− 3 were studied by low-temperature cathodoluminescence. The measurements show that the effective doping concentration varies systematically ac
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b9889326a9a9b352e6922c4efe3d82f5
https://doi.org/10.1016/j.diamond.2005.11.039
https://doi.org/10.1016/j.diamond.2005.11.039
Publikováno v:
Journal of Applied Physics. 87:6668-6673
In this paper, we present the vertical magnetoresistive random access memory (VMRAM) design based on micromagnetic simulation analysis. The design utilizes the vertical giant magnetoresistive effect of the magnetic multilayer. By making the memory el
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aa2c1fcf06fd27731150ee04fa479883
https://doi.org/10.1063/1.372805
https://doi.org/10.1063/1.372805
Autor:
Klaus Thonke, Vahid Raeesi, Rolf Sauer, M. Schirra, Uwe Röder, A. Reiser, Martin Feneberg, G. M. Prinz
Publikováno v:
Microelectronics Journal. 40:306-308
High-quality, vertically aligned zinc oxide (ZnO) nano-wires were grown by the vapour-transport method on ([email protected]?0) (a-plane) sapphire substrate covered by a uniform ZnO nano-crystalline seed layer which was deposited in a preceding growt
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5fba5a5945d25f702198849866155907
https://doi.org/10.1016/j.mejo.2008.07.047
https://doi.org/10.1016/j.mejo.2008.07.047
Autor:
Martin Feneberg, Ferdinand Scholz, Rolf Sauer, Ute Kaiser, G. M. Prinz, J. Hertkorn, Robert A. R. Leute, S.B. Thapa, Johannes Biskupek, Klaus Thonke, O. Klein
Publikováno v:
Journal of Crystal Growth. 310:4939-4941
Edge-type threading dislocations (TDs) can be reduced by increasing the epilayer thickness of undoped AlN grown on c -plane sapphire substrate by low pressure MOVPE. Indium as a surfactant helps to reduce cracks in both, undoped and Si-doped AlN epil
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::976a0c8732da124edf7b89c51bd1ab7f
https://doi.org/10.1016/j.jcrysgro.2008.07.091
https://doi.org/10.1016/j.jcrysgro.2008.07.091