Zobrazeno 1 - 10
of 12
pro vyhledávání: '"G. A. Porkolab"'
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 15:616-621
A chemically assisted ion beam etching system has been developed which performs high quality, highly anisotropic etching of AlGaAs/GaAs at relatively low ion energies (200 eV). The use of three grid ion optics in a Kaufman ion source allows etching a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::339ed54a1fef3b022a8b897123ce60b2
https://doi.org/10.1116/1.580693
https://doi.org/10.1116/1.580693
Publikováno v:
Digest IEEE/Leos 1996 Summer Topical Meeting. Advanced Applications of Lasers in Materials and Processing.
Wavelength division multiplexing (WDM) is rapidly becoming a mainstream technology for high capacity optical communications. One of the critical components needed in WDM systems is a multi-wavelength laser array. The external cavity laser array confi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1c91dcf6ab191d9defe75209324d228b
https://doi.org/10.1109/leosst.1996.540696
https://doi.org/10.1109/leosst.1996.540696
Autor:
G. A. Porkolab, E. D. Wolf
Publikováno v:
Applied Physics Letters. 61:2045-2047
High quality etch masks for nanometer plasma processing can be formed from thin films of semimetallic amorphous carbon that are deposited by electron beam sublimation of graphitic carbon. These films are amorphous, hard, semimetallic, and mirror‐re
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7bdff9408012f6e856fa96296c65570f
https://doi.org/10.1063/1.108355
https://doi.org/10.1063/1.108355
Autor:
G. A. Porkolab, E. D. Wolf
Publikováno v:
Applied Physics Letters. 56:2319-2321
We report on the spatially dependent enhanced etch rate of SiO2 in a CF4 planar reactive ion etcher due to the presence of the compounds GaAs or InP, or the single elements Ti, V, Nb, Ta, Cr, Mo, W, Ni, Pd, Pt, Cu, Ag, Au, Al, Ga, In, or Ge. The etch
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::41324b5bebd7fcb9862da5b9ad7e2256
https://doi.org/10.1063/1.102930
https://doi.org/10.1063/1.102930
Autor:
G. A. Porkolab, O. King, S. Agarwala, Y. J. Chen, Seyed Ahmad Tabatabaei, F.G. Johnson, Dennis Stone, S.A. Merritt, Mario Dagenais
Publikováno v:
MRS Proceedings. 477
This paper describes in detail a surface preparation, and post-etch removal technique developed for InGaAs sidewalls. It illustrates the results demonstrating the effect of sidewall post-etch, surface preparation, and surface passivation on the perfo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6d18af73596efe755516d85b786b1711
https://doi.org/10.1557/proc-477-317
https://doi.org/10.1557/proc-477-317
Autor:
Mario Dagenais, Wenhua Lin, Haifeng Li, John Hryniewicz, Dennis Stone, Yung Jui Chen, G. A. Porkolab, Yen-Ping Ho
Publikováno v:
SPIE Proceedings.
Wavelength Division Multiplexing (WDM) has become the technology of choice for meeting the rapid increase in demand for bandwidth and capacity in telecommunication and computer networking systems. One of the key enabling technologies for WDM systems
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0e4b5c6a1cc7fda4ff056c5f020929ce
https://doi.org/10.1117/12.238930
https://doi.org/10.1117/12.238930
Autor:
Seyed Ahmad Tabatabaei, Y. J. Chen, Dennis Stone, W. T. Beard, Russell E. Frizzell, F.G. Johnson, S. Agarwala, G. A. Porkolab, Mario Dagenais, O. King
Publikováno v:
Scopus-Elsevier
Pyrolyzation of photolithographically patterned photoresist on semiconductor substrates such as silicon, gallium arsenide, and indium phosphide, results in a convex-shaped, chemically inert, temporary form that functions as a mold upon which to lift-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2e2e6625d1ee41bf1a1b56aead31f3bf
https://doi.org/10.1116/1.589585
https://doi.org/10.1116/1.589585
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 13:1984
A focused electron beam was found, in the presence of oxygen gas, to induce the etching of a plasma enhanced chemical vapor deposited amorphous hydrogenated carbon (PECVD a‐C:H) film. This reaction was used to pattern the film directly, eliminating
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::990c93064f06ef11ea7a88c5e41f9947
https://doi.org/10.1116/1.588119
https://doi.org/10.1116/1.588119
Autor:
G. A. Porkolab, E. D. Wolf
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 11:2552
A self‐aligned fabrication process is presented for making surface‐emitting high‐power AlGaAs/GaAs GRIN‐SCH‐SQW semiconductor laser sources designed to produce ≳1 W optical output at the nominal GaAs wavelength of 830 nm. The process uses
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a939ec501f1a5e00867f4501b8f91a70
https://doi.org/10.1116/1.586622
https://doi.org/10.1116/1.586622
Autor:
E. D. Wolf, G. A. Porkolab
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 10:2681
Smoothness of etched facets at all angles is a critical requirement for photonic devices in such materials as AlGaAs/GaAs which are etched at variable angles by directed ion beam/reactive gas etching systems such as chemically assisted ion beam etchi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b10025343f2368ecb54b822657175a8e
https://doi.org/10.1116/1.586025
https://doi.org/10.1116/1.586025